{"id":"https://openalex.org/W2033522216","doi":"https://doi.org/10.1016/s0026-2714(00)00218-3","title":"Neutron-induced 10B fission as a major source of soft errors in high density SRAMs","display_name":"Neutron-induced 10B fission as a major source of soft errors in high density SRAMs","publication_year":2001,"publication_date":"2001-02-01","ids":{"openalex":"https://openalex.org/W2033522216","doi":"https://doi.org/10.1016/s0026-2714(00)00218-3","mag":"2033522216"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(00)00218-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(00)00218-3","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078808048","display_name":"R. Baumann","orcid":"https://orcid.org/0000-0002-9159-1357"},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Robert C. Baumann","raw_affiliation_strings":["Silicon Technology Development Group, Texas Instruments Incorporated, P.O. Box 650311, MS 3737, Dallas, TX 75265, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Silicon Technology Development Group, Texas Instruments Incorporated, P.O. Box 650311, MS 3737, Dallas, TX 75265, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101148597","display_name":"E.B. Smith","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eric B. Smith","raw_affiliation_strings":["Silicon Technology Development Group, Texas Instruments Incorporated, P.O. Box 650311, MS 3737, Dallas, TX 75265, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Silicon Technology Development Group, Texas Instruments Incorporated, P.O. Box 650311, MS 3737, Dallas, TX 75265, USA","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5078808048"],"corresponding_institution_ids":["https://openalex.org/I74760111"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":3.9235,"has_fulltext":false,"cited_by_count":73,"citation_normalized_percentile":{"value":0.93069898,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"41","issue":"2","first_page":"211","last_page":"218"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.8018221855163574},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7343253493309021},{"id":"https://openalex.org/keywords/neutron","display_name":"Neutron","score":0.6935242414474487},{"id":"https://openalex.org/keywords/fission","display_name":"Fission","score":0.6856635808944702},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.5486843585968018},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4671088457107544},{"id":"https://openalex.org/keywords/fast-fission","display_name":"Fast fission","score":0.4461477994918823},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.43485501408576965},{"id":"https://openalex.org/keywords/neutron-emission","display_name":"Neutron emission","score":0.3377692401409149},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16323941946029663},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.09737589955329895}],"concepts":[{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.8018221855163574},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7343253493309021},{"id":"https://openalex.org/C152568617","wikidata":"https://www.wikidata.org/wiki/Q2348","display_name":"Neutron","level":2,"score":0.6935242414474487},{"id":"https://openalex.org/C12294094","wikidata":"https://www.wikidata.org/wiki/Q929080","display_name":"Fission","level":3,"score":0.6856635808944702},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.5486843585968018},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4671088457107544},{"id":"https://openalex.org/C196449825","wikidata":"https://www.wikidata.org/wiki/Q4391473","display_name":"Fast fission","level":5,"score":0.4461477994918823},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.43485501408576965},{"id":"https://openalex.org/C153336213","wikidata":"https://www.wikidata.org/wiki/Q898923","display_name":"Neutron emission","level":4,"score":0.3377692401409149},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16323941946029663},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.09737589955329895}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(00)00218-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(00)00218-3","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332178","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1832826393","https://openalex.org/W1975157752","https://openalex.org/W1981194937","https://openalex.org/W1987670476","https://openalex.org/W2023856022","https://openalex.org/W2052153312","https://openalex.org/W2054593687","https://openalex.org/W2079342906","https://openalex.org/W2108605163","https://openalex.org/W2116097016","https://openalex.org/W2143557070","https://openalex.org/W2155051493","https://openalex.org/W4235673137"],"related_works":["https://openalex.org/W1983390678","https://openalex.org/W1971455254","https://openalex.org/W25194282","https://openalex.org/W86392230","https://openalex.org/W2048878493","https://openalex.org/W1563025589","https://openalex.org/W2887040224","https://openalex.org/W2077281778","https://openalex.org/W1505486586","https://openalex.org/W2081723523"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}