{"id":"https://openalex.org/W7133546293","doi":"https://doi.org/10.1016/j.mejo.2026.107146","title":"A buffer layer based hardening strategy for SEB mitigation in high-voltage MOSFETs for space applications","display_name":"A buffer layer based hardening strategy for SEB mitigation in high-voltage MOSFETs for space applications","publication_year":2026,"publication_date":"2026-03-05","ids":{"openalex":"https://openalex.org/W7133546293","doi":"https://doi.org/10.1016/j.mejo.2026.107146"},"language":"en","primary_location":{"id":"doi:10.1016/j.mejo.2026.107146","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2026.107146","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5128044465","display_name":"Yanfei Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210094137","display_name":"Beijing Zhongke Science and Technology (China)","ror":"https://ror.org/00qy2fm62","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210094137"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yanfei Zhang","raw_affiliation_strings":["Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China","Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China","institution_ids":["https://openalex.org/I4210094137"]},{"raw_affiliation_string":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5128091414","display_name":"Xueqin Gong","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094137","display_name":"Beijing Zhongke Science and Technology (China)","ror":"https://ror.org/00qy2fm62","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210094137"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueqin Gong","raw_affiliation_strings":["Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China","institution_ids":["https://openalex.org/I4210094137"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112137891","display_name":"Ge Zhao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094137","display_name":"Beijing Zhongke Science and Technology (China)","ror":"https://ror.org/00qy2fm62","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210094137"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ge Zhao","raw_affiliation_strings":["Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China","institution_ids":["https://openalex.org/I4210094137"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5128100051","display_name":"Xiaowu Cai","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaowu Cai","raw_affiliation_strings":["Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China","University of Chinese Academy of Sciences, Beijing 100049, China"],"raw_orcid":"https://orcid.org/0000-0001-6855-776X","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]},{"raw_affiliation_string":"University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I4210165038"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5128100994","display_name":"Mengxin Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094137","display_name":"Beijing Zhongke Science and Technology (China)","ror":"https://ror.org/00qy2fm62","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210094137"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mengxin Liu","raw_affiliation_strings":["Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Zhongke Newmicrot Technology Co. LTD, Beijing 100012, China","institution_ids":["https://openalex.org/I4210094137"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5128044465"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210094137","https://openalex.org/I4210119392","https://openalex.org/I4210165038"],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.4602314,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"173","issue":null,"first_page":"107146","last_page":"107146"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.664900004863739,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.664900004863739,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.10980000346899033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.10970000177621841,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/buffer","display_name":"Buffer (optical fiber)","score":0.805899977684021},{"id":"https://openalex.org/keywords/hardening","display_name":"Hardening (computing)","score":0.5371000170707703},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.49709999561309814},{"id":"https://openalex.org/keywords/space","display_name":"Space (punctuation)","score":0.42170000076293945},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.39879998564720154}],"concepts":[{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.805899977684021},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7328000068664551},{"id":"https://openalex.org/C44255700","wikidata":"https://www.wikidata.org/wiki/Q978423","display_name":"Hardening (computing)","level":3,"score":0.5371000170707703},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49799999594688416},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.49709999561309814},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46399998664855957},{"id":"https://openalex.org/C2778572836","wikidata":"https://www.wikidata.org/wiki/Q380933","display_name":"Space (punctuation)","level":2,"score":0.42170000076293945},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.39879998564720154},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2994999885559082},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.27630001306533813},{"id":"https://openalex.org/C2988672794","wikidata":"https://www.wikidata.org/wiki/Q11475","display_name":"Free space","level":2,"score":0.2741999924182892},{"id":"https://openalex.org/C77304879","wikidata":"https://www.wikidata.org/wiki/Q211485","display_name":"Space technology","level":2,"score":0.2615000009536743},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.25769999623298645}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mejo.2026.107146","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2026.107146","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W2009194678","https://openalex.org/W2046698147","https://openalex.org/W2085784120","https://openalex.org/W2095993155","https://openalex.org/W2131520192","https://openalex.org/W2134569487","https://openalex.org/W2148482442","https://openalex.org/W2148681438","https://openalex.org/W2156637233","https://openalex.org/W2167966226","https://openalex.org/W2588561742","https://openalex.org/W2945833644","https://openalex.org/W3045996512","https://openalex.org/W3125693319","https://openalex.org/W4241070446","https://openalex.org/W4384008012","https://openalex.org/W4392706224","https://openalex.org/W4400188885","https://openalex.org/W4409494623","https://openalex.org/W4410886933"],"related_works":[],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2026-03-05T00:00:00"}