{"id":"https://openalex.org/W7165482517","doi":"https://doi.org/10.1016/j.displa.2026.103586","title":"Model Implementations and analysis of MIS-gated GaN light emitting transistor","display_name":"Model Implementations and analysis of MIS-gated GaN light emitting transistor","publication_year":2026,"publication_date":"2026-06-21","ids":{"openalex":"https://openalex.org/W7165482517","doi":"https://doi.org/10.1016/j.displa.2026.103586"},"language":"en","primary_location":{"id":"doi:10.1016/j.displa.2026.103586","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.displa.2026.103586","pdf_url":null,"source":{"id":"https://openalex.org/S191329154","display_name":"Displays","issn_l":"0141-9382","issn":["0141-9382","1872-7387"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Displays","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5139044416","display_name":"Jae Hun Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Hun Kim","raw_affiliation_strings":["Department of Electrical and Electronic Engineering Department, Yonsei University, 50 Yonsei-ro, Seoul 03722, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering Department, Yonsei University, 50 Yonsei-ro, Seoul 03722, the Republic of Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048577461","display_name":"Ilgu Yun","orcid":"https://orcid.org/0000-0003-1272-6768"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Ilgu Yun","raw_affiliation_strings":["Department of Electrical and Electronic Engineering Department, Yonsei University, 50 Yonsei-ro, Seoul 03722, the Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0003-1272-6768","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering Department, Yonsei University, 50 Yonsei-ro, Seoul 03722, the Republic of Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5048577461"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":{"value":2470,"currency":"USD","value_usd":2470},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.63652024,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"95","issue":null,"first_page":"103586","last_page":"103586"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.90829998254776,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.90829998254776,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.029500000178813934,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.011099999770522118,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.628600001335144},{"id":"https://openalex.org/keywords/light-emitting-diode","display_name":"Light-emitting diode","score":0.4124000072479248},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.39879998564720154},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.3409999907016754},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.3246999979019165}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7700999975204468},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6956999897956848},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.628600001335144},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41780000925064087},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.4124000072479248},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.39879998564720154},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.3409999907016754},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.3246999979019165},{"id":"https://openalex.org/C26713055","wikidata":"https://www.wikidata.org/wiki/Q245962","display_name":"Implementation","level":2,"score":0.2879999876022339},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2856999933719635},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.26669999957084656},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2554999887943268},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.2524000108242035}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.displa.2026.103586","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.displa.2026.103586","pdf_url":null,"source":{"id":"https://openalex.org/S191329154","display_name":"Displays","issn_l":"0141-9382","issn":["0141-9382","1872-7387"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Displays","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7759853005409241,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G3218937347","display_name":null,"funder_award_id":"C2022006782","funder_id":"https://openalex.org/F4320322382","funder_display_name":"LG Display"}],"funders":[{"id":"https://openalex.org/F4320321314","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96"},{"id":"https://openalex.org/F4320322382","display_name":"LG Display","ror":"https://ror.org/03ddh2c27"},{"id":"https://openalex.org/F4320336052","display_name":"Institute of BioMed-IT, Energy-IT and Smart-IT Technology (Best), Yonsei University","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1509632174","https://openalex.org/W1976097461","https://openalex.org/W2002592842","https://openalex.org/W2103020301","https://openalex.org/W2137398856","https://openalex.org/W2138007032","https://openalex.org/W2334064774","https://openalex.org/W2497616740","https://openalex.org/W2773606383","https://openalex.org/W2912616180","https://openalex.org/W2990924853","https://openalex.org/W3044370086","https://openalex.org/W3107770449","https://openalex.org/W3119943251","https://openalex.org/W3143962075","https://openalex.org/W3201233519","https://openalex.org/W3215784547","https://openalex.org/W4256436207","https://openalex.org/W4282046571","https://openalex.org/W4298121569","https://openalex.org/W4311741793","https://openalex.org/W4378804831","https://openalex.org/W4387587510","https://openalex.org/W4399176259","https://openalex.org/W4402210314","https://openalex.org/W4403973207"],"related_works":[],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-08-13T07:04:57.449891","created_date":"2026-06-22T00:00:00"}