{"id":"https://openalex.org/W2014248132","doi":"https://doi.org/10.1016/s0026-2714(03)00169-0","title":"Critical reliability challenges in scaling SiO2-based dielectric to its limit","display_name":"Critical reliability challenges in scaling SiO2-based dielectric to its limit","publication_year":2003,"publication_date":"2003-08-01","ids":{"openalex":"https://openalex.org/W2014248132","doi":"https://doi.org/10.1016/s0026-2714(03)00169-0","mag":"2014248132"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00169-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00169-0","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012609593","display_name":"Ernest Y. Wu","orcid":"https://orcid.org/0000-0003-4979-1029"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"E.Y. Wu","raw_affiliation_strings":["IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059665104","display_name":"J. Su\u00f1\u00e9","orcid":"https://orcid.org/0000-0003-0108-4907"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. Su\u00f1\u00e9","raw_affiliation_strings":["Departament d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]"],"affiliations":[{"raw_affiliation_string":"Departament d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I123044942"]},{"raw_affiliation_string":"[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]","institution_ids":["https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002302744","display_name":"W. Lai","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Lai","raw_affiliation_strings":["IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110481670","display_name":"A. Vayshenker","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Vayshenker","raw_affiliation_strings":["IBM Microelectronics Division, Hopewell Junction, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078572020","display_name":"E. Nowak","orcid":"https://orcid.org/0009-0006-5217-8005"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Nowak","raw_affiliation_strings":["IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109095929","display_name":"D. Harmon","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Harmon","raw_affiliation_strings":["IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, MS 967A 1000 River Road, Essex Junction, VT 05452, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5012609593"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":4.5829,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.94660865,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":"43","issue":"8","first_page":"1175","last_page":"1184"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.8035789132118225},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.7534865140914917},{"id":"https://openalex.org/keywords/silicon-dioxide","display_name":"Silicon dioxide","score":0.75319904088974},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7391619682312012},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.7223770618438721},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.711681604385376},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6913628578186035},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5969963073730469},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5804488658905029},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5560393929481506},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5446614027023315},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5162632465362549},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4901505410671234},{"id":"https://openalex.org/keywords/limit","display_name":"Limit (mathematics)","score":0.48889246582984924},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.48673582077026367},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.47933778166770935},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.4653409719467163},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.44383111596107483},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3218737244606018},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3166635036468506},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21343815326690674},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13408887386322021},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11468309164047241},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09656575322151184},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.08779206871986389},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0659458339214325}],"concepts":[{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.8035789132118225},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.7534865140914917},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.75319904088974},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7391619682312012},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.7223770618438721},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.711681604385376},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6913628578186035},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5969963073730469},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5804488658905029},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5560393929481506},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5446614027023315},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5162632465362549},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4901505410671234},{"id":"https://openalex.org/C151201525","wikidata":"https://www.wikidata.org/wiki/Q177239","display_name":"Limit (mathematics)","level":2,"score":0.48889246582984924},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.48673582077026367},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.47933778166770935},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.4653409719467163},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.44383111596107483},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3218737244606018},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3166635036468506},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21343815326690674},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13408887386322021},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11468309164047241},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09656575322151184},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08779206871986389},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0659458339214325},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00169-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00169-0","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1487069997","https://openalex.org/W1973313030","https://openalex.org/W1980976383","https://openalex.org/W1993049541","https://openalex.org/W1995270869","https://openalex.org/W2007792906","https://openalex.org/W2011589247","https://openalex.org/W2017694301","https://openalex.org/W2020454252","https://openalex.org/W2021750186","https://openalex.org/W2032069904","https://openalex.org/W2056601926","https://openalex.org/W2065727956","https://openalex.org/W2075697254","https://openalex.org/W2077221903","https://openalex.org/W2080074668","https://openalex.org/W2091638764","https://openalex.org/W2098550459","https://openalex.org/W2103322393","https://openalex.org/W2104139718","https://openalex.org/W2113343033","https://openalex.org/W2134931972","https://openalex.org/W2153470335"],"related_works":["https://openalex.org/W2539595190","https://openalex.org/W2099624314","https://openalex.org/W4220813443","https://openalex.org/W3107547302","https://openalex.org/W803248027","https://openalex.org/W2392567938","https://openalex.org/W3160961382","https://openalex.org/W2064172671","https://openalex.org/W2546473172","https://openalex.org/W2065583541"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}