{"id":"https://openalex.org/W2059536080","doi":"https://doi.org/10.1016/s0026-2714(01)00011-7","title":"Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide","display_name":"Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide","publication_year":2001,"publication_date":"2001-05-01","ids":{"openalex":"https://openalex.org/W2059536080","doi":"https://doi.org/10.1016/s0026-2714(01)00011-7","mag":"2059536080"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(01)00011-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00011-7","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023990409","display_name":"Kin P. Cheung","orcid":"https://orcid.org/0000-0003-2210-9907"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Kin P Cheung","raw_affiliation_strings":["Bell Laboratories, Lucent Technologies, Room 1B217, 600 Mountain Avenue, Murray Hill, NJ 07974, USA"],"affiliations":[{"raw_affiliation_string":"Bell Laboratories, Lucent Technologies, Room 1B217, 600 Mountain Avenue, Murray Hill, NJ 07974, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5023990409"],"corresponding_institution_ids":[],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.4355,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.69208969,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":"5","first_page":"745","last_page":"749"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.9546815752983093},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.7280770540237427},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.7165173888206482},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6816787719726562},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.67011559009552},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5734617114067078},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5532686114311218},{"id":"https://openalex.org/keywords/rectifier","display_name":"Rectifier (neural networks)","score":0.5465261340141296},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.537476658821106},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5058848261833191},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.46307480335235596},{"id":"https://openalex.org/keywords/nanosecond","display_name":"Nanosecond","score":0.45925185084342957},{"id":"https://openalex.org/keywords/transient-voltage-suppressor","display_name":"Transient voltage suppressor","score":0.43612009286880493},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4254993796348572},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3911851644515991},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3258797526359558},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.21360120177268982},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14821085333824158},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09220755100250244},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07256177067756653},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.06883561611175537}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.9546815752983093},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.7280770540237427},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.7165173888206482},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6816787719726562},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.67011559009552},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5734617114067078},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5532686114311218},{"id":"https://openalex.org/C50100734","wikidata":"https://www.wikidata.org/wiki/Q7303176","display_name":"Rectifier (neural networks)","level":5,"score":0.5465261340141296},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.537476658821106},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5058848261833191},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.46307480335235596},{"id":"https://openalex.org/C51141536","wikidata":"https://www.wikidata.org/wiki/Q838801","display_name":"Nanosecond","level":3,"score":0.45925185084342957},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.43612009286880493},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4254993796348572},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3911851644515991},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3258797526359558},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.21360120177268982},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14821085333824158},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09220755100250244},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07256177067756653},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.06883561611175537},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C147168706","wikidata":"https://www.wikidata.org/wiki/Q1457734","display_name":"Recurrent neural network","level":3,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86582703","wikidata":"https://www.wikidata.org/wiki/Q7617824","display_name":"Stochastic neural network","level":4,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(01)00011-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(01)00011-7","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.550000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1559010625","https://openalex.org/W1581327855","https://openalex.org/W1589467559","https://openalex.org/W1925913808","https://openalex.org/W1993049541","https://openalex.org/W2029437716","https://openalex.org/W2113488650","https://openalex.org/W2147877201","https://openalex.org/W2163648919","https://openalex.org/W2532269869"],"related_works":["https://openalex.org/W2075382567","https://openalex.org/W1490578062","https://openalex.org/W4223435591","https://openalex.org/W2019344161","https://openalex.org/W1496293429","https://openalex.org/W1936266116","https://openalex.org/W2586740853","https://openalex.org/W2110615434","https://openalex.org/W2169920509","https://openalex.org/W2520615759"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}