{"id":"https://openalex.org/W2768841347","doi":"https://doi.org/10.1007/s11432-017-9198-1","title":"High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels","display_name":"High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels","publication_year":2017,"publication_date":"2017-11-20","ids":{"openalex":"https://openalex.org/W2768841347","doi":"https://doi.org/10.1007/s11432-017-9198-1","mag":"2768841347"},"language":"en","primary_location":{"id":"doi:10.1007/s11432-017-9198-1","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-017-9198-1","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031673753","display_name":"Chao Yang","orcid":"https://orcid.org/0000-0003-0781-7227"},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chao Yang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006904369","display_name":"Xiaorong Luo","orcid":"https://orcid.org/0000-0001-5973-3258"},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaorong Luo","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021144944","display_name":"Siyu Deng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]},{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Siyu Deng","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101670873","display_name":"Peng Fu","orcid":"https://orcid.org/0000-0003-0430-5621"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fu Peng","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320398","display_name":"Bo Zhang","orcid":"https://orcid.org/0000-0003-1288-1549"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Zhang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5006904369"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"],"apc_list":{"value":2390,"currency":"EUR","value_usd":2990},"apc_paid":null,"fwci":0.2134,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.58676,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"61","issue":"6","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7859046459197998},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.635673999786377},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.6163756251335144},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5761218667030334},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.43820473551750183},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4219432473182678},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.4124104380607605},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3964793086051941},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15465745329856873},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1545974612236023},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.14245471358299255},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11316245794296265},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.06293711066246033}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7859046459197998},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.635673999786377},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6163756251335144},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5761218667030334},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.43820473551750183},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4219432473182678},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.4124104380607605},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3964793086051941},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15465745329856873},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1545974612236023},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14245471358299255},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11316245794296265},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06293711066246033},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s11432-017-9198-1","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-017-9198-1","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7200000286102295,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W352538250","https://openalex.org/W1915947102","https://openalex.org/W1968619242","https://openalex.org/W1976072495","https://openalex.org/W1989716345","https://openalex.org/W2009042116","https://openalex.org/W2034381613","https://openalex.org/W2074213077","https://openalex.org/W2075997516","https://openalex.org/W2081273037","https://openalex.org/W2082022477","https://openalex.org/W2091693891","https://openalex.org/W2108033831","https://openalex.org/W2114902077","https://openalex.org/W2128295750","https://openalex.org/W2131479949","https://openalex.org/W2153961385","https://openalex.org/W2158892965","https://openalex.org/W2165225505","https://openalex.org/W2256457021","https://openalex.org/W2259728253","https://openalex.org/W2276814997","https://openalex.org/W2346705705","https://openalex.org/W2476216449"],"related_works":["https://openalex.org/W2019611465","https://openalex.org/W3164615570","https://openalex.org/W3157611879","https://openalex.org/W2313980841","https://openalex.org/W1995567374","https://openalex.org/W2999649267","https://openalex.org/W1987893528","https://openalex.org/W2737838463","https://openalex.org/W2086753183","https://openalex.org/W1966273737"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}