{"id":"https://openalex.org/W2077981603","doi":"https://doi.org/10.1016/s0026-2714(01)00016-6","title":"Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors","display_name":"Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors","publication_year":2001,"publication_date":"2001-06-01","ids":{"openalex":"https://openalex.org/W2077981603","doi":"https://doi.org/10.1016/s0026-2714(01)00016-6","mag":"2077981603"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(01)00016-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00016-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068829199","display_name":"M. Sanden","orcid":null},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":true,"raw_author_name":"Martin Sand\u00e9n","raw_affiliation_strings":["Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111835410","display_name":"B. Gunnar Malm","orcid":null},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"B Gunnar Malm","raw_affiliation_strings":["Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064408417","display_name":"Jan Grahn","orcid":"https://orcid.org/0000-0002-5439-870X"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Jan V Grahn","raw_affiliation_strings":["Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059858621","display_name":"Mikael \u00d6stling","orcid":"https://orcid.org/0000-0002-5845-3032"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Mikael \u00d6stling","raw_affiliation_strings":["Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden"],"affiliations":[{"raw_affiliation_string":"Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5068829199"],"corresponding_institution_ids":["https://openalex.org/I86987016"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.8709,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.77215614,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":"6","first_page":"881","last_page":"886"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.7740118503570557},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.7484319806098938},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.7132543325424194},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7065741419792175},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.692597508430481},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6758903861045837},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.6152039170265198},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.6052104234695435},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.6004286408424377},{"id":"https://openalex.org/keywords/infrasound","display_name":"Infrasound","score":0.576611340045929},{"id":"https://openalex.org/keywords/base","display_name":"Base (topology)","score":0.5116903781890869},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.38439998030662537},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3768860399723053},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.262656569480896},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16376137733459473},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1198788583278656},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11441412568092346},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08471757173538208},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.07878172397613525},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.07633072137832642}],"concepts":[{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.7740118503570557},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7484319806098938},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.7132543325424194},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7065741419792175},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.692597508430481},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6758903861045837},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6152039170265198},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6052104234695435},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.6004286408424377},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.576611340045929},{"id":"https://openalex.org/C42058472","wikidata":"https://www.wikidata.org/wiki/Q810214","display_name":"Base (topology)","level":2,"score":0.5116903781890869},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.38439998030662537},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3768860399723053},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.262656569480896},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16376137733459473},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1198788583278656},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11441412568092346},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08471757173538208},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.07878172397613525},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.07633072137832642},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(01)00016-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00016-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1483625982","https://openalex.org/W1499181171","https://openalex.org/W1942967854","https://openalex.org/W1965546987","https://openalex.org/W1976214936","https://openalex.org/W1998781564","https://openalex.org/W2003459178","https://openalex.org/W2010953375","https://openalex.org/W2027233970","https://openalex.org/W2028100672","https://openalex.org/W2057277303","https://openalex.org/W2059631927","https://openalex.org/W2083027030","https://openalex.org/W2090869135","https://openalex.org/W2091582086","https://openalex.org/W2104340505","https://openalex.org/W2106496941","https://openalex.org/W2112719795","https://openalex.org/W2129812840","https://openalex.org/W2133613998","https://openalex.org/W6644474583"],"related_works":["https://openalex.org/W2097864405","https://openalex.org/W2183816623","https://openalex.org/W2095982571","https://openalex.org/W2153032065","https://openalex.org/W2109944233","https://openalex.org/W1537531491","https://openalex.org/W2159616250","https://openalex.org/W1567282658","https://openalex.org/W2097673010","https://openalex.org/W2110386498"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}