{"id":"https://openalex.org/W2017831134","doi":"https://doi.org/10.1016/j.microrel.2005.10.006","title":"The post-damage behavior of a MOS tunnel emitter transistor","display_name":"The post-damage behavior of a MOS tunnel emitter transistor","publication_year":2006,"publication_date":"2006-01-05","ids":{"openalex":"https://openalex.org/W2017831134","doi":"https://doi.org/10.1016/j.microrel.2005.10.006","mag":"2017831134"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2005.10.006","doi":"https://doi.org/10.1016/j.microrel.2005.10.006","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2005.10.006","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028115879","display_name":"Stanislav E. Tyaginov","orcid":"https://orcid.org/0000-0002-5348-2096","observed_orcids":["https://orcid.org/0000-0002-5348-2096"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"S.E. Tyaginov","raw_affiliation_strings":["Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008733416","display_name":"Mikhail  I. Vexler","orcid":"https://orcid.org/0000-0002-9966-520X","observed_orcids":["https://orcid.org/0000-0002-9966-520X"]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"M.I. Vexler","raw_affiliation_strings":["Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I95568926"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064775071","display_name":"A. F. Shulekin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A.F. Shulekin","raw_affiliation_strings":["Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I95568926"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056941218","display_name":"Igor V. Grekhov","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1313323035","display_name":"Russian Academy of Sciences","ror":"https://ror.org/05qrfxd25","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035"]},{"id":"https://openalex.org/I95568926","display_name":"Ioffe Institute","ror":"https://ror.org/05dkdaa55","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096333","https://openalex.org/I95568926"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"I.V. Grekhov","raw_affiliation_strings":["Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya Street 26, 194021 St.-Petersburg, Russian Federation","institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I95568926"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5028115879"],"corresponding_institution_ids":["https://openalex.org/I1313323035","https://openalex.org/I95568926"],"apc_list":{"value":2280,"currency":"USD","value_usd":2280},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.1689915,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"46","issue":"7","first_page":"1035","last_page":"1041"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9258000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9258000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.016200000420212746,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.013399999588727951,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/oxide-damage","display_name":"oxide damage","score":0.8209999799728394},{"id":"https://openalex.org/keywords/soft-breakdown","display_name":"soft breakdown","score":0.7490000128746033},{"id":"https://openalex.org/keywords/bistability","display_name":"bistability","score":0.7319999933242798}],"concepts":[{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.8037668466567993},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7665418982505798},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6504011154174805},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.59903484582901},{"id":"https://openalex.org/C97292510","wikidata":"https://www.wikidata.org/wiki/Q2304620","display_name":"Bistability","level":2,"score":0.5021383762359619},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4872216284275055},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.45144814252853394},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.4461376667022705},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3587636947631836},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21323350071907043},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20001095533370972},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1364942491054535},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06352695822715759},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2005.10.006","doi":"https://doi.org/10.1016/j.microrel.2005.10.006","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2005.10.006","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320311239","display_name":"Russian Science Support Foundation","ror":"https://ror.org/005t0n560"},{"id":"https://openalex.org/F4320321079","display_name":"Russian Foundation for Basic Research","ror":"https://ror.org/02mh1ke95"},{"id":"https://openalex.org/F4320324099","display_name":"Russian Science Foundation","ror":"https://ror.org/03y2gwe85"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1975603152","https://openalex.org/W1978128599","https://openalex.org/W1978438859","https://openalex.org/W1986530300","https://openalex.org/W1996541557","https://openalex.org/W1999436167","https://openalex.org/W2008476021","https://openalex.org/W2020337824","https://openalex.org/W2021115425","https://openalex.org/W2021118131","https://openalex.org/W2021364085","https://openalex.org/W2061965709","https://openalex.org/W2092990584","https://openalex.org/W2153816568","https://openalex.org/W2624183933"],"related_works":["https://openalex.org/W4224217224","https://openalex.org/W3118640947","https://openalex.org/W4388308731","https://openalex.org/W2042003698","https://openalex.org/W1964519618","https://openalex.org/W1969697984","https://openalex.org/W3048730783","https://openalex.org/W1992416820","https://openalex.org/W3094197880","https://openalex.org/W2183786486"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2025-10-10T00:00:00"}