{"id":"https://openalex.org/W2895727083","doi":"https://doi.org/10.1016/j.microrel.2018.06.041","title":"Degradation of GaN-on-GaN vertical diodes submitted to high current stress","display_name":"Degradation of GaN-on-GaN vertical diodes submitted to high current stress","publication_year":2018,"publication_date":"2018-09-01","ids":{"openalex":"https://openalex.org/W2895727083","doi":"https://doi.org/10.1016/j.microrel.2018.06.041","mag":"2895727083"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2018.06.041","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.microrel.2018.06.041","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://doi.org/10.1016/j.microrel.2018.06.041","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020964017","display_name":"Elena Fabris","orcid":"https://orcid.org/0000-0003-1345-5111"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"E. Fabris","raw_affiliation_strings":["Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059611177","display_name":"Matteo Meneghini","orcid":"https://orcid.org/0000-0003-2421-505X"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Meneghini","raw_affiliation_strings":["Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064109540","display_name":"Carlo De Santi","orcid":"https://orcid.org/0000-0001-6064-077X"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. De Santi","raw_affiliation_strings":["Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033665254","display_name":"Zongyang Hu","orcid":"https://orcid.org/0000-0001-7854-8875"},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Z. Hu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018794571","display_name":"Wenshen Li","orcid":"https://orcid.org/0000-0002-9353-046X"},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Li","raw_affiliation_strings":["School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021032119","display_name":"Kazuki Nomoto","orcid":null},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Nomoto","raw_affiliation_strings":["School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088173830","display_name":"Xiaoqin Gao","orcid":"https://orcid.org/0000-0001-5043-1122"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"X. Gao","raw_affiliation_strings":["IQE RF LLC, Somerset, NJ 08873, USA"],"affiliations":[{"raw_affiliation_string":"IQE RF LLC, Somerset, NJ 08873, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025634398","display_name":"Debdeep Jena","orcid":"https://orcid.org/0000-0002-4076-4625"},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Jena","raw_affiliation_strings":["School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Kavli Institute at Cornell for Nanoscience, Cornell University, Ithaca, NY 14853, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Kavli Institute at Cornell for Nanoscience, Cornell University, Ithaca, NY 14853, USA","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064832078","display_name":"Huili Grace Xing","orcid":"https://orcid.org/0000-0002-2709-3839"},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.G. Xing","raw_affiliation_strings":["School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Kavli Institute at Cornell for Nanoscience, Cornell University, Ithaca, NY 14853, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Kavli Institute at Cornell for Nanoscience, Cornell University, Ithaca, NY 14853, USA","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101587480","display_name":"Gaudenzio Meneghesso","orcid":"https://orcid.org/0000-0002-6715-4827"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Meneghesso","raw_affiliation_strings":["Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002653396","display_name":"Enrico Zanoni","orcid":"https://orcid.org/0000-0001-7349-9656"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Zanoni","raw_affiliation_strings":["Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5020964017"],"corresponding_institution_ids":["https://openalex.org/I138689650"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":{"value":2190,"currency":"USD","value_usd":2190},"fwci":1.2968,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.81445113,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"88-90","issue":null,"first_page":"568","last_page":"571"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7438358068466187},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7219928503036499},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6859025955200195},{"id":"https://openalex.org/keywords/electroluminescence","display_name":"Electroluminescence","score":0.6718788146972656},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5257725715637207},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.518464982509613},{"id":"https://openalex.org/keywords/light-emitting-diode","display_name":"Light-emitting diode","score":0.5126435160636902},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.48446178436279297},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4435954988002777},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.43452176451683044},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.4323524236679077},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4170016050338745},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28469058871269226},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14858737587928772}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7438358068466187},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7219928503036499},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6859025955200195},{"id":"https://openalex.org/C31625292","wikidata":"https://www.wikidata.org/wiki/Q215803","display_name":"Electroluminescence","level":3,"score":0.6718788146972656},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5257725715637207},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.518464982509613},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.5126435160636902},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.48446178436279297},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4435954988002777},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.43452176451683044},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.4323524236679077},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4170016050338745},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28469058871269226},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14858737587928772},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1016/j.microrel.2018.06.041","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.microrel.2018.06.041","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},{"id":"pmh:oai:zenodo.org:37730","is_oa":true,"landing_page_url":"https://www.openaccessrepository.it/record/37730","pdf_url":"https://zenodo.org/record/37730","source":{"id":"https://openalex.org/S4306402478","display_name":"INFM-OAR (INFN Catania)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210116497","host_organization_name":"Istituto Nazionale di Fisica Nucleare, Sezione di Catania","host_organization_lineage":["https://openalex.org/I4210116497"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:www.research.unipd.it:11577/3288919","is_oa":false,"landing_page_url":"http://hdl.handle.net/11577/3288919","pdf_url":null,"source":{"id":"https://openalex.org/S4377196283","display_name":"Research Padua  Archive (University of Padua)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1016/j.microrel.2018.06.041","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.microrel.2018.06.041","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.75,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G6359302085","display_name":null,"funder_award_id":"NoveGaN","funder_id":"https://openalex.org/F4320321966","funder_display_name":"Universit\u00e0 degli Studi di Padova"}],"funders":[{"id":"https://openalex.org/F4320321966","display_name":"Universit\u00e0 degli Studi di Padova","ror":"https://ror.org/00240q980"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1510192432","https://openalex.org/W1986074426","https://openalex.org/W1993712100","https://openalex.org/W2015866014","https://openalex.org/W2048781276","https://openalex.org/W2052351478","https://openalex.org/W2069575489","https://openalex.org/W2098086548","https://openalex.org/W2133535033","https://openalex.org/W2160939172","https://openalex.org/W2168546048","https://openalex.org/W2201743863","https://openalex.org/W2275658335","https://openalex.org/W2290635622","https://openalex.org/W2340233915","https://openalex.org/W2518799130","https://openalex.org/W2624323421","https://openalex.org/W2788013722","https://openalex.org/W2898768671","https://openalex.org/W4285719527","https://openalex.org/W6696868463","https://openalex.org/W6731967124","https://openalex.org/W6748590580"],"related_works":["https://openalex.org/W2150038201","https://openalex.org/W1976110942","https://openalex.org/W940975362","https://openalex.org/W2038762453","https://openalex.org/W2382302308","https://openalex.org/W4248751768","https://openalex.org/W2137930185","https://openalex.org/W1790618316","https://openalex.org/W1972712827","https://openalex.org/W2015866014"],"abstract_inverted_index":{"GaN-on-GaN":[0,35,50],"vertical":[1,36],"devices":[2,37,87],"are":[3,146],"expected":[4],"to":[5,13,54,80,118,175],"find":[6],"wide":[7],"application":[8],"in":[9,41,91,97,102,113,121,168,171,182],"power":[10],"electronics,":[11],"thanks":[12],"the":[14,18,22,32,42,47,86,92,103,106,111,119,122,127,130,158,163,176],"high":[15,23,57,83],"current":[16,58,84],"densities,":[17],"low":[19],"on-resistance":[20,114,190],"and":[21,70,181],"breakdown":[24],"voltage.":[25],"So":[26],"far,":[27],"only":[28],"few":[29],"papers":[30],"on":[31,137],"reliability":[33],"of":[34,49,67,108,140,155,178],"have":[38,133],"been":[39],"published":[40],"literature.":[43],"This":[44,166],"paper":[45],"investigates":[46],"degradation":[48,131],"pn":[51,164],"diodes":[52],"submitted":[53,79],"stress":[55,81,151],"at":[56,82],"density.":[59],"The":[60,144],"study":[61],"was":[62],"carried":[63],"out":[64],"by":[65,126,148],"means":[66],"electrical":[68,93],"characterization":[69],"electroluminescence":[71],"(EL)":[72],"measurements.":[73],"We":[74],"demonstrate":[75],"that:":[76],"(i)":[77],"when":[78],"density,":[85],"show":[88],"significant":[89],"changes":[90],"characteristics:":[94],"an":[95,100],"increase":[96,101,112],"on-resistance/turn-on":[98],"voltage,":[99],"generation/recombination":[104],"components,":[105],"creation":[107,177],"shunt-paths.":[109],"(ii)":[110],"is":[115],"strongly":[116],"correlated":[117,197],"decrease":[120,170],"EL":[123,193],"signal":[124,194],"emitted":[125],"diodes.":[128],"(iii)":[129],"kinetics":[132],"a":[134,141,153,169,183,188,196],"square-root":[135],"dependence":[136],"time,":[138],"indicative":[139],"diffusion":[142,154],"process.":[143],"results":[145,167],"interpreted":[147],"considering":[149],"that":[150],"induces":[152],"hydrogen":[156],"from":[157],"highly-p-type":[159],"doped":[160],"surface":[161],"towards":[162],"junction.":[165],"hole":[172,185],"concentration,":[173],"due":[174],"MgH":[179],"bonds,":[180],"lower":[184],"injection.":[186],"As":[187],"consequence,":[189],"increases":[191],"while":[192],"shows":[195],"decrease.":[198]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}