{"id":"https://openalex.org/W2153886487","doi":"https://doi.org/10.1016/s0026-2714(01)00069-5","title":"Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation","display_name":"Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation","publication_year":2001,"publication_date":"2001-07-01","ids":{"openalex":"https://openalex.org/W2153886487","doi":"https://doi.org/10.1016/s0026-2714(01)00069-5","mag":"2153886487"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(01)00069-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00069-5","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083603841","display_name":"B. Lanchava","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"B. Lanchava","raw_affiliation_strings":["Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049918570","display_name":"Peter Baumgartner","orcid":"https://orcid.org/0000-0003-3111-1494"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Baumgartner","raw_affiliation_strings":["Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040222158","display_name":"Andreas Martin","orcid":"https://orcid.org/0000-0002-7884-8867"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Martin","raw_affiliation_strings":["Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005669398","display_name":"Armand Beyer","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Beyer","raw_affiliation_strings":["Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035983979","display_name":"Erich Mueller","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"E. Mueller","raw_affiliation_strings":["Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Wernerwerkstra\u00dfe 2, D-93049 Regensburg, Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5083603841"],"corresponding_institution_ids":["https://openalex.org/I137594350"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.18552801,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":"7","first_page":"1097","last_page":"1100"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/surface-finish","display_name":"Surface finish","score":0.7384565472602844},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7006138563156128},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.6502217650413513},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.6062257289886475},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.5890597105026245},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5696831345558167},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5404257774353027},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.5281902551651001},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.49328726530075073},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.45332589745521545},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4494846761226654},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4281568229198456},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4242086112499237},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.4111630618572235},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38589638471603394},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3782065510749817},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28299278020858765},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.15567469596862793},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09977215528488159},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07599151134490967},{"id":"https://openalex.org/keywords/wetting","display_name":"Wetting","score":0.06849396228790283},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06329706311225891}],"concepts":[{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.7384565472602844},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7006138563156128},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.6502217650413513},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6062257289886475},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.5890597105026245},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5696831345558167},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5404257774353027},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.5281902551651001},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.49328726530075073},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.45332589745521545},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4494846761226654},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4281568229198456},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4242086112499237},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4111630618572235},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38589638471603394},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3782065510749817},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28299278020858765},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.15567469596862793},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09977215528488159},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07599151134490967},{"id":"https://openalex.org/C134514944","wikidata":"https://www.wikidata.org/wiki/Q817136","display_name":"Wetting","level":2,"score":0.06849396228790283},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06329706311225891},{"id":"https://openalex.org/C54517805","wikidata":"https://www.wikidata.org/wiki/Q7456118","display_name":"Sessile drop technique","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(01)00069-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00069-5","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1823818670","https://openalex.org/W2018047400","https://openalex.org/W2057109349","https://openalex.org/W2060674597","https://openalex.org/W2122686139","https://openalex.org/W2136581028"],"related_works":["https://openalex.org/W2539595190","https://openalex.org/W2099624314","https://openalex.org/W2106473374","https://openalex.org/W3160961382","https://openalex.org/W4229016249","https://openalex.org/W3038423925","https://openalex.org/W2150292786","https://openalex.org/W2077805257","https://openalex.org/W2311850564","https://openalex.org/W2361669760"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}