{"id":"https://openalex.org/W2103943483","doi":"https://doi.org/10.1016/s0026-2714(03)00068-4","title":"Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE","display_name":"Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE","publication_year":2003,"publication_date":"2003-04-23","ids":{"openalex":"https://openalex.org/W2103943483","doi":"https://doi.org/10.1016/s0026-2714(03)00068-4","mag":"2103943483"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00068-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00068-4","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063461797","display_name":"Frank Brunner","orcid":"https://orcid.org/0000-0002-9196-6358"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"F. Brunner","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009364453","display_name":"Anika Braun","orcid":"https://orcid.org/0000-0002-3713-4075"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Braun","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088868847","display_name":"P. Kurpas","orcid":null},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Kurpas","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047727870","display_name":"J. Schneider","orcid":null},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Schneider","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086097177","display_name":"Joachim W\u00fcrfl","orcid":null},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. W\u00fcrfl","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025923344","display_name":"M. Weyers","orcid":"https://orcid.org/0000-0001-7431-4166"},"institutions":[{"id":"https://openalex.org/I2799749373","display_name":"Ferdinand-Braun-Institut","ror":"https://ror.org/02be22443","country_code":"DE","type":"facility","lineage":["https://openalex.org/I2799749373","https://openalex.org/I315704651"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Weyers","raw_affiliation_strings":["Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany"],"affiliations":[{"raw_affiliation_string":"Ferdinand-Braun-Institut f\u00fcr H\u00f6chstfrequenztechnik, Albert-Einstein-Strassae 11, 12489 Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]},{"raw_affiliation_string":"Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany","institution_ids":["https://openalex.org/I2799749373"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5063461797"],"corresponding_institution_ids":["https://openalex.org/I2799749373"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.2553,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.58724099,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"43","issue":"6","first_page":"839","last_page":"844"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.8777973055839539},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6643650531768799},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.604804515838623},{"id":"https://openalex.org/keywords/dopant","display_name":"Dopant","score":0.5803425312042236},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5667769312858582},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.5530272722244263},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.5313735008239746},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.5226112008094788},{"id":"https://openalex.org/keywords/hydrogen","display_name":"Hydrogen","score":0.5120880603790283},{"id":"https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy","display_name":"Metalorganic vapour phase epitaxy","score":0.4827994108200073},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.4566596448421478},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.33036214113235474},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2727997601032257},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.26778537034988403},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.20267334580421448},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17570456862449646},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0486602783203125}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.8777973055839539},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6643650531768799},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.604804515838623},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.5803425312042236},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5667769312858582},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.5530272722244263},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5313735008239746},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.5226112008094788},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.5120880603790283},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.4827994108200073},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.4566596448421478},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.33036214113235474},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2727997601032257},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.26778537034988403},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.20267334580421448},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17570456862449646},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0486602783203125},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00068-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00068-4","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W185786999","https://openalex.org/W614563996","https://openalex.org/W1563008970","https://openalex.org/W1992457019","https://openalex.org/W1992667851","https://openalex.org/W1993081491","https://openalex.org/W1998031136","https://openalex.org/W2015952448","https://openalex.org/W2026496551","https://openalex.org/W2071031305","https://openalex.org/W2075851364","https://openalex.org/W2086839478","https://openalex.org/W2088612664","https://openalex.org/W2112426018","https://openalex.org/W2140161973","https://openalex.org/W2157511793","https://openalex.org/W2158215998","https://openalex.org/W2163867628","https://openalex.org/W2165618565","https://openalex.org/W2224044523","https://openalex.org/W6688970588"],"related_works":["https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2326159057","https://openalex.org/W1965743066","https://openalex.org/W2187030298","https://openalex.org/W1775950155","https://openalex.org/W2169168432"],"abstract_inverted_index":null,"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-01-15T23:16:33.117629","created_date":"2025-10-10T00:00:00"}