{"id":"https://openalex.org/W2030762487","doi":"https://doi.org/10.1016/s0026-2692(03)00041-7","title":"Light emission from cubic InGaN nanostructures","display_name":"Light emission from cubic InGaN nanostructures","publication_year":2003,"publication_date":"2003-04-05","ids":{"openalex":"https://openalex.org/W2030762487","doi":"https://doi.org/10.1016/s0026-2692(03)00041-7","mag":"2030762487"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2692(03)00041-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2692(03)00041-7","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043161369","display_name":"K. Lischka","orcid":null},"institutions":[{"id":"https://openalex.org/I206945453","display_name":"Paderborn University","ror":"https://ror.org/058kzsd48","country_code":"DE","type":"education","lineage":["https://openalex.org/I206945453"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"K. Lischka","raw_affiliation_strings":["Department of Physics, University of Paderborn, Warburgerstr. 100, D-33098 Paderborn, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Physics, University of Paderborn, Warburgerstr. 100, D-33098 Paderborn, Germany","institution_ids":["https://openalex.org/I206945453"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5043161369"],"corresponding_institution_ids":["https://openalex.org/I206945453"],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.10074539,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"34","issue":"5-8","first_page":"427","last_page":"433"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/photoluminescence","display_name":"Photoluminescence","score":0.8092854022979736},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7774600982666016},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.7188559770584106},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.7154760360717773},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6059887409210205},{"id":"https://openalex.org/keywords/metastability","display_name":"Metastability","score":0.5980572700500488},{"id":"https://openalex.org/keywords/nanostructure","display_name":"Nanostructure","score":0.5733077526092529},{"id":"https://openalex.org/keywords/raman-scattering","display_name":"Raman scattering","score":0.544272780418396},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.5199219584465027},{"id":"https://openalex.org/keywords/raman-spectroscopy","display_name":"Raman spectroscopy","score":0.5163341760635376},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4463900625705719},{"id":"https://openalex.org/keywords/light-emission","display_name":"Light emission","score":0.44510340690612793},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.2920689582824707},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.28397315740585327},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.22246116399765015},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08606278896331787},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.062145501375198364}],"concepts":[{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.8092854022979736},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7774600982666016},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7188559770584106},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7154760360717773},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6059887409210205},{"id":"https://openalex.org/C89464430","wikidata":"https://www.wikidata.org/wiki/Q849516","display_name":"Metastability","level":2,"score":0.5980572700500488},{"id":"https://openalex.org/C186187911","wikidata":"https://www.wikidata.org/wiki/Q1093894","display_name":"Nanostructure","level":2,"score":0.5733077526092529},{"id":"https://openalex.org/C169573571","wikidata":"https://www.wikidata.org/wiki/Q466824","display_name":"Raman scattering","level":3,"score":0.544272780418396},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5199219584465027},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.5163341760635376},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4463900625705719},{"id":"https://openalex.org/C2985930086","wikidata":"https://www.wikidata.org/wiki/Q65037198","display_name":"Light emission","level":2,"score":0.44510340690612793},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2920689582824707},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28397315740585327},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.22246116399765015},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08606278896331787},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.062145501375198364},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2692(03)00041-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2692(03)00041-7","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/15","score":0.4699999988079071,"display_name":"Life in Land"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W122808680","https://openalex.org/W1488296117","https://openalex.org/W1518615905","https://openalex.org/W1599389906","https://openalex.org/W1967283161","https://openalex.org/W1974307528","https://openalex.org/W1983459646","https://openalex.org/W1990256149","https://openalex.org/W1990990363","https://openalex.org/W1992080899","https://openalex.org/W1993311701","https://openalex.org/W1994296859","https://openalex.org/W1994992876","https://openalex.org/W1998598977","https://openalex.org/W2001332898","https://openalex.org/W2001472161","https://openalex.org/W2001839700","https://openalex.org/W2006341600","https://openalex.org/W2007221346","https://openalex.org/W2011965140","https://openalex.org/W2019345638","https://openalex.org/W2020097361","https://openalex.org/W2022380304","https://openalex.org/W2022595039","https://openalex.org/W2022663910","https://openalex.org/W2030138482","https://openalex.org/W2053417120","https://openalex.org/W2081795333","https://openalex.org/W2085499112","https://openalex.org/W2086322960","https://openalex.org/W2089100518"],"related_works":["https://openalex.org/W4307107610","https://openalex.org/W3213627526","https://openalex.org/W4226159838","https://openalex.org/W3138976155","https://openalex.org/W1992748572","https://openalex.org/W2082939555","https://openalex.org/W2088012056","https://openalex.org/W2790243943","https://openalex.org/W2934478469","https://openalex.org/W2057495852"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}