{"id":"https://openalex.org/W1993367332","doi":"https://doi.org/10.1016/s0026-2714(01)00127-5","title":"Precise spice macromodel applied to high-voltage power MOSFET","display_name":"Precise spice macromodel applied to high-voltage power MOSFET","publication_year":2002,"publication_date":"2002-01-01","ids":{"openalex":"https://openalex.org/W1993367332","doi":"https://doi.org/10.1016/s0026-2714(01)00127-5","mag":"1993367332"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(01)00127-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00127-5","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053973245","display_name":"F.S Lomeli","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F.S Lomeli","raw_affiliation_strings":["On Semiconductor, Labna 1437, Cd. del Sol 45050, Zapopan, Jal., Mexico"],"affiliations":[{"raw_affiliation_string":"On Semiconductor, Labna 1437, Cd. del Sol 45050, Zapopan, Jal., Mexico","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043666384","display_name":"A. Cerdeira","orcid":"https://orcid.org/0000-0002-2114-2468"},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Center for Research and Advanced Studies of the National Polytechnic Institute","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"A Cerdeira","raw_affiliation_strings":["Dept de Ingenieria Electrica, SEES - CINVESTAV - IPN, Ave. IPN 2508, AP 14-740, Col. S.P. Zacatenco, 07300 Mexico DF, Mexico"],"affiliations":[{"raw_affiliation_string":"Dept de Ingenieria Electrica, SEES - CINVESTAV - IPN, Ave. IPN 2508, AP 14-740, Col. S.P. Zacatenco, 07300 Mexico DF, Mexico","institution_ids":["https://openalex.org/I68368234"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5043666384"],"corresponding_institution_ids":["https://openalex.org/I68368234"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.3425,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.57226847,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"42","issue":"1","first_page":"149","last_page":"152"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.828271210193634},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7481501698493958},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.7260947227478027},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5342205166816711},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5289164781570435},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5279050469398499},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5119775533676147},{"id":"https://openalex.org/keywords/channel-length-modulation","display_name":"Channel length modulation","score":0.5089035034179688},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4879598021507263},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.41784459352493286},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4162946343421936},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3864482045173645},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2331455945968628},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23279985785484314}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.828271210193634},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7481501698493958},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.7260947227478027},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5342205166816711},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5289164781570435},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5279050469398499},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5119775533676147},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.5089035034179688},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4879598021507263},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41784459352493286},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4162946343421936},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3864482045173645},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2331455945968628},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23279985785484314},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(01)00127-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00127-5","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W621559779","https://openalex.org/W2105340803","https://openalex.org/W3104994155"],"related_works":["https://openalex.org/W3081352656","https://openalex.org/W1835724189","https://openalex.org/W1526176912","https://openalex.org/W2376973747","https://openalex.org/W2390066960","https://openalex.org/W2545799744","https://openalex.org/W1969165531","https://openalex.org/W2136400454","https://openalex.org/W2009852498","https://openalex.org/W1979734172"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}