{"id":"https://openalex.org/W2029915505","doi":"https://doi.org/10.1016/j.microrel.2012.06.012","title":"Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown","display_name":"Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown","publication_year":2012,"publication_date":"2012-07-02","ids":{"openalex":"https://openalex.org/W2029915505","doi":"https://doi.org/10.1016/j.microrel.2012.06.012","mag":"2029915505"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2012.06.012","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2012.06.012","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041660505","display_name":"E. Miranda","orcid":"https://orcid.org/0000-0003-0470-5318"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"E. Miranda","raw_affiliation_strings":["[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]"],"affiliations":[{"raw_affiliation_string":"[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]","institution_ids":["https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049888413","display_name":"Takamasa Kawanago","orcid":"https://orcid.org/0000-0001-5323-7085"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kawanago","raw_affiliation_strings":["Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007637720","display_name":"Kuniyuki Kakushima","orcid":"https://orcid.org/0000-0002-8527-1402"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Kakushima","raw_affiliation_strings":["Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059665104","display_name":"J. Su\u00f1\u00e9","orcid":"https://orcid.org/0000-0003-0108-4907"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"J. Su\u00f1\u00e9","raw_affiliation_strings":["[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]"],"affiliations":[{"raw_affiliation_string":"[Departament d\u2019Enginyer\u00eda Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain]","institution_ids":["https://openalex.org/I123044942"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102754192","display_name":"Hiroshi Iwai","orcid":"https://orcid.org/0000-0001-5550-4140"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Iwai","raw_affiliation_strings":["Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Frontier Research Center. Tokyo Institute of Technology - Yokohama, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5041660505"],"corresponding_institution_ids":["https://openalex.org/I123044942"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.491,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.68062404,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"52","issue":"9-10","first_page":"1909","last_page":"1912"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.6690122485160828},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.6478691101074219},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6402144432067871},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6017942428588867},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5931987762451172},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5907137393951416},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5397456884384155},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.49866485595703125},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.49506083130836487},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4894641637802124},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"Gate voltage","score":0.4407579302787781},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42641934752464294},{"id":"https://openalex.org/keywords/gate-equivalent","display_name":"Gate equivalent","score":0.42030608654022217},{"id":"https://openalex.org/keywords/and-gate","display_name":"AND gate","score":0.41653335094451904},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4060705304145813},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.36924999952316284},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.3327786326408386},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.256718248128891},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19797664880752563}],"concepts":[{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6690122485160828},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.6478691101074219},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6402144432067871},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6017942428588867},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5931987762451172},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5907137393951416},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5397456884384155},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.49866485595703125},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49506083130836487},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4894641637802124},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.4407579302787781},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42641934752464294},{"id":"https://openalex.org/C60697091","wikidata":"https://www.wikidata.org/wiki/Q5527009","display_name":"Gate equivalent","level":5,"score":0.42030608654022217},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.41653335094451904},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4060705304145813},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36924999952316284},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.3327786326408386},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.256718248128891},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19797664880752563},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2012.06.012","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2012.06.012","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6800000071525574,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1990920575","https://openalex.org/W2042882368","https://openalex.org/W2068728923","https://openalex.org/W2079777886","https://openalex.org/W2086126257","https://openalex.org/W2102434753","https://openalex.org/W2124085954","https://openalex.org/W2151467153","https://openalex.org/W2156402799","https://openalex.org/W2168665055","https://openalex.org/W2561675875"],"related_works":["https://openalex.org/W2172826417","https://openalex.org/W2146589912","https://openalex.org/W2122149620","https://openalex.org/W2525927747","https://openalex.org/W2033934619","https://openalex.org/W4240357461","https://openalex.org/W2179420095","https://openalex.org/W2147014524","https://openalex.org/W3197208856","https://openalex.org/W2061907634"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}