{"id":"https://openalex.org/W7165545398","doi":"https://doi.org/10.1016/j.mejo.2026.107332","title":"A novel SOI LDMOS with multi-dimensional electron accumulation for ultra-low ON-resistance","display_name":"A novel SOI LDMOS with multi-dimensional electron accumulation for ultra-low ON-resistance","publication_year":2026,"publication_date":"2026-06-22","ids":{"openalex":"https://openalex.org/W7165545398","doi":"https://doi.org/10.1016/j.mejo.2026.107332"},"language":"en","primary_location":{"id":"doi:10.1016/j.mejo.2026.107332","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2026.107332","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008768337","display_name":"Wenshu Luo","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wenshu Luo","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101568691","display_name":"Weizhong Chen","orcid":"https://orcid.org/0000-0001-8431-8988"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Weizhong Chen","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5139111693","display_name":"Wei Li","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wei Li","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5139070045","display_name":"Li Wan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Li Wan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102871313","display_name":"Haifeng Qin","orcid":"https://orcid.org/0000-0002-1921-8742"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haifeng Qin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027687491","display_name":"Hongsheng Zhang","orcid":"https://orcid.org/0000-0003-1636-8208"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hongsheng Zhang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5139078608","display_name":"Haishi Wang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haishi Wang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.75943535,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"175","issue":null,"first_page":"107332","last_page":"107332"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.5498999953269958,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.5498999953269958,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.19840000569820404,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.039900001138448715,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7293000221252441},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.6844000220298767},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.43299999833106995},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.33480000495910645},{"id":"https://openalex.org/keywords/electron-beam-lithography","display_name":"Electron-beam lithography","score":0.28870001435279846}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7293000221252441},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7125999927520752},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.6844000220298767},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6500999927520752},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.43299999833106995},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.33480000495910645},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30309998989105225},{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.28870001435279846},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.260699987411499},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24089999496936798}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mejo.2026.107332","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2026.107332","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W2072155156","https://openalex.org/W2103947167","https://openalex.org/W2134576252","https://openalex.org/W2135818056","https://openalex.org/W2150007983","https://openalex.org/W2159961487","https://openalex.org/W2309032895","https://openalex.org/W2610753032","https://openalex.org/W2919210378","https://openalex.org/W2946827800","https://openalex.org/W3216718437","https://openalex.org/W4213108883","https://openalex.org/W4295125727","https://openalex.org/W4378804092","https://openalex.org/W4388624529","https://openalex.org/W4389169635","https://openalex.org/W4389610443","https://openalex.org/W4400387246","https://openalex.org/W7084128172"],"related_works":[],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-06-26T06:17:10.115597","created_date":"2026-06-23T00:00:00"}