{"id":"https://openalex.org/W2093153132","doi":"https://doi.org/10.1016/s0026-2714(03)00171-9","title":"Circuit implications of gate oxide breakdown","display_name":"Circuit implications of gate oxide breakdown","publication_year":2003,"publication_date":"2003-07-22","ids":{"openalex":"https://openalex.org/W2093153132","doi":"https://doi.org/10.1016/s0026-2714(03)00171-9","mag":"2093153132"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00171-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00171-9","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036267166","display_name":"J. H. Stathis","orcid":"https://orcid.org/0000-0001-8340-2475"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"J.H. Stathis","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5097802862","display_name":"R. Rodr\u0131 x guez","orcid":null},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]},{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["ES","US"],"is_corresponding":false,"raw_author_name":"R. Rodr\u0131&#x;guez","raw_affiliation_strings":["Department d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, 08193 Bellaterra, Spain","IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA"],"affiliations":[{"raw_affiliation_string":"Department d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, 08193 Bellaterra, Spain","institution_ids":["https://openalex.org/I123044942"]},{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077091939","display_name":"B.P. Linder","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B.P. Linder","raw_affiliation_strings":["IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, P.O. Box 218, Yorktown Heights, NY 10598, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5036267166"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":3.5253,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.92688122,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"43","issue":"8","first_page":"1193","last_page":"1197"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.7131681442260742},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6582452058792114},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5859304070472717},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5621499419212341},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5098437666893005},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.49966907501220703},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.481586217880249},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.46197640895843506},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46133434772491455},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.45795971155166626},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3802059590816498},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3239932656288147},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2810744047164917},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22737199068069458}],"concepts":[{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.7131681442260742},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6582452058792114},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5859304070472717},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5621499419212341},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5098437666893005},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.49966907501220703},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.481586217880249},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.46197640895843506},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46133434772491455},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45795971155166626},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3802059590816498},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3239932656288147},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2810744047164917},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22737199068069458},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00171-9","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00171-9","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8100000023841858,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321764","display_name":"Ministerio de Educaci\u00f3n, Cultura y Deporte","ror":"https://ror.org/03nc27g21"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1526538097","https://openalex.org/W1536351615","https://openalex.org/W1948260943","https://openalex.org/W1973039798","https://openalex.org/W2002612140","https://openalex.org/W2003581145","https://openalex.org/W2034145452","https://openalex.org/W2099474450","https://openalex.org/W2119870158","https://openalex.org/W2124085954","https://openalex.org/W2149274890","https://openalex.org/W2157732684","https://openalex.org/W2168101540","https://openalex.org/W2169468042","https://openalex.org/W2532934857"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W98453623","https://openalex.org/W2340624421","https://openalex.org/W1863251870","https://openalex.org/W2101354357","https://openalex.org/W2545120047","https://openalex.org/W2159313014","https://openalex.org/W2124923340","https://openalex.org/W1509811800"],"abstract_inverted_index":null,"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}