{"id":"https://openalex.org/W2081951671","doi":"https://doi.org/10.1016/s0026-2714(02)00005-7","title":"Defects in silicon oxynitride gate dielectric films","display_name":"Defects in silicon oxynitride gate dielectric films","publication_year":2002,"publication_date":"2002-04-01","ids":{"openalex":"https://openalex.org/W2081951671","doi":"https://doi.org/10.1016/s0026-2714(02)00005-7","mag":"2081951671"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(02)00005-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00005-7","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065265137","display_name":"Hei Wong","orcid":"https://orcid.org/0000-0002-8646-656X"},"institutions":[{"id":"https://openalex.org/I168719708","display_name":"City University of Hong Kong","ror":"https://ror.org/03q8dnn23","country_code":"HK","type":"education","lineage":["https://openalex.org/I168719708"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Hei Wong","raw_affiliation_strings":["Department of Electronic Engineering, City University of Hong Kong, City U, 83 Tat Chee Avenue, Kowloon, Hong Kong"],"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, City University of Hong Kong, City U, 83 Tat Chee Avenue, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I168719708"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032682324","display_name":"V. A. Gritsenko","orcid":"https://orcid.org/0000-0003-1646-0848"},"institutions":[{"id":"https://openalex.org/I4210138567","display_name":"Institute of Semiconductor Physics","ror":"https://ror.org/03napcw37","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I4210138567"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V.A. Gritsenko","raw_affiliation_strings":["Institute of Semiconductor Physics, Novosibirsk 630090, Russia"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Physics, Novosibirsk 630090, Russia","institution_ids":["https://openalex.org/I4210138567"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5065265137"],"corresponding_institution_ids":["https://openalex.org/I168719708"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":8.9043,"has_fulltext":false,"cited_by_count":88,"citation_normalized_percentile":{"value":0.98386717,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"42","issue":"4-5","first_page":"597","last_page":"605"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7980727553367615},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7071490287780762},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6996814012527466},{"id":"https://openalex.org/keywords/silicon-oxynitride","display_name":"Silicon oxynitride","score":0.6701112985610962},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5259219408035278},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5235761404037476},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5177614092826843},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.49592456221580505},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.46077460050582886},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.43711334466934204},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4241522550582886},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4148581027984619},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.39159882068634033},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3279165029525757},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24736353754997253},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19164985418319702},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07457098364830017},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07156625390052795}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7980727553367615},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7071490287780762},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6996814012527466},{"id":"https://openalex.org/C2779476251","wikidata":"https://www.wikidata.org/wiki/Q7515030","display_name":"Silicon oxynitride","level":4,"score":0.6701112985610962},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5259219408035278},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5235761404037476},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5177614092826843},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.49592456221580505},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.46077460050582886},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43711334466934204},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4241522550582886},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4148581027984619},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.39159882068634033},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3279165029525757},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24736353754997253},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19164985418319702},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07457098364830017},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07156625390052795},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(02)00005-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(02)00005-7","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":39,"referenced_works":["https://openalex.org/W578482158","https://openalex.org/W1518691062","https://openalex.org/W1595746266","https://openalex.org/W1657398887","https://openalex.org/W1964094630","https://openalex.org/W1967175923","https://openalex.org/W1971240421","https://openalex.org/W1977190716","https://openalex.org/W1978052805","https://openalex.org/W1979890595","https://openalex.org/W1982489811","https://openalex.org/W1984284800","https://openalex.org/W1989026357","https://openalex.org/W1990359526","https://openalex.org/W1995149623","https://openalex.org/W1998705057","https://openalex.org/W2000490609","https://openalex.org/W2022378033","https://openalex.org/W2023127454","https://openalex.org/W2023485218","https://openalex.org/W2023685493","https://openalex.org/W2029146233","https://openalex.org/W2029707735","https://openalex.org/W2034077653","https://openalex.org/W2042021666","https://openalex.org/W2043239211","https://openalex.org/W2044826874","https://openalex.org/W2048261547","https://openalex.org/W2062087206","https://openalex.org/W2070568975","https://openalex.org/W2070816663","https://openalex.org/W2077554138","https://openalex.org/W2083745542","https://openalex.org/W2084637276","https://openalex.org/W2094691305","https://openalex.org/W2139283867","https://openalex.org/W2139738296","https://openalex.org/W2162346010","https://openalex.org/W2170620265"],"related_works":["https://openalex.org/W2074099177","https://openalex.org/W2796938634","https://openalex.org/W635954796","https://openalex.org/W2044018493","https://openalex.org/W2115152876","https://openalex.org/W1896204962","https://openalex.org/W2145041780","https://openalex.org/W2363136417","https://openalex.org/W2285713389","https://openalex.org/W1984876135"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":5},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}