{"id":"https://openalex.org/W2074184366","doi":"https://doi.org/10.1016/s0026-2714(02)00009-4","title":"Modeling of the I\u2013V characteristics of high-field stressed MOS structures using a Fowler\u2013Nordheim-type tunneling expression","display_name":"Modeling of the I\u2013V characteristics of high-field stressed MOS structures using a Fowler\u2013Nordheim-type tunneling expression","publication_year":2002,"publication_date":"2002-06-01","ids":{"openalex":"https://openalex.org/W2074184366","doi":"https://doi.org/10.1016/s0026-2714(02)00009-4","mag":"2074184366"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(02)00009-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00009-4","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041660505","display_name":"E. Miranda","orcid":"https://orcid.org/0000-0003-0470-5318"},"institutions":[{"id":"https://openalex.org/I24354313","display_name":"Universidad de Buenos Aires","ror":"https://ror.org/0081fs513","country_code":"AR","type":"education","lineage":["https://openalex.org/I24354313"]}],"countries":["AR"],"is_corresponding":true,"raw_author_name":"E. Miranda","raw_affiliation_strings":["Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina","institution_ids":["https://openalex.org/I24354313"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077205333","display_name":"G. Redin","orcid":null},"institutions":[{"id":"https://openalex.org/I24354313","display_name":"Universidad de Buenos Aires","ror":"https://ror.org/0081fs513","country_code":"AR","type":"education","lineage":["https://openalex.org/I24354313"]}],"countries":["AR"],"is_corresponding":false,"raw_author_name":"G. Redin","raw_affiliation_strings":["Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina","institution_ids":["https://openalex.org/I24354313"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081494455","display_name":"A. Faig\u00f3n","orcid":"https://orcid.org/0000-0002-9636-1550"},"institutions":[{"id":"https://openalex.org/I24354313","display_name":"Universidad de Buenos Aires","ror":"https://ror.org/0081fs513","country_code":"AR","type":"education","lineage":["https://openalex.org/I24354313"]}],"countries":["AR"],"is_corresponding":false,"raw_author_name":"A. Faig\u00f3n","raw_affiliation_strings":["Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratorio de F\u0131\u0301sica de Dispositivos-Microelectr\u00f3nica, Facultad de Ingenier\u0131\u0301a, Universidad de Buenos Aires, Paseo Col\u00f3n 850, 1063 Buenos Aires, Argentina","institution_ids":["https://openalex.org/I24354313"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5041660505"],"corresponding_institution_ids":["https://openalex.org/I24354313"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":1.3461,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.81815057,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"42","issue":"6","first_page":"935","last_page":"941"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.7530918121337891},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.6015992760658264},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.5412276983261108},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5411829352378845},{"id":"https://openalex.org/keywords/field-electron-emission","display_name":"Field electron emission","score":0.5249885320663452},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.49840474128723145},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4865986108779907},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.4630361497402191},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4363609552383423},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4285238981246948},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3276534080505371},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2949000597000122},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.26900142431259155},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07946574687957764},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.066242516040802}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7530918121337891},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.6015992760658264},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5412276983261108},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5411829352378845},{"id":"https://openalex.org/C121029787","wikidata":"https://www.wikidata.org/wiki/Q902877","display_name":"Field electron emission","level":3,"score":0.5249885320663452},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.49840474128723145},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4865986108779907},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4630361497402191},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4363609552383423},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4285238981246948},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3276534080505371},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2949000597000122},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26900142431259155},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07946574687957764},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.066242516040802},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(02)00009-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00009-4","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.800000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320335478","display_name":"Secretar\u00eda de Ciencia y T\u00e9cnica, Universidad de Buenos Aires","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1963561046","https://openalex.org/W1965111266","https://openalex.org/W1978450425","https://openalex.org/W1979532801","https://openalex.org/W1980584607","https://openalex.org/W1984557443","https://openalex.org/W1993049541","https://openalex.org/W2016076845","https://openalex.org/W2020498682","https://openalex.org/W2022495655","https://openalex.org/W2027755073","https://openalex.org/W2027991947","https://openalex.org/W2035445194","https://openalex.org/W2038639355","https://openalex.org/W2050680419","https://openalex.org/W2068984538","https://openalex.org/W2081048183","https://openalex.org/W2086921144","https://openalex.org/W2093998167","https://openalex.org/W2097327696","https://openalex.org/W2134926594","https://openalex.org/W2156427747","https://openalex.org/W2157050789","https://openalex.org/W2161606023","https://openalex.org/W2798314373","https://openalex.org/W4238413258"],"related_works":["https://openalex.org/W2064440194","https://openalex.org/W1995707634","https://openalex.org/W2740243652","https://openalex.org/W2394289659","https://openalex.org/W4296916267","https://openalex.org/W3182877397","https://openalex.org/W3089234692","https://openalex.org/W2051069894","https://openalex.org/W1987656551","https://openalex.org/W188510070"],"abstract_inverted_index":null,"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}