{"id":"https://openalex.org/W7165132945","doi":"https://doi.org/10.1016/j.vlsi.2026.102798","title":"A novel subthreshold neuromorphic core with Izhikevich recovery variable reuse for hardware-efficient Spike-Driven Synaptic Plasticity","display_name":"A novel subthreshold neuromorphic core with Izhikevich recovery variable reuse for hardware-efficient Spike-Driven Synaptic Plasticity","publication_year":2026,"publication_date":"2026-06-18","ids":{"openalex":"https://openalex.org/W7165132945","doi":"https://doi.org/10.1016/j.vlsi.2026.102798"},"language":"en","primary_location":{"id":"doi:10.1016/j.vlsi.2026.102798","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.vlsi.2026.102798","pdf_url":null,"source":{"id":"https://openalex.org/S139392130","display_name":"Integration","issn_l":"0167-9260","issn":["0167-9260","1872-7522"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Integration","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000197017","display_name":"Amr Hassan","orcid":"https://orcid.org/0000-0001-7374-7074"},"institutions":[{"id":"https://openalex.org/I96823368","display_name":"German University in Cairo","ror":"https://ror.org/03rjt0z37","country_code":"EG","type":"education","lineage":["https://openalex.org/I96823368"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Amr Hassan","raw_affiliation_strings":["German University in Cairo, Electronics Dept., New Cairo, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"German University in Cairo, Electronics Dept., New Cairo, Cairo, Egypt","institution_ids":["https://openalex.org/I96823368"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5122892879","display_name":"Eman Azab","orcid":null},"institutions":[{"id":"https://openalex.org/I96823368","display_name":"German University in Cairo","ror":"https://ror.org/03rjt0z37","country_code":"EG","type":"education","lineage":["https://openalex.org/I96823368"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Eman Azab","raw_affiliation_strings":["German University in Cairo, Electronics Dept., New Cairo, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"German University in Cairo, Electronics Dept., New Cairo, Cairo, Egypt","institution_ids":["https://openalex.org/I96823368"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5000197017","https://openalex.org/A5122892879"],"corresponding_institution_ids":["https://openalex.org/I96823368"],"apc_list":{"value":2230,"currency":"USD","value_usd":2230},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.54211181,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"110","issue":null,"first_page":"102798","last_page":"102798"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8587999939918518},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5383999943733215},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.42660000920295715},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.3625999987125397},{"id":"https://openalex.org/keywords/reservoir-computing","display_name":"Reservoir computing","score":0.35530000925064087},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.3084999918937683},{"id":"https://openalex.org/keywords/spiking-neural-network","display_name":"Spiking neural network","score":0.30390000343322754},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2879999876022339}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8587999939918518},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6011000275611877},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5383999943733215},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4607999920845032},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.42660000920295715},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.3625999987125397},{"id":"https://openalex.org/C135796866","wikidata":"https://www.wikidata.org/wiki/Q7315328","display_name":"Reservoir computing","level":4,"score":0.35530000925064087},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.3084999918937683},{"id":"https://openalex.org/C11731999","wikidata":"https://www.wikidata.org/wiki/Q9067355","display_name":"Spiking neural network","level":3,"score":0.30390000343322754},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2879999876022339},{"id":"https://openalex.org/C118021083","wikidata":"https://www.wikidata.org/wiki/Q610398","display_name":"System on a chip","level":2,"score":0.2847000062465668},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.27799999713897705},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.27730000019073486},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.2768999934196472},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.26440000534057617},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2621999979019165},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.26030001044273376},{"id":"https://openalex.org/C118993495","wikidata":"https://www.wikidata.org/wiki/Q5042828","display_name":"Electrical efficiency","level":3,"score":0.2563999891281128},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.2549000084400177}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.vlsi.2026.102798","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.vlsi.2026.102798","pdf_url":null,"source":{"id":"https://openalex.org/S139392130","display_name":"Integration","issn_l":"0167-9260","issn":["0167-9260","1872-7522"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Integration","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.9135813117027283,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1484829657","https://openalex.org/W1542981317","https://openalex.org/W1935332602","https://openalex.org/W1975072631","https://openalex.org/W1975412204","https://openalex.org/W2008901850","https://openalex.org/W2034602202","https://openalex.org/W2043569928","https://openalex.org/W2046450149","https://openalex.org/W2051601318","https://openalex.org/W2103507131","https://openalex.org/W2109596721","https://openalex.org/W2112181056","https://openalex.org/W2112408199","https://openalex.org/W2138913040","https://openalex.org/W2147101007","https://openalex.org/W2150447451","https://openalex.org/W2157239334","https://openalex.org/W2162279286","https://openalex.org/W2162651880","https://openalex.org/W2164653071","https://openalex.org/W2768519025","https://openalex.org/W2783525259","https://openalex.org/W2795655975","https://openalex.org/W2907149254","https://openalex.org/W2938616020","https://openalex.org/W2955954619","https://openalex.org/W2980561559","https://openalex.org/W2983881821","https://openalex.org/W2998659810","https://openalex.org/W3003234264","https://openalex.org/W3023848433","https://openalex.org/W3115565033","https://openalex.org/W3152668455","https://openalex.org/W4324063749","https://openalex.org/W4387377060","https://openalex.org/W4388941025","https://openalex.org/W4390187136","https://openalex.org/W4400765268","https://openalex.org/W7125618318"],"related_works":[],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2026-06-19T00:00:00"}