{"id":"https://openalex.org/W1966415821","doi":"https://doi.org/10.1016/j.microrel.2014.05.011","title":"Total-ionizing-dose effects and reliability of carbon nanotube FET devices","display_name":"Total-ionizing-dose effects and reliability of carbon nanotube FET devices","publication_year":2014,"publication_date":"2014-06-21","ids":{"openalex":"https://openalex.org/W1966415821","doi":"https://doi.org/10.1016/j.microrel.2014.05.011","mag":"1966415821"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2014.05.011","doi":"https://doi.org/10.1016/j.microrel.2014.05.011","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2014.05.011","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012518929","display_name":"Cher Xuan Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Cher Xuan Zhang","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009879848","display_name":"En Xia Zhang","orcid":"https://orcid.org/0000-0002-8021-2411","observed_orcids":["https://orcid.org/0000-0002-8021-2411"]},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"En Xia Zhang","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049822123","display_name":"Daniel M. Fleetwood","orcid":"https://orcid.org/0000-0003-4257-7142","observed_orcids":["https://orcid.org/0000-0003-4257-7142"]},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Daniel M. Fleetwood","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108500209","display_name":"Michael L. Alles","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael L. Alles","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035965053","display_name":"Ronald D. Schrimpf","orcid":"https://orcid.org/0000-0001-7419-2701","observed_orcids":["https://orcid.org/0000-0001-7419-2701"]},"institutions":[{"id":"https://openalex.org/I200719446","display_name":"Vanderbilt University","ror":"https://ror.org/02vm5rt34","country_code":"US","type":"education","lineage":["https://openalex.org/I200719446"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ronald D. Schrimpf","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA","institution_ids":["https://openalex.org/I200719446"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065180272","display_name":"Chris Rutherglen","orcid":"https://orcid.org/0000-0001-7155-5132","observed_orcids":["https://orcid.org/0000-0001-7155-5132"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chris Rutherglen","raw_affiliation_strings":["Aneeve LLC, Los Angeles, CA 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Aneeve LLC, Los Angeles, CA 90095, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109887410","display_name":"Kos Galatsis","orcid":"https://orcid.org/0009-0000-9802-4673","observed_orcids":["https://orcid.org/0009-0000-9802-4673"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kosmas Galatsis","raw_affiliation_strings":["Aneeve LLC, Los Angeles, CA 90095, USA","Material Science and Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Aneeve LLC, Los Angeles, CA 90095, USA","institution_ids":[]},{"raw_affiliation_string":"Material Science and Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095, USA","institution_ids":["https://openalex.org/I161318765"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5012518929"],"corresponding_institution_ids":["https://openalex.org/I200719446"],"apc_list":{"value":2280,"currency":"USD","value_usd":2280},"apc_paid":null,"fwci":0.3535,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.66315101,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"54","issue":"11","first_page":"2355","last_page":"2359"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.9810000061988831},{"id":"https://openalex.org/keywords/total-ionizing-dose-effects","display_name":"total ionizing dose effects","score":0.8270000219345093},{"id":"https://openalex.org/keywords/x-ray-irradiation","display_name":"X-ray irradiation","score":0.8339999914169312},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.7089999914169312},{"id":"https://openalex.org/keywords/electrical-stress","display_name":"electrical stress","score":0.7519999742507935},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.8970000147819519},{"id":"https://openalex.org/keywords/memory-window","display_name":"memory window","score":0.7689999938011169},{"id":"https://openalex.org/keywords/drain-current-degradation","display_name":"drain current degradation","score":0.8529999852180481},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.8989999890327454}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7115148901939392},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6996459364891052},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6514507532119751},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.630990743637085},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.51227205991745},{"id":"https://openalex.org/C18231593","wikidata":"https://www.wikidata.org/wiki/Q186161","display_name":"Ionizing radiation","level":3,"score":0.5110946297645569},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.4846521019935608},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.4811736047267914},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46193990111351013},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.45209768414497375},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.44372352957725525},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4207399785518646},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4158863425254822},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.41425007581710815},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4132627844810486},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41190671920776367},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3802286386489868},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30830374360084534},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08498021960258484},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.08231192827224731},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07360184192657471},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2014.05.011","doi":"https://doi.org/10.1016/j.microrel.2014.05.011","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2014.05.011","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332186","display_name":"Defense Threat Reduction Agency","ror":"https://ror.org/04tz64554"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1646294624","https://openalex.org/W1972856299","https://openalex.org/W1980610603","https://openalex.org/W1989043432","https://openalex.org/W1999421581","https://openalex.org/W2005107548","https://openalex.org/W2011298872","https://openalex.org/W2016065866","https://openalex.org/W2023421066","https://openalex.org/W2024543789","https://openalex.org/W2036488529","https://openalex.org/W2039095809","https://openalex.org/W2043327462","https://openalex.org/W2046774440","https://openalex.org/W2049142984","https://openalex.org/W2054893389","https://openalex.org/W2055673935","https://openalex.org/W2060139435","https://openalex.org/W2063011696","https://openalex.org/W2063564066","https://openalex.org/W2067927107","https://openalex.org/W2084975238","https://openalex.org/W2086680662","https://openalex.org/W2093538594","https://openalex.org/W2105806861","https://openalex.org/W2144383902","https://openalex.org/W2148071019","https://openalex.org/W2160319990","https://openalex.org/W2164531646","https://openalex.org/W2166602506","https://openalex.org/W2331425538","https://openalex.org/W3100646474","https://openalex.org/W6636906425"],"related_works":["https://openalex.org/W3193351953","https://openalex.org/W3215192800","https://openalex.org/W2069427488","https://openalex.org/W4281694563","https://openalex.org/W1991749407","https://openalex.org/W2247337557","https://openalex.org/W2075215083","https://openalex.org/W2016581333","https://openalex.org/W3145740582","https://openalex.org/W2067927107"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-10-10T09:11:00.788812","created_date":"2025-10-10T00:00:00"}