{"id":"https://openalex.org/W4414571659","doi":"https://doi.org/10.1007/s11432-025-4483-1","title":"Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing","display_name":"Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing","publication_year":2025,"publication_date":"2025-09-23","ids":{"openalex":"https://openalex.org/W4414571659","doi":"https://doi.org/10.1007/s11432-025-4483-1"},"language":"en","primary_location":{"id":"doi:10.1007/s11432-025-4483-1","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-025-4483-1","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113427048","display_name":"Chaewon Youn","orcid":null},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chaewon Youn","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100647604","display_name":"Sungjun Kim","orcid":"https://orcid.org/0000-0002-9873-2474"},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungjun Kim","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5113427048"],"corresponding_institution_ids":["https://openalex.org/I205490536"],"apc_list":{"value":2390,"currency":"EUR","value_usd":2990},"apc_paid":null,"fwci":1.2505,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.82760206,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":"68","issue":"10","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.7882000207901001},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.7828999757766724},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.730400025844574},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.585099995136261},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.4740999937057495},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.47040000557899475},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.4049000144004822},{"id":"https://openalex.org/keywords/ferroelectric-capacitor","display_name":"Ferroelectric capacitor","score":0.4025999903678894}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8219000101089478},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.7882000207901001},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.7828999757766724},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.730400025844574},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7192000150680542},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.585099995136261},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4740999937057495},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.47040000557899475},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4049000144004822},{"id":"https://openalex.org/C189366214","wikidata":"https://www.wikidata.org/wiki/Q4103842","display_name":"Ferroelectric capacitor","level":4,"score":0.4025999903678894},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3756999969482422},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.36250001192092896},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3479999899864197},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3398999869823456},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.3131999969482422},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.3068999946117401},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.2953999936580658},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.2818000018596649},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.2766000032424927},{"id":"https://openalex.org/C546638069","wikidata":"https://www.wikidata.org/wiki/Q1119","display_name":"Hafnium","level":3,"score":0.27230000495910645},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.26460000872612},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.26330000162124634},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.25429999828338623},{"id":"https://openalex.org/C187937830","wikidata":"https://www.wikidata.org/wiki/Q175403","display_name":"Microelectronics","level":2,"score":0.2531999945640564},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.2500999867916107}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s11432-025-4483-1","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-025-4483-1","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":62,"referenced_works":["https://openalex.org/W1625170149","https://openalex.org/W1853470600","https://openalex.org/W1964479701","https://openalex.org/W1976902828","https://openalex.org/W1981966175","https://openalex.org/W1983011139","https://openalex.org/W2005135813","https://openalex.org/W2048853926","https://openalex.org/W2060501200","https://openalex.org/W2070828761","https://openalex.org/W2086370274","https://openalex.org/W2087307768","https://openalex.org/W2256898052","https://openalex.org/W2346962696","https://openalex.org/W2463092392","https://openalex.org/W2625900426","https://openalex.org/W2732144118","https://openalex.org/W2749019517","https://openalex.org/W2789517172","https://openalex.org/W2802654133","https://openalex.org/W2804080646","https://openalex.org/W2907225533","https://openalex.org/W2936721054","https://openalex.org/W2942341625","https://openalex.org/W2954594665","https://openalex.org/W2964484716","https://openalex.org/W2968562785","https://openalex.org/W2977345187","https://openalex.org/W2996650495","https://openalex.org/W2997854392","https://openalex.org/W2998675988","https://openalex.org/W3000624865","https://openalex.org/W3012465862","https://openalex.org/W3036392320","https://openalex.org/W3038639428","https://openalex.org/W3088963579","https://openalex.org/W3112317065","https://openalex.org/W3118229817","https://openalex.org/W3119070171","https://openalex.org/W3122511478","https://openalex.org/W3152993974","https://openalex.org/W3176774900","https://openalex.org/W3191070904","https://openalex.org/W3194337458","https://openalex.org/W3216276581","https://openalex.org/W4205171196","https://openalex.org/W4213250796","https://openalex.org/W4220807211","https://openalex.org/W4220942060","https://openalex.org/W4251347970","https://openalex.org/W4306194433","https://openalex.org/W4319843517","https://openalex.org/W4366396991","https://openalex.org/W4378895360","https://openalex.org/W4387802956","https://openalex.org/W4389221329","https://openalex.org/W4389721796","https://openalex.org/W4394992917","https://openalex.org/W4396857885","https://openalex.org/W4400797659","https://openalex.org/W4401124904","https://openalex.org/W4407979688"],"related_works":[],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}