{"id":"https://openalex.org/W2003444789","doi":"https://doi.org/10.1016/j.microrel.2004.11.049","title":"Reverse short channel effects in high-k gated nMOSFETs","display_name":"Reverse short channel effects in high-k gated nMOSFETs","publication_year":2005,"publication_date":"2005-01-25","ids":{"openalex":"https://openalex.org/W2003444789","doi":"https://doi.org/10.1016/j.microrel.2004.11.049","mag":"2003444789"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2004.11.049","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.11.049","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069154656","display_name":"Jin\u2010Ping Han","orcid":"https://orcid.org/0000-0002-7011-6645"},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"J.-P. Han","raw_affiliation_strings":["National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034148512","display_name":"Sang\u2010Mo Koo","orcid":"https://orcid.org/0000-0002-9827-9219"},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.M. Koo","raw_affiliation_strings":["National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049480520","display_name":"Eric M. Vogel","orcid":"https://orcid.org/0000-0002-6110-1361"},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E.M. Vogel","raw_affiliation_strings":["National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103523380","display_name":"E. P. Gusev","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E.P. Gusev","raw_affiliation_strings":["IBM, T.J. Watson Research Center, Yorktown Heights, NY, United States","IBM T. J. Watson Research Center, Yorktown Heights,,,,NY,United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, T.J. Watson Research Center, Yorktown Heights, NY, United States","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights,,,,NY,United States","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080520477","display_name":"C. D\u2019Emic","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. D\u2019Emic","raw_affiliation_strings":["IBM, T.J. Watson Research Center, Yorktown Heights, NY, United States","IBM T. J. Watson Research Center, Yorktown Heights,,,,NY,United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, T.J. Watson Research Center, Yorktown Heights, NY, United States","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights,,,,NY,United States","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077905426","display_name":"Curt A. Richter","orcid":"https://orcid.org/0000-0003-4510-1465"},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.A. Richter","raw_affiliation_strings":["National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044786447","display_name":"John S. Suehle","orcid":null},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.S. Suehle","raw_affiliation_strings":["National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States","institution_ids":["https://openalex.org/I1321296531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5069154656"],"corresponding_institution_ids":["https://openalex.org/I1321296531"],"apc_list":{"value":2280,"currency":"USD","value_usd":2280},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08721955,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"45","issue":"5-6","first_page":"783","last_page":"785"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6846005916595459},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.6364506483078003},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.6080698370933533},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5437594056129456},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.5290091633796692},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5126187205314636},{"id":"https://openalex.org/keywords/reverse-short-channel-effect","display_name":"Reverse short-channel effect","score":0.5072274208068848},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.49764326214790344},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4921111464500427},{"id":"https://openalex.org/keywords/short-channel-effect","display_name":"Short-channel effect","score":0.4616166055202484},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.45441707968711853},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4144544303417206},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.34956851601600647},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3391057252883911},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3311127722263336},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12589290738105774},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10789981484413147},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08103778958320618},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06436026096343994}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6846005916595459},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.6364506483078003},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6080698370933533},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5437594056129456},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5290091633796692},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5126187205314636},{"id":"https://openalex.org/C33556034","wikidata":"https://www.wikidata.org/wiki/Q7318266","display_name":"Reverse short-channel effect","level":5,"score":0.5072274208068848},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49764326214790344},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4921111464500427},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.4616166055202484},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.45441707968711853},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4144544303417206},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34956851601600647},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3391057252883911},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3311127722263336},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12589290738105774},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10789981484413147},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08103778958320618},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06436026096343994},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2004.11.049","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.11.049","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"display_name":"Clean water and sanitation","id":"https://metadata.un.org/sdg/6"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332178","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2001063008","https://openalex.org/W2049889949","https://openalex.org/W2057486448","https://openalex.org/W2138338335","https://openalex.org/W2186829923"],"related_works":["https://openalex.org/W2124907403","https://openalex.org/W2049186354","https://openalex.org/W1968280774","https://openalex.org/W2033651357","https://openalex.org/W1835724189","https://openalex.org/W2362030326","https://openalex.org/W2042881279","https://openalex.org/W2153770261","https://openalex.org/W2167611023","https://openalex.org/W2077205329"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-08-27T14:10:00.468798","created_date":"2025-10-10T00:00:00"}