{"id":"https://openalex.org/W2029083984","doi":"https://doi.org/10.1016/j.microrel.2007.07.020","title":"Modeling of the breakdown mechanisms for porous copper/low-k process flows","display_name":"Modeling of the breakdown mechanisms for porous copper/low-k process flows","publication_year":2007,"publication_date":"2007-08-27","ids":{"openalex":"https://openalex.org/W2029083984","doi":"https://doi.org/10.1016/j.microrel.2007.07.020","mag":"2029083984"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2007.07.020","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2007.07.020","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072864060","display_name":"Changsoo Hong","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Changsoo Hong","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30306, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30306, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032107826","display_name":"Linda Milor","orcid":"https://orcid.org/0000-0002-8244-4793"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Linda Milor","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30306, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30306, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5032107826"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.7139,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.72887518,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"47","issue":"9-11","first_page":"1478","last_page":"1482"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/porosity","display_name":"Porosity","score":0.8276735544204712},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.8127855062484741},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7485846281051636},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.636323094367981},{"id":"https://openalex.org/keywords/finite-element-method","display_name":"Finite element method","score":0.5664844512939453},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5112314224243164},{"id":"https://openalex.org/keywords/porous-medium","display_name":"Porous medium","score":0.5033811926841736},{"id":"https://openalex.org/keywords/copper","display_name":"Copper","score":0.45596522092819214},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.3547017574310303},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.30986499786376953},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.23146405816078186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16460496187210083},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14780786633491516},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.11077919602394104},{"id":"https://openalex.org/keywords/structural-engineering","display_name":"Structural engineering","score":0.09142708778381348}],"concepts":[{"id":"https://openalex.org/C6648577","wikidata":"https://www.wikidata.org/wiki/Q622669","display_name":"Porosity","level":2,"score":0.8276735544204712},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.8127855062484741},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7485846281051636},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.636323094367981},{"id":"https://openalex.org/C135628077","wikidata":"https://www.wikidata.org/wiki/Q220184","display_name":"Finite element method","level":2,"score":0.5664844512939453},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5112314224243164},{"id":"https://openalex.org/C105569014","wikidata":"https://www.wikidata.org/wiki/Q3271208","display_name":"Porous medium","level":3,"score":0.5033811926841736},{"id":"https://openalex.org/C544778455","wikidata":"https://www.wikidata.org/wiki/Q753","display_name":"Copper","level":2,"score":0.45596522092819214},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.3547017574310303},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.30986499786376953},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23146405816078186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16460496187210083},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14780786633491516},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.11077919602394104},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.09142708778381348},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2007.07.020","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2007.07.020","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1606722225","https://openalex.org/W1905852331","https://openalex.org/W1929042675","https://openalex.org/W1959011301","https://openalex.org/W2021909294","https://openalex.org/W2053117344","https://openalex.org/W2055470372","https://openalex.org/W2106453172","https://openalex.org/W2128100740","https://openalex.org/W2133992276","https://openalex.org/W2146542187","https://openalex.org/W2153816568","https://openalex.org/W2168130508","https://openalex.org/W2543798454","https://openalex.org/W4249213706"],"related_works":["https://openalex.org/W2393554192","https://openalex.org/W2359463116","https://openalex.org/W2362875760","https://openalex.org/W392422591","https://openalex.org/W1968527418","https://openalex.org/W2392518446","https://openalex.org/W2214518107","https://openalex.org/W2122637380","https://openalex.org/W2362127092","https://openalex.org/W2011733828"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}