{"id":"https://openalex.org/W1981241542","doi":"https://doi.org/10.1016/j.mejo.2006.03.010","title":"Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50 nm double gate devices","display_name":"Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50 nm double gate devices","publication_year":2006,"publication_date":"2006-06-15","ids":{"openalex":"https://openalex.org/W1981241542","doi":"https://doi.org/10.1016/j.mejo.2006.03.010","mag":"1981241542"},"language":"en","primary_location":{"id":"doi:10.1016/j.mejo.2006.03.010","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2006.03.010","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103714530","display_name":"Saibal Mukhopadhyay","orcid":null},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Saibal Mukhopadhyay","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, Mail Box #314, 1285 EE Building, West Lafayette, IN 47907-1285, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, Mail Box #314, 1285 EE Building, West Lafayette, IN 47907-1285, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102853887","display_name":"Keunwoo Kim","orcid":"https://orcid.org/0000-0003-1083-0385"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Keunwoo Kim","raw_affiliation_strings":["IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]"],"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","institution_ids":[]},{"raw_affiliation_string":"[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003219699","display_name":"Jae\u2010Joon Kim","orcid":"https://orcid.org/0000-0001-5175-8258"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jae-Joon Kim","raw_affiliation_strings":["IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]"],"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","institution_ids":[]},{"raw_affiliation_string":"[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113692760","display_name":"Shih-Hsien Lo","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shih-Hsien Lo","raw_affiliation_strings":["IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]"],"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","institution_ids":[]},{"raw_affiliation_string":"[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105554115","display_name":"Rajiv Joshi","orcid":"https://orcid.org/0009-0007-7486-1531"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rajiv V. Joshi","raw_affiliation_strings":["IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]"],"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","institution_ids":[]},{"raw_affiliation_string":"[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111956726","display_name":"Ching-Te Chuang","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ching-Te Chuang","raw_affiliation_strings":["IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]"],"affiliations":[{"raw_affiliation_string":"IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA","institution_ids":[]},{"raw_affiliation_string":"[IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031161187","display_name":"Kaushik Roy","orcid":"https://orcid.org/0009-0002-3375-2877"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaushik Roy","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Purdue University, Mail Box #314, 1285 EE Building, West Lafayette, IN 47907-1285, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Purdue University, Mail Box #314, 1285 EE Building, West Lafayette, IN 47907-1285, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5103714530"],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":{"value":2370,"currency":"USD","value_usd":2370},"apc_paid":null,"fwci":1.1458,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.78259268,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"38","issue":"8-9","first_page":"931","last_page":"941"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.6446311473846436},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6413922905921936},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6366544961929321},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6114898324012756},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.6072033047676086},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6035704612731934},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.557189404964447},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.5489084720611572},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5095911026000977},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.49831581115722656},{"id":"https://openalex.org/keywords/gate-equivalent","display_name":"Gate equivalent","score":0.4272088408470154},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36614054441452026},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3284206986427307},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20821380615234375},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12901920080184937}],"concepts":[{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.6446311473846436},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6413922905921936},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6366544961929321},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6114898324012756},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6072033047676086},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6035704612731934},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.557189404964447},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.5489084720611572},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5095911026000977},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.49831581115722656},{"id":"https://openalex.org/C60697091","wikidata":"https://www.wikidata.org/wiki/Q5527009","display_name":"Gate equivalent","level":5,"score":0.4272088408470154},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36614054441452026},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3284206986427307},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20821380615234375},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12901920080184937},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mejo.2006.03.010","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mejo.2006.03.010","pdf_url":null,"source":{"id":"https://openalex.org/S98831239","display_name":"Microelectronics Journal","issn_l":"1879-2391","issn":["1879-2391"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Journal","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W78620843","https://openalex.org/W1489111899","https://openalex.org/W1489322347","https://openalex.org/W1968758278","https://openalex.org/W1983116185","https://openalex.org/W2029869373","https://openalex.org/W2043399112","https://openalex.org/W2059775434","https://openalex.org/W2070871477","https://openalex.org/W2106469926","https://openalex.org/W2125904563","https://openalex.org/W2141096523","https://openalex.org/W2151947633","https://openalex.org/W2155595876","https://openalex.org/W2165081214","https://openalex.org/W2169713500","https://openalex.org/W2536956513","https://openalex.org/W6629416933","https://openalex.org/W6642437333"],"related_works":["https://openalex.org/W2539595190","https://openalex.org/W2099624314","https://openalex.org/W2106473374","https://openalex.org/W3160961382","https://openalex.org/W2172826417","https://openalex.org/W4229016249","https://openalex.org/W2136657530","https://openalex.org/W3023100830","https://openalex.org/W2335244518","https://openalex.org/W3197208856"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}