{"id":"https://openalex.org/W2186644828","doi":"https://doi.org/10.1016/j.mejo.2015.11.001","title":"BSIM4 parameter extraction for tri-gate Si nanowire transistors","display_name":"BSIM4 parameter extraction for tri-gate Si nanowire transistors","publication_year":2015,"publication_date":"2015-12-01","ids":{"openalex":"https://openalex.org/W2186644828","doi":"https://doi.org/10.1016/j.mejo.2015.11.001","mag":"2186644828"},"language":"fr","primary_location":{"id":"doi:10.1016/j.mejo.2015.11.001","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2015.11.001","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057948807","display_name":"Chika Tanaka","orcid":"https://orcid.org/0000-0001-5370-4747"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Chika Tanaka","raw_affiliation_strings":["Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan"],"raw_orcid":"https://orcid.org/0000-0001-5370-4747","affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087391821","display_name":"Masumi Saitoh","orcid":"https://orcid.org/0000-0001-6469-7992"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masumi Saitoh","raw_affiliation_strings":["Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110686776","display_name":"Kensuke Ota","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kensuke Ota","raw_affiliation_strings":["Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102813167","display_name":"Takayuki Ishikawa","orcid":"https://orcid.org/0000-0002-4356-4039"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takayuki Ishikawa","raw_affiliation_strings":["Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108488443","display_name":"Toshinori Numata","orcid":"https://orcid.org/0009-0006-3351-3816"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshinori Numata","raw_affiliation_strings":["Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation 1, Komukai-Toshiba-Cho, Saiwaiku, Kawasaki, Kanagwa 212-8582, Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5057948807"],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08574785,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"47","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.8027126789093018},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6904522776603699},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6578997373580933},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6266167163848877},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5714375376701355},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.5625728964805603},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5183973908424377},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.5156921148300171},{"id":"https://openalex.org/keywords/silicon-nanowires","display_name":"Silicon nanowires","score":0.5001506805419922},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.43674522638320923},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43313831090927124},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.43191713094711304},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2647998332977295},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22758767008781433},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1754418909549713},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07071098685264587},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.07018101215362549}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.8027126789093018},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6904522776603699},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6578997373580933},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6266167163848877},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5714375376701355},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5625728964805603},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5183973908424377},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.5156921148300171},{"id":"https://openalex.org/C2986665194","wikidata":"https://www.wikidata.org/wiki/Q28324872","display_name":"Silicon nanowires","level":3,"score":0.5001506805419922},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.43674522638320923},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43313831090927124},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.43191713094711304},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2647998332977295},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22758767008781433},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1754418909549713},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07071098685264587},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07018101215362549},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mejo.2015.11.001","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2015.11.001","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.44999998807907104,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1966335535","https://openalex.org/W1979588396","https://openalex.org/W2015873494","https://openalex.org/W2038694080","https://openalex.org/W2067826110","https://openalex.org/W2119167494","https://openalex.org/W2130149296","https://openalex.org/W2132588722","https://openalex.org/W2172215492"],"related_works":["https://openalex.org/W2274633165","https://openalex.org/W4386066304","https://openalex.org/W4206587306","https://openalex.org/W1972693794","https://openalex.org/W3126421364","https://openalex.org/W2527554696","https://openalex.org/W3135452629","https://openalex.org/W2157299823","https://openalex.org/W2380325610","https://openalex.org/W2887760122"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}