{"id":"https://openalex.org/W4225832349","doi":"https://doi.org/10.1007/978-3-030-97124-3_16","title":"Application of Cascode GaN HEMT in LLC Soft Switching Converter","display_name":"Application of Cascode GaN HEMT in LLC Soft Switching Converter","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4225832349","doi":"https://doi.org/10.1007/978-3-030-97124-3_16"},"language":"en","primary_location":{"id":"doi:10.1007/978-3-030-97124-3_16","is_oa":false,"landing_page_url":"https://doi.org/10.1007/978-3-030-97124-3_16","pdf_url":null,"source":{"id":"https://openalex.org/S4393917809","display_name":"Lecture notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering","issn_l":"1867-8211","issn":["1867-8211","1867-822X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering","raw_type":"book-chapter"},"type":"book-chapter","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110852407","display_name":"Kaiyuan Qin","orcid":null},"institutions":[{"id":"https://openalex.org/I124841900","display_name":"Xuzhou University of Technology","ror":"https://ror.org/02315by94","country_code":"CN","type":"education","lineage":["https://openalex.org/I124841900"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Kaiyuan Qin","raw_affiliation_strings":["School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou, 221018, Jiangsu, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou, 221018, Jiangsu, China","institution_ids":["https://openalex.org/I124841900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078950116","display_name":"En Fang","orcid":"https://orcid.org/0000-0003-3123-825X"},"institutions":[{"id":"https://openalex.org/I124841900","display_name":"Xuzhou University of Technology","ror":"https://ror.org/02315by94","country_code":"CN","type":"education","lineage":["https://openalex.org/I124841900"]},{"id":"https://openalex.org/I4210105569","display_name":"Jiangsu Vocational Institute of Architectural Technology","ror":"https://ror.org/01d4y8v03","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210105569"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"En Fang","raw_affiliation_strings":["Jiangsu Key Construction Laboratory of Large Engineering Equipment Testing and Control Technology, Xuzhou, 221018, Jiangsu, China","School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou, 221018, Jiangsu, China"],"affiliations":[{"raw_affiliation_string":"Jiangsu Key Construction Laboratory of Large Engineering Equipment Testing and Control Technology, Xuzhou, 221018, Jiangsu, China","institution_ids":["https://openalex.org/I4210105569"]},{"raw_affiliation_string":"School of Electrical and Control Engineering, Xuzhou University of Technology, Xuzhou, 221018, Jiangsu, China","institution_ids":["https://openalex.org/I124841900"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100710886","display_name":"Yuanming Zhang","orcid":"https://orcid.org/0000-0001-6208-6469"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuan-ming Zhang","raw_affiliation_strings":["State Grid Suqian Power Supply Company, Suqian, 223800, Jiangsu, China"],"affiliations":[{"raw_affiliation_string":"State Grid Suqian Power Supply Company, Suqian, 223800, Jiangsu, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5110852407"],"corresponding_institution_ids":["https://openalex.org/I124841900"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07503828,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"178","last_page":"193"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.9416791200637817},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.732367753982544},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5953783988952637},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.585119903087616},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4765896499156952},{"id":"https://openalex.org/keywords/transformer","display_name":"Transformer","score":0.4210498332977295},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.42037373781204224},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4027886986732483},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4012583792209625},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38546502590179443},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3586848974227905},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3053497076034546},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28719547390937805},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14164036512374878},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.10330581665039062},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09798166155815125},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.08122700452804565}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.9416791200637817},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.732367753982544},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5953783988952637},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.585119903087616},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4765896499156952},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.4210498332977295},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.42037373781204224},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4027886986732483},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4012583792209625},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38546502590179443},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3586848974227905},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3053497076034546},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28719547390937805},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14164036512374878},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.10330581665039062},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09798166155815125},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08122700452804565},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/978-3-030-97124-3_16","is_oa":false,"landing_page_url":"https://doi.org/10.1007/978-3-030-97124-3_16","pdf_url":null,"source":{"id":"https://openalex.org/S4393917809","display_name":"Lecture notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering","issn_l":"1867-8211","issn":["1867-8211","1867-822X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering","raw_type":"book-chapter"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6899999976158142,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1893526099","https://openalex.org/W1990059284","https://openalex.org/W2028696212","https://openalex.org/W2039316783","https://openalex.org/W2120462245","https://openalex.org/W2123907965","https://openalex.org/W2130436058","https://openalex.org/W2321102242","https://openalex.org/W2509604305","https://openalex.org/W2556193728","https://openalex.org/W2556454765","https://openalex.org/W2768422641","https://openalex.org/W2953327508","https://openalex.org/W2979404779","https://openalex.org/W3051027185","https://openalex.org/W4229819987"],"related_works":["https://openalex.org/W2115067661","https://openalex.org/W2160601779","https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W2123907965","https://openalex.org/W2570299670","https://openalex.org/W4308644106"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}