{"id":"https://openalex.org/W2778708031","doi":"https://doi.org/10.1007/978-981-10-7470-7_39","title":"Low Write Energy STT-MRAM Cell Using 2T- Hybrid Tunnel FETs Exploiting the Steep Slope and Ambipolar Characteristics","display_name":"Low Write Energy STT-MRAM Cell Using 2T- Hybrid Tunnel FETs Exploiting the Steep Slope and Ambipolar Characteristics","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W2778708031","doi":"https://doi.org/10.1007/978-981-10-7470-7_39","mag":"2778708031"},"language":"en","primary_location":{"id":"doi:10.1007/978-981-10-7470-7_39","is_oa":false,"landing_page_url":"https://doi.org/10.1007/978-981-10-7470-7_39","pdf_url":null,"source":{"id":"https://openalex.org/S2764900261","display_name":"Communications in computer and information science","issn_l":"1865-0929","issn":["1865-0929","1865-0937"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Communications in Computer and Information Science","raw_type":"book-chapter"},"type":"book-chapter","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064245107","display_name":"Y. Sudha Vani","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Y. Sudha Vani","raw_affiliation_strings":["Department of Electronics and Communication Engineering, V.F.S.T.R University, Vadlamudi, Guntur, 522213, Andhra Pradesh, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, V.F.S.T.R University, Vadlamudi, Guntur, 522213, Andhra Pradesh, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108613727","display_name":"N. Usha Rani","orcid":"https://orcid.org/0009-0000-5361-9497"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Usha Rani","raw_affiliation_strings":["Department of Electronics and Communication Engineering, V.F.S.T.R University, Vadlamudi, Guntur, 522213, Andhra Pradesh, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, V.F.S.T.R University, Vadlamudi, Guntur, 522213, Andhra Pradesh, India","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086107411","display_name":"Ramesh Vaddi","orcid":"https://orcid.org/0000-0003-3158-4013"},"institutions":[{"id":"https://openalex.org/I188963388","display_name":"International Institute of Information Technology","ror":"https://ror.org/02dernx73","country_code":"IN","type":"education","lineage":["https://openalex.org/I188963388"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ramesh Vaddi","raw_affiliation_strings":["Nano Scale Integrated Circuits and Systems for Self-Powered IoT Laboratory, DSPM International Institute of Information Technology, Naya Raipur, 493661, Chattishgarh, India"],"affiliations":[{"raw_affiliation_string":"Nano Scale Integrated Circuits and Systems for Self-Powered IoT Laboratory, DSPM International Institute of Information Technology, Naya Raipur, 493661, Chattishgarh, India","institution_ids":["https://openalex.org/I188963388"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5064245107"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.3003,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.85605394,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"398","last_page":"405"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.9391230344772339},{"id":"https://openalex.org/keywords/ambipolar-diffusion","display_name":"Ambipolar diffusion","score":0.7809882164001465},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.7290402054786682},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.5170581936836243},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4937926232814789},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4687756597995758},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.46283864974975586},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46241211891174316},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4336746037006378},{"id":"https://openalex.org/keywords/nanomagnet","display_name":"Nanomagnet","score":0.41851937770843506},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.41704797744750977},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"Tunnel field-effect transistor","score":0.41696077585220337},{"id":"https://openalex.org/keywords/racetrack-memory","display_name":"Racetrack memory","score":0.4131615161895752},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38649725914001465},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.2748340964317322},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.2721424102783203},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2629004418849945},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.25230395793914795},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.22031182050704956},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.19518327713012695},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1935315728187561},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.15973907709121704},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.15533816814422607},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15020716190338135},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.10746517777442932},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.08550706505775452}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.9391230344772339},{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.7809882164001465},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.7290402054786682},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.5170581936836243},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4937926232814789},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4687756597995758},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46283864974975586},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46241211891174316},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4336746037006378},{"id":"https://openalex.org/C131872197","wikidata":"https://www.wikidata.org/wiki/Q3870157","display_name":"Nanomagnet","level":4,"score":0.41851937770843506},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.41704797744750977},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.41696077585220337},{"id":"https://openalex.org/C43363307","wikidata":"https://www.wikidata.org/wiki/Q1651623","display_name":"Racetrack memory","level":5,"score":0.4131615161895752},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38649725914001465},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.2748340964317322},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.2721424102783203},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2629004418849945},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25230395793914795},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.22031182050704956},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.19518327713012695},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1935315728187561},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.15973907709121704},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.15533816814422607},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15020716190338135},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.10746517777442932},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.08550706505775452},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/978-981-10-7470-7_39","is_oa":false,"landing_page_url":"https://doi.org/10.1007/978-981-10-7470-7_39","pdf_url":null,"source":{"id":"https://openalex.org/S2764900261","display_name":"Communications in computer and information science","issn_l":"1865-0929","issn":["1865-0929","1865-0937"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Communications in Computer and Information Science","raw_type":"book-chapter"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320719","display_name":"Department of Science and Technology, Ministry of Science and Technology, India","ror":"https://ror.org/0101xrq71"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1531296029","https://openalex.org/W1974831841","https://openalex.org/W1988431200","https://openalex.org/W2017187423","https://openalex.org/W2040579068","https://openalex.org/W2048303158","https://openalex.org/W2056890666","https://openalex.org/W2057386187","https://openalex.org/W2058297834","https://openalex.org/W2070883474","https://openalex.org/W2079620260","https://openalex.org/W2087461437","https://openalex.org/W2099559178","https://openalex.org/W2210241002","https://openalex.org/W2277230396","https://openalex.org/W2280557500","https://openalex.org/W2303314981","https://openalex.org/W2498860800","https://openalex.org/W2559761086"],"related_works":["https://openalex.org/W2160372845","https://openalex.org/W1545438037","https://openalex.org/W1977755618","https://openalex.org/W2131964951","https://openalex.org/W2897770615","https://openalex.org/W3155602812","https://openalex.org/W4386429298","https://openalex.org/W4231059390","https://openalex.org/W2581356274","https://openalex.org/W2102209351"],"abstract_inverted_index":null,"counts_by_year":[{"year":2021,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}