{"id":"https://openalex.org/W2077292929","doi":"https://doi.org/10.1016/s0026-2714(03)00176-8","title":"Anomalous gate oxide conduction on isolation edges: analysis and process optimization","display_name":"Anomalous gate oxide conduction on isolation edges: analysis and process optimization","publication_year":2003,"publication_date":"2003-07-16","ids":{"openalex":"https://openalex.org/W2077292929","doi":"https://doi.org/10.1016/s0026-2714(03)00176-8","mag":"2077292929"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00176-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00176-8","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089851681","display_name":"A. Ghetti","orcid":"https://orcid.org/0000-0002-6388-5024"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"A. Ghetti","raw_affiliation_strings":["STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010788293","display_name":"D. Brazzelli","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"D. Brazzelli","raw_affiliation_strings":["STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025558040","display_name":"A. Benvenuti","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Benvenuti","raw_affiliation_strings":["STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035694704","display_name":"G. Ghidini","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Ghidini","raw_affiliation_strings":["STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078849873","display_name":"A. R. Pavan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Pavan","raw_affiliation_strings":["STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D, via Olivetti 2, 20041 Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5089851681"],"corresponding_institution_ids":["https://openalex.org/I4210154781"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.7051,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.72502246,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"43","issue":"8","first_page":"1229","last_page":"1235"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/shallow-trench-isolation","display_name":"Shallow trench isolation","score":0.7163168787956238},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.6718037128448486},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.6308275461196899},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5355712175369263},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48223671317100525},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.4722142815589905},{"id":"https://openalex.org/keywords/rounding","display_name":"Rounding","score":0.4310798645019531},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.41283899545669556},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.41262075304985046},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.3841134011745453},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3642740845680237},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32737529277801514},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29035401344299316},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23228207230567932},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23214656114578247},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2308240830898285},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12855559587478638},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.12386339902877808},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.12281480431556702},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0981404185295105}],"concepts":[{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.7163168787956238},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6718037128448486},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.6308275461196899},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5355712175369263},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48223671317100525},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4722142815589905},{"id":"https://openalex.org/C136625980","wikidata":"https://www.wikidata.org/wiki/Q663208","display_name":"Rounding","level":2,"score":0.4310798645019531},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.41283899545669556},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.41262075304985046},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.3841134011745453},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3642740845680237},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32737529277801514},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29035401344299316},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23228207230567932},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23214656114578247},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2308240830898285},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12855559587478638},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.12386339902877808},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12281480431556702},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0981404185295105},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00176-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00176-8","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1998669303","https://openalex.org/W2111791944","https://openalex.org/W2161217037","https://openalex.org/W2169395478"],"related_works":["https://openalex.org/W2006928005","https://openalex.org/W2119814266","https://openalex.org/W2749871982","https://openalex.org/W2140756430","https://openalex.org/W2104314732","https://openalex.org/W2188624265","https://openalex.org/W1992381812","https://openalex.org/W2542775189","https://openalex.org/W2101111387","https://openalex.org/W1507517533"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}