{"id":"https://openalex.org/W2020369399","doi":"https://doi.org/10.1016/s0026-2714(02)00325-6","title":"Strength of Ta\u2013Si interfaces by molecular dynamics","display_name":"Strength of Ta\u2013Si interfaces by molecular dynamics","publication_year":2003,"publication_date":"2003-04-01","ids":{"openalex":"https://openalex.org/W2020369399","doi":"https://doi.org/10.1016/s0026-2714(02)00325-6","mag":"2020369399"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(02)00325-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00325-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073507343","display_name":"Pekka Heino","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133110","display_name":"Tampere University","ror":null,"country_code":"FI","type":null,"lineage":["https://openalex.org/I4210133110"]}],"countries":["FI"],"is_corresponding":true,"raw_author_name":"P. Heino","raw_affiliation_strings":["Institute of Electronics, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland","Institute of Electronics, Tampere University of Technology P.O. Box 692, FIN-33101, Tampere, Finland"],"affiliations":[{"raw_affiliation_string":"Institute of Electronics, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland","institution_ids":["https://openalex.org/I4210133110"]},{"raw_affiliation_string":"Institute of Electronics, Tampere University of Technology P.O. Box 692, FIN-33101, Tampere, Finland","institution_ids":["https://openalex.org/I4210133110"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086623002","display_name":"E. Ristolainen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133110","display_name":"Tampere University","ror":null,"country_code":"FI","type":null,"lineage":["https://openalex.org/I4210133110"]}],"countries":["FI"],"is_corresponding":false,"raw_author_name":"E. Ristolainen","raw_affiliation_strings":["Institute of Electronics, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland","Institute of Electronics, Tampere University of Technology P.O. Box 692, FIN-33101, Tampere, Finland"],"affiliations":[{"raw_affiliation_string":"Institute of Electronics, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland","institution_ids":["https://openalex.org/I4210133110"]},{"raw_affiliation_string":"Institute of Electronics, Tampere University of Technology P.O. Box 692, FIN-33101, Tampere, Finland","institution_ids":["https://openalex.org/I4210133110"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5073507343"],"corresponding_institution_ids":["https://openalex.org/I4210133110"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.1136519,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"43","issue":"4","first_page":"645","last_page":"650"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.8231030106544495},{"id":"https://openalex.org/keywords/tantalum","display_name":"Tantalum","score":0.7712842226028442},{"id":"https://openalex.org/keywords/miniaturization","display_name":"Miniaturization","score":0.7536947727203369},{"id":"https://openalex.org/keywords/copper","display_name":"Copper","score":0.6321200132369995},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6311297416687012},{"id":"https://openalex.org/keywords/molecular-dynamics","display_name":"Molecular dynamics","score":0.6284193992614746},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5640867352485657},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.4960194528102875},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.48388394713401794},{"id":"https://openalex.org/keywords/electrical-resistivity-and-conductivity","display_name":"Electrical resistivity and conductivity","score":0.46540433168411255},{"id":"https://openalex.org/keywords/diffusion-barrier","display_name":"Diffusion barrier","score":0.46492958068847656},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.4394640028476715},{"id":"https://openalex.org/keywords/activation-energy","display_name":"Activation energy","score":0.4213767349720001},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3875957131385803},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37358832359313965},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.34172430634498596},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2636212706565857},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.25309062004089355},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19091588258743286},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1417728066444397},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.0851040780544281},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.07148200273513794}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.8231030106544495},{"id":"https://openalex.org/C514619126","wikidata":"https://www.wikidata.org/wiki/Q1123","display_name":"Tantalum","level":2,"score":0.7712842226028442},{"id":"https://openalex.org/C57528182","wikidata":"https://www.wikidata.org/wiki/Q1271842","display_name":"Miniaturization","level":2,"score":0.7536947727203369},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.6321200132369995},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6311297416687012},{"id":"https://openalex.org/C59593255","wikidata":"https://www.wikidata.org/wiki/Q901663","display_name":"Molecular dynamics","level":2,"score":0.6284193992614746},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5640867352485657},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.4960194528102875},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.48388394713401794},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.46540433168411255},{"id":"https://openalex.org/C2778836790","wikidata":"https://www.wikidata.org/wiki/Q5275435","display_name":"Diffusion barrier","level":3,"score":0.46492958068847656},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.4394640028476715},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.4213767349720001},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3875957131385803},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37358832359313965},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34172430634498596},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2636212706565857},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.25309062004089355},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19091588258743286},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1417728066444397},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0851040780544281},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.07148200273513794},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(02)00325-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00325-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321108","display_name":"Academy of Finland","ror":"https://ror.org/05k73zm37"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W628210257","https://openalex.org/W1958232380","https://openalex.org/W1977399987","https://openalex.org/W1983406786","https://openalex.org/W1995171848","https://openalex.org/W1996179512","https://openalex.org/W1997348162","https://openalex.org/W2003731566","https://openalex.org/W2007551590","https://openalex.org/W2013967770","https://openalex.org/W2024312844","https://openalex.org/W2036034530","https://openalex.org/W2040817038","https://openalex.org/W2041902442","https://openalex.org/W2043041233","https://openalex.org/W2043348659","https://openalex.org/W2046001409","https://openalex.org/W2047020565","https://openalex.org/W2058352527","https://openalex.org/W2078069295","https://openalex.org/W2131464478","https://openalex.org/W2155425312","https://openalex.org/W4234347480","https://openalex.org/W4241675710"],"related_works":["https://openalex.org/W2004615523","https://openalex.org/W2055638565","https://openalex.org/W2138118262","https://openalex.org/W2542708587","https://openalex.org/W4229007131","https://openalex.org/W2364197307","https://openalex.org/W4381800218","https://openalex.org/W2034853009","https://openalex.org/W2136403807","https://openalex.org/W796810817"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2014,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}