{"id":"https://openalex.org/W1981568650","doi":"https://doi.org/10.1016/j.microrel.2013.12.020","title":"Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown","display_name":"Electron fluence driven, Cu catalyzed, interface breakdown mechanism for BEOL low-k time dependent dielectric breakdown","publication_year":2014,"publication_date":"2014-02-01","ids":{"openalex":"https://openalex.org/W1981568650","doi":"https://doi.org/10.1016/j.microrel.2013.12.020","mag":"1981568650"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2013.12.020","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2013.12.020","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055084879","display_name":"Fen Chen","orcid":"https://orcid.org/0000-0002-3921-9152"},"institutions":[{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Fen Chen","raw_affiliation_strings":["IBM Systems and Technology Group, Essex Junction, VT 05452, United States"],"affiliations":[{"raw_affiliation_string":"IBM Systems and Technology Group, Essex Junction, VT 05452, United States","institution_ids":["https://openalex.org/I4210134083"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059223254","display_name":"M. Shinosky","orcid":null},"institutions":[{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael A. Shinosky","raw_affiliation_strings":["IBM Systems and Technology Group, Essex Junction, VT 05452, United States"],"affiliations":[{"raw_affiliation_string":"IBM Systems and Technology Group, Essex Junction, VT 05452, United States","institution_ids":["https://openalex.org/I4210134083"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5055084879"],"corresponding_institution_ids":["https://openalex.org/I4210134083"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":2.9307,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.91621896,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"54","issue":"3","first_page":"529","last_page":"540"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9890999794006348,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.9267779588699341},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.7598620057106018},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6929914951324463},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5904141664505005},{"id":"https://openalex.org/keywords/low-k-dielectric","display_name":"Low-k dielectric","score":0.5423917770385742},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5109447836875916},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.47527876496315},{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.44700244069099426},{"id":"https://openalex.org/keywords/copper-interconnect","display_name":"Copper interconnect","score":0.4352942705154419},{"id":"https://openalex.org/keywords/silc","display_name":"SILC","score":0.43490588665008545},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40415167808532715},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40049609541893005},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3287855386734009},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29750820994377136},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.2733864188194275},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.24502715468406677},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11196646094322205},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.09645134210586548},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06766048073768616}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.9267779588699341},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.7598620057106018},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6929914951324463},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5904141664505005},{"id":"https://openalex.org/C2779866884","wikidata":"https://www.wikidata.org/wiki/Q1872538","display_name":"Low-k dielectric","level":3,"score":0.5423917770385742},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5109447836875916},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.47527876496315},{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.44700244069099426},{"id":"https://openalex.org/C116372231","wikidata":"https://www.wikidata.org/wiki/Q605757","display_name":"Copper interconnect","level":3,"score":0.4352942705154419},{"id":"https://openalex.org/C86642149","wikidata":"https://www.wikidata.org/wiki/Q7390375","display_name":"SILC","level":3,"score":0.43490588665008545},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40415167808532715},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40049609541893005},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3287855386734009},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29750820994377136},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.2733864188194275},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.24502715468406677},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11196646094322205},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.09645134210586548},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06766048073768616},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2013.12.020","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2013.12.020","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320307762","display_name":"International Business Machines Corporation","ror":"https://ror.org/05hh8d621"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1897094372","https://openalex.org/W1973114892","https://openalex.org/W1973685869","https://openalex.org/W2002212479","https://openalex.org/W2026877207","https://openalex.org/W2044165471","https://openalex.org/W2047339079","https://openalex.org/W2065239354","https://openalex.org/W2065810835","https://openalex.org/W2067248192","https://openalex.org/W2072534458","https://openalex.org/W2075697254","https://openalex.org/W2090192445","https://openalex.org/W2094108663","https://openalex.org/W2119319062","https://openalex.org/W2142084274","https://openalex.org/W2154200624"],"related_works":["https://openalex.org/W2159053552","https://openalex.org/W2087286400","https://openalex.org/W1966474828","https://openalex.org/W1966012137","https://openalex.org/W2161893915","https://openalex.org/W2072534458","https://openalex.org/W2129336955","https://openalex.org/W1981568650","https://openalex.org/W2006694035","https://openalex.org/W2136993597"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}