{"id":"https://openalex.org/W3164867780","doi":"https://doi.org/10.1007/s11432-011-4223-x","title":"Phase change memory","display_name":"Phase change memory","publication_year":2011,"publication_date":"2011-05-01","ids":{"openalex":"https://openalex.org/W3164867780","doi":"https://doi.org/10.1007/s11432-011-4223-x","mag":"3164867780"},"language":"en","primary_location":{"id":"doi:10.1007/s11432-011-4223-x","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-011-4223-x","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100626667","display_name":"Jing Li","orcid":"https://orcid.org/0000-0001-5139-938X"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jing Li","raw_affiliation_strings":["IBM Research, T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research, T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110283478","display_name":"Chung Lam","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chung Lam","raw_affiliation_strings":["IBM Research, T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research, T.J. Watson Research Center, Yorktown Heights, New York, 10598, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100626667"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":{"value":2390,"currency":"EUR","value_usd":2990},"apc_paid":null,"fwci":0.3209,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.61048537,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"54","issue":"5","first_page":"1061","last_page":"1072"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.910811185836792},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.7072635293006897},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6714127063751221},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.5964421033859253},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.5275240540504456},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5111280083656311},{"id":"https://openalex.org/keywords/phase-change","display_name":"Phase change","score":0.5100978016853333},{"id":"https://openalex.org/keywords/phase-change-material","display_name":"Phase-change material","score":0.4975738823413849},{"id":"https://openalex.org/keywords/electrical-resistivity-and-conductivity","display_name":"Electrical resistivity and conductivity","score":0.4903838634490967},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4580302834510803},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.4214518368244171},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.4121987819671631},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.397983193397522},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.35686397552490234},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3064364492893219},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.26746368408203125},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14631816744804382},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13288620114326477},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08313107490539551},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.07441630959510803},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.06708505749702454}],"concepts":[{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.910811185836792},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.7072635293006897},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6714127063751221},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5964421033859253},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.5275240540504456},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5111280083656311},{"id":"https://openalex.org/C133256868","wikidata":"https://www.wikidata.org/wiki/Q7180940","display_name":"Phase change","level":2,"score":0.5100978016853333},{"id":"https://openalex.org/C2778119658","wikidata":"https://www.wikidata.org/wiki/Q1806889","display_name":"Phase-change material","level":3,"score":0.4975738823413849},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4903838634490967},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4580302834510803},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.4214518368244171},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.4121987819671631},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.397983193397522},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.35686397552490234},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3064364492893219},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.26746368408203125},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14631816744804382},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13288620114326477},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08313107490539551},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.07441630959510803},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.06708505749702454},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s11432-011-4223-x","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s11432-011-4223-x","pdf_url":null,"source":{"id":"https://openalex.org/S4210218743","display_name":"Science China Information Sciences","issn_l":"1674-733X","issn":["1674-733X","1869-1919"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319965","host_organization_name":"Springer Nature","host_organization_lineage":["https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Science China Information Sciences","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":54,"referenced_works":["https://openalex.org/W612619746","https://openalex.org/W1042992399","https://openalex.org/W1483176180","https://openalex.org/W1500829088","https://openalex.org/W1506711168","https://openalex.org/W1560665745","https://openalex.org/W1625518530","https://openalex.org/W1661646169","https://openalex.org/W1964056440","https://openalex.org/W1973203087","https://openalex.org/W1978632046","https://openalex.org/W1987201308","https://openalex.org/W1988549895","https://openalex.org/W1992476313","https://openalex.org/W1995655459","https://openalex.org/W2017650653","https://openalex.org/W2020718346","https://openalex.org/W2026804797","https://openalex.org/W2037747688","https://openalex.org/W2038957177","https://openalex.org/W2039694258","https://openalex.org/W2041610138","https://openalex.org/W2044793418","https://openalex.org/W2051220390","https://openalex.org/W2051783077","https://openalex.org/W2069422675","https://openalex.org/W2070339839","https://openalex.org/W2091727519","https://openalex.org/W2094043668","https://openalex.org/W2096020809","https://openalex.org/W2096621278","https://openalex.org/W2098645065","https://openalex.org/W2098669931","https://openalex.org/W2102086096","https://openalex.org/W2104687942","https://openalex.org/W2113512876","https://openalex.org/W2114639336","https://openalex.org/W2119171946","https://openalex.org/W2126830366","https://openalex.org/W2131997780","https://openalex.org/W2135847860","https://openalex.org/W2136683769","https://openalex.org/W2144603794","https://openalex.org/W2150417437","https://openalex.org/W2151316253","https://openalex.org/W2152106591","https://openalex.org/W2153910746","https://openalex.org/W2154091356","https://openalex.org/W2169049684","https://openalex.org/W2186829923","https://openalex.org/W2594670559","https://openalex.org/W3203992401","https://openalex.org/W4242317504","https://openalex.org/W6728795750"],"related_works":["https://openalex.org/W2110321764","https://openalex.org/W4283326582","https://openalex.org/W2104335563","https://openalex.org/W2171653118","https://openalex.org/W2114380004","https://openalex.org/W2478227886","https://openalex.org/W2274292368","https://openalex.org/W2158644812","https://openalex.org/W2784152635","https://openalex.org/W3099470245"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-19T15:47:20.252518","created_date":"2025-10-10T00:00:00"}