{"id":"https://openalex.org/W2067446909","doi":"https://doi.org/10.1016/s0026-2714(01)00040-3","title":"Recombination current measurements in the space charge region of MOS field-induced pn junctions","display_name":"Recombination current measurements in the space charge region of MOS field-induced pn junctions","publication_year":2001,"publication_date":"2001-06-01","ids":{"openalex":"https://openalex.org/W2067446909","doi":"https://doi.org/10.1016/s0026-2714(01)00040-3","mag":"2067446909"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(01)00040-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00040-3","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015764184","display_name":"R. Sorge","orcid":null},"institutions":[{"id":"https://openalex.org/I4210159354","display_name":"Institut f\u00fcr Solartechnologien (Germany)","ror":"https://ror.org/0529ecj14","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210159354"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"R Sorge","raw_affiliation_strings":["IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany"],"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I4210159354"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038277569","display_name":"B. Heinemann","orcid":"https://orcid.org/0000-0002-6868-1768"},"institutions":[{"id":"https://openalex.org/I4210159354","display_name":"Institut f\u00fcr Solartechnologien (Germany)","ror":"https://ror.org/0529ecj14","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210159354"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"B Heinemann","raw_affiliation_strings":["IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany"],"affiliations":[{"raw_affiliation_string":"IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany","institution_ids":["https://openalex.org/I4210159354"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5015764184"],"corresponding_institution_ids":["https://openalex.org/I4210159354"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14536215,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":"6","first_page":"789","last_page":"795"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5907328724861145},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5712710022926331},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5456252694129944},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"Gate voltage","score":0.5286363363265991},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5142526030540466},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.48584648966789246},{"id":"https://openalex.org/keywords/diffusion-capacitance","display_name":"Diffusion capacitance","score":0.45905670523643494},{"id":"https://openalex.org/keywords/charge-control","display_name":"Charge control","score":0.44873034954071045},{"id":"https://openalex.org/keywords/depletion-region","display_name":"Depletion region","score":0.4467304050922394},{"id":"https://openalex.org/keywords/space-charge","display_name":"Space charge","score":0.4358136057853699},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34230655431747437},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29589927196502686},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21680137515068054},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.17721325159072876},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1374131441116333},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.12731888890266418},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.07958042621612549},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.07211825251579285}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5907328724861145},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5712710022926331},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5456252694129944},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.5286363363265991},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5142526030540466},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.48584648966789246},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.45905670523643494},{"id":"https://openalex.org/C2777681924","wikidata":"https://www.wikidata.org/wiki/Q5074262","display_name":"Charge control","level":4,"score":0.44873034954071045},{"id":"https://openalex.org/C98446981","wikidata":"https://www.wikidata.org/wiki/Q288224","display_name":"Depletion region","level":3,"score":0.4467304050922394},{"id":"https://openalex.org/C103132145","wikidata":"https://www.wikidata.org/wiki/Q1669228","display_name":"Space charge","level":3,"score":0.4358136057853699},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34230655431747437},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29589927196502686},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21680137515068054},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.17721325159072876},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1374131441116333},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.12731888890266418},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.07958042621612549},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.07211825251579285},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C555008776","wikidata":"https://www.wikidata.org/wiki/Q267298","display_name":"Battery (electricity)","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(01)00040-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00040-3","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4699999988079071,"id":"https://metadata.un.org/sdg/6","display_name":"Clean water and sanitation"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1606243516","https://openalex.org/W1972003067","https://openalex.org/W2042002599","https://openalex.org/W2074780834","https://openalex.org/W2084465580"],"related_works":["https://openalex.org/W1979448382","https://openalex.org/W1982501856","https://openalex.org/W2480085578","https://openalex.org/W2377498266","https://openalex.org/W4231707103","https://openalex.org/W2005498387","https://openalex.org/W2103832757","https://openalex.org/W2008668247","https://openalex.org/W2165044695","https://openalex.org/W2162630107"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}