{"id":"https://openalex.org/W2151277840","doi":"https://doi.org/10.1016/j.microrel.2015.09.024","title":"Scaling DC lifetests on GaN HEMT to RF conditions","display_name":"Scaling DC lifetests on GaN HEMT to RF conditions","publication_year":2015,"publication_date":"2015-11-04","ids":{"openalex":"https://openalex.org/W2151277840","doi":"https://doi.org/10.1016/j.microrel.2015.09.024","mag":"2151277840"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2015.09.024","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2015.09.024","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045446264","display_name":"B.M. Paine","orcid":"https://orcid.org/0000-0002-9419-7371"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Bruce M. Paine","raw_affiliation_strings":["Technology Qualification, Boeing Network and Space Systems, El Segundo CA, USA"],"affiliations":[{"raw_affiliation_string":"Technology Qualification, Boeing Network and Space Systems, El Segundo CA, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5045446264"],"corresponding_institution_ids":[],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":1.0341,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.77443193,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"55","issue":"12","first_page":"2499","last_page":"2504"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7629166841506958},{"id":"https://openalex.org/keywords/mean-time-between-failures","display_name":"Mean time between failures","score":0.7501824498176575},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7185083627700806},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.5870794057846069},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.556627631187439},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5263285040855408},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5094574093818665},{"id":"https://openalex.org/keywords/signature","display_name":"Signature (topology)","score":0.465295672416687},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44174402952194214},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4292370676994324},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.40660908818244934},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3854738473892212},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33071497082710266},{"id":"https://openalex.org/keywords/failure-rate","display_name":"Failure rate","score":0.25940805673599243},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.250522255897522},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24411076307296753},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22983604669570923},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2216198742389679},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.176646888256073},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.1456434726715088},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.0728955864906311}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7629166841506958},{"id":"https://openalex.org/C44154001","wikidata":"https://www.wikidata.org/wiki/Q754940","display_name":"Mean time between failures","level":3,"score":0.7501824498176575},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7185083627700806},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.5870794057846069},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.556627631187439},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5263285040855408},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5094574093818665},{"id":"https://openalex.org/C2779696439","wikidata":"https://www.wikidata.org/wiki/Q7512811","display_name":"Signature (topology)","level":2,"score":0.465295672416687},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44174402952194214},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4292370676994324},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.40660908818244934},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3854738473892212},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33071497082710266},{"id":"https://openalex.org/C163164238","wikidata":"https://www.wikidata.org/wiki/Q2737027","display_name":"Failure rate","level":2,"score":0.25940805673599243},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.250522255897522},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24411076307296753},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22983604669570923},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2216198742389679},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.176646888256073},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1456434726715088},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0728955864906311},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2015.09.024","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2015.09.024","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Responsible consumption and production","score":0.49000000953674316,"id":"https://metadata.un.org/sdg/12"}],"awards":[{"id":"https://openalex.org/G3214254845","display_name":null,"funder_award_id":"FA8650-11-2-1187","funder_id":"https://openalex.org/F4320338294","funder_display_name":"Air Force Research Laboratory"}],"funders":[{"id":"https://openalex.org/F4320338294","display_name":"Air Force Research Laboratory","ror":"https://ror.org/02e2egq70"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1481672268","https://openalex.org/W1532396321","https://openalex.org/W2018283815","https://openalex.org/W2031164960","https://openalex.org/W2031625458","https://openalex.org/W2038280026","https://openalex.org/W2075319576","https://openalex.org/W2129815626","https://openalex.org/W2157958892","https://openalex.org/W2160833768","https://openalex.org/W2181911685","https://openalex.org/W2565209232","https://openalex.org/W6632021359","https://openalex.org/W6654901659","https://openalex.org/W6658622777","https://openalex.org/W6669530465","https://openalex.org/W6679365099"],"related_works":["https://openalex.org/W1983353130","https://openalex.org/W168429299","https://openalex.org/W1513192318","https://openalex.org/W2064185557","https://openalex.org/W2114661492","https://openalex.org/W2059606485","https://openalex.org/W2081804767","https://openalex.org/W1971823982","https://openalex.org/W4251879367","https://openalex.org/W2564310820"],"abstract_inverted_index":null,"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}