{"id":"https://openalex.org/W2926255895","doi":"https://doi.org/10.1007/s11432-018-9659-0","title":"A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs","display_name":"A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs","publication_year":2019,"publication_date":"2019-03-28","ids":{"openalex":"https://openalex.org/W2926255895","doi":"https://doi.org/10.1007/s11432-018-9659-0","mag":"2926255895"},"language":"en","primary_location":{"id":"doi:10.1007/s11432-018-9659-0","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-018-9659-0","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080425608","display_name":"Minxi Cai","orcid":"https://orcid.org/0000-0001-5307-7341"},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Minxi Cai","raw_affiliation_strings":["School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China","School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China","institution_ids":["https://openalex.org/I90610280"]},{"raw_affiliation_string":"School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110877719","display_name":"Ruohe Yao","orcid":null},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Ruohe Yao","raw_affiliation_strings":["School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China","School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Information Engineering, South China University of Technology, Guangzhou, 510641, China","institution_ids":["https://openalex.org/I90610280"]},{"raw_affiliation_string":"School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China","institution_ids":["https://openalex.org/I90610280"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5110877719"],"corresponding_institution_ids":["https://openalex.org/I90610280"],"apc_list":{"value":2390,"currency":"EUR","value_usd":2990},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.02018505,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"62","issue":"6","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9860000014305115,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9768000245094299,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dual","display_name":"Dual (grammatical number)","score":0.7057834267616272},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6793386936187744},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.6104938387870789},{"id":"https://openalex.org/keywords/channel-length-modulation","display_name":"Channel length modulation","score":0.499345064163208},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"Drain-induced barrier lowering","score":0.4909113049507141},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4708634912967682},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.46924638748168945},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36737555265426636},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.331815242767334},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19883784651756287},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.196971595287323},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.14692601561546326},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13908296823501587},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13162416219711304}],"concepts":[{"id":"https://openalex.org/C2780980858","wikidata":"https://www.wikidata.org/wiki/Q110022","display_name":"Dual (grammatical number)","level":2,"score":0.7057834267616272},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6793386936187744},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.6104938387870789},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.499345064163208},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.4909113049507141},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4708634912967682},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.46924638748168945},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36737555265426636},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.331815242767334},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19883784651756287},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.196971595287323},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.14692601561546326},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13908296823501587},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13162416219711304},{"id":"https://openalex.org/C124952713","wikidata":"https://www.wikidata.org/wiki/Q8242","display_name":"Literature","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s11432-018-9659-0","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-018-9659-0","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7300000190734863,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1970683420","https://openalex.org/W2108597201","https://openalex.org/W2115548860","https://openalex.org/W2155601148","https://openalex.org/W2527354068","https://openalex.org/W2566098705","https://openalex.org/W2751107865","https://openalex.org/W3113047842"],"related_works":["https://openalex.org/W1938836414","https://openalex.org/W2136400454","https://openalex.org/W2080688857","https://openalex.org/W3081352656","https://openalex.org/W1835724189","https://openalex.org/W2545799744","https://openalex.org/W2088281110","https://openalex.org/W1608762732","https://openalex.org/W2018121445","https://openalex.org/W2953908791"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}