{"id":"https://openalex.org/W2075415379","doi":"https://doi.org/10.1016/s0026-2714(02)00284-6","title":"Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation","display_name":"Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation","publication_year":2003,"publication_date":"2003-01-01","ids":{"openalex":"https://openalex.org/W2075415379","doi":"https://doi.org/10.1016/s0026-2714(02)00284-6","mag":"2075415379"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(02)00284-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00284-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024596281","display_name":"David C.T. Or","orcid":null},"institutions":[{"id":"https://openalex.org/I889458895","display_name":"University of Hong Kong","ror":"https://ror.org/02zhqgq86","country_code":"HK","type":"education","lineage":["https://openalex.org/I889458895"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"David C.T. Or","raw_affiliation_strings":["Department of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong","institution_ids":["https://openalex.org/I889458895"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016246444","display_name":"P. T. Lai","orcid":"https://orcid.org/0000-0002-6679-0055"},"institutions":[{"id":"https://openalex.org/I889458895","display_name":"University of Hong Kong","ror":"https://ror.org/02zhqgq86","country_code":"HK","type":"education","lineage":["https://openalex.org/I889458895"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"P.T. Lai","raw_affiliation_strings":["Department of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong","institution_ids":["https://openalex.org/I889458895"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023060286","display_name":"J.K.O. Sin","orcid":null},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]},{"id":"https://openalex.org/I889458895","display_name":"University of Hong Kong","ror":"https://ror.org/02zhqgq86","country_code":"HK","type":"education","lineage":["https://openalex.org/I889458895"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"J.K.O. Sin","raw_affiliation_strings":["Department of Electrical & Electronic Engineering Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical & Electronic Engineering Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong","institution_ids":["https://openalex.org/I200769079","https://openalex.org/I889458895"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044313548","display_name":"P.C.K. Kwok","orcid":"https://orcid.org/0009-0004-1752-7156"},"institutions":[{"id":"https://openalex.org/I8679417","display_name":"Hong Kong Metropolitan University","ror":"https://ror.org/0349bsm71","country_code":"HK","type":"education","lineage":["https://openalex.org/I8679417"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"P.C.K. Kwok","raw_affiliation_strings":["School of Science and Technology, Open University of Hong Kong, Homantin, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Science and Technology, Open University of Hong Kong, Homantin, Hong Kong","institution_ids":["https://openalex.org/I8679417"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044914665","display_name":"Jing-Ping Xu","orcid":"https://orcid.org/0000-0001-6959-7034"},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"J.P. Xu","raw_affiliation_strings":["Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China","institution_ids":["https://openalex.org/I47720641"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.7085,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.72658023,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"43","issue":"1","first_page":"163","last_page":"166"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9869999885559082,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9840999841690063,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nitriding","display_name":"Nitriding","score":0.7629087567329407},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.753534197807312},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6906558871269226},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6446988582611084},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6272303462028503},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.612652599811554},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5754498243331909},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5376101732254028},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5272594690322876},{"id":"https://openalex.org/keywords/plasma-display","display_name":"Plasma display","score":0.5061866641044617},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.49015769362449646},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.44674456119537354},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.43556129932403564},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34989580512046814},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.32665562629699707},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.2488597333431244},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.22762960195541382},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.17109578847885132},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1685452163219452},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.12015378475189209},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06359457969665527},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.06203773617744446}],"concepts":[{"id":"https://openalex.org/C13862629","wikidata":"https://www.wikidata.org/wiki/Q720899","display_name":"Nitriding","level":3,"score":0.7629087567329407},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.753534197807312},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6906558871269226},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6446988582611084},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6272303462028503},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.612652599811554},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5754498243331909},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5376101732254028},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5272594690322876},{"id":"https://openalex.org/C197489587","wikidata":"https://www.wikidata.org/wiki/Q185146","display_name":"Plasma display","level":3,"score":0.5061866641044617},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.49015769362449646},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.44674456119537354},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43556129932403564},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34989580512046814},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32665562629699707},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2488597333431244},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.22762960195541382},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.17109578847885132},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1685452163219452},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12015378475189209},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06359457969665527},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.06203773617744446},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1016/s0026-2714(02)00284-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00284-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},{"id":"pmh:oai:hub.hku.hk:10722/155180","is_oa":false,"landing_page_url":"http://hdl.handle.net/10722/155180","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-14957","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-14957","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.75,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1659914018","https://openalex.org/W1992981913","https://openalex.org/W2086103622","https://openalex.org/W2097426204","https://openalex.org/W2134593771","https://openalex.org/W2136502253","https://openalex.org/W2153385275","https://openalex.org/W2153949062","https://openalex.org/W2158249188","https://openalex.org/W2165583202","https://openalex.org/W2499844158","https://openalex.org/W2538120044","https://openalex.org/W4285719527","https://openalex.org/W6721546938","https://openalex.org/W6728719679"],"related_works":["https://openalex.org/W2084196976","https://openalex.org/W2074099177","https://openalex.org/W1538086813","https://openalex.org/W2020270409","https://openalex.org/W2796938634","https://openalex.org/W2740593263","https://openalex.org/W2539595190","https://openalex.org/W4220813443","https://openalex.org/W1985621513","https://openalex.org/W1484298423"],"abstract_inverted_index":null,"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}