{"id":"https://openalex.org/W4224834577","doi":"https://doi.org/10.1007/s11432-021-3283-5","title":"Physical investigation of subthreshold swing degradation behavior in negative capacitance FET","display_name":"Physical investigation of subthreshold swing degradation behavior in negative capacitance FET","publication_year":2022,"publication_date":"2022-04-21","ids":{"openalex":"https://openalex.org/W4224834577","doi":"https://doi.org/10.1007/s11432-021-3283-5"},"language":"en","primary_location":{"id":"doi:10.1007/s11432-021-3283-5","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-021-3283-5","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102502586","display_name":"Mengxuan Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Mengxuan Yang","raw_affiliation_strings":["Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017373294","display_name":"Qianqian Huang","orcid":"https://orcid.org/0000-0002-3714-8581"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qianqian Huang","raw_affiliation_strings":["Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100648001","display_name":"Kaifeng Wang","orcid":"https://orcid.org/0000-0002-5076-8304"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaifeng Wang","raw_affiliation_strings":["Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070519663","display_name":"Chang Su","orcid":"https://orcid.org/0000-0001-5053-7605"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chang Su","raw_affiliation_strings":["Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100334597","display_name":"Liang Chen","orcid":"https://orcid.org/0000-0002-2476-1440"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Chen","raw_affiliation_strings":["Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061018931","display_name":"Yangyuan Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yangyuan Wang","raw_affiliation_strings":["Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062886480","display_name":"Ru Huang","orcid":"https://orcid.org/0000-0002-8146-4821"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ru Huang","raw_affiliation_strings":["Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China"],"affiliations":[{"raw_affiliation_string":"Beijing Laboratory of Future IC Technology and Science, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5102502586"],"corresponding_institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"],"apc_list":{"value":2390,"currency":"EUR","value_usd":2990},"apc_paid":null,"fwci":1.2905,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.78717724,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"65","issue":"6","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7189700603485107},{"id":"https://openalex.org/keywords/negative-impedance-converter","display_name":"Negative impedance converter","score":0.7056736946105957},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6495774984359741},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5176811218261719},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4989159107208252},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.49463626742362976},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.477113276720047},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.44788098335266113},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4455926716327667},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44283202290534973},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.4275437593460083},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.41418737173080444},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37366509437561035},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16415119171142578},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11032772064208984},{"id":"https://openalex.org/keywords/voltage-source","display_name":"Voltage source","score":0.06530711054801941}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7189700603485107},{"id":"https://openalex.org/C7729237","wikidata":"https://www.wikidata.org/wiki/Q1724261","display_name":"Negative impedance converter","level":4,"score":0.7056736946105957},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6495774984359741},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5176811218261719},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4989159107208252},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.49463626742362976},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.477113276720047},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.44788098335266113},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4455926716327667},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44283202290534973},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.4275437593460083},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.41418737173080444},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37366509437561035},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16415119171142578},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11032772064208984},{"id":"https://openalex.org/C144655898","wikidata":"https://www.wikidata.org/wiki/Q1161128","display_name":"Voltage source","level":3,"score":0.06530711054801941},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s11432-021-3283-5","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-021-3283-5","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1585359540","https://openalex.org/W1976518187","https://openalex.org/W1982875408","https://openalex.org/W1984956029","https://openalex.org/W1996569310","https://openalex.org/W2009624223","https://openalex.org/W2032197740","https://openalex.org/W2039011822","https://openalex.org/W2040849300","https://openalex.org/W2291256907","https://openalex.org/W2334220755","https://openalex.org/W2547648855","https://openalex.org/W2584461032","https://openalex.org/W2734532847","https://openalex.org/W2773084460","https://openalex.org/W2886998316","https://openalex.org/W2896923229","https://openalex.org/W2912335586","https://openalex.org/W2956917017","https://openalex.org/W2980592408","https://openalex.org/W3004693881"],"related_works":["https://openalex.org/W2750534275","https://openalex.org/W2545133822","https://openalex.org/W2791897932","https://openalex.org/W2010066109","https://openalex.org/W2095374523","https://openalex.org/W2545707786","https://openalex.org/W2340131852","https://openalex.org/W2470478960","https://openalex.org/W1999741645","https://openalex.org/W2166758606"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}