{"id":"https://openalex.org/W4408733972","doi":"https://doi.org/10.1007/s00034-025-03047-3","title":"Novel Charge Plasma Vertically Stacked Dopingless Nanosheet Field-Effect Transistor (DL-NSFET): Proposal and Extensive Analysis","display_name":"Novel Charge Plasma Vertically Stacked Dopingless Nanosheet Field-Effect Transistor (DL-NSFET): Proposal and Extensive Analysis","publication_year":2025,"publication_date":"2025-03-21","ids":{"openalex":"https://openalex.org/W4408733972","doi":"https://doi.org/10.1007/s00034-025-03047-3"},"language":"en","primary_location":{"id":"doi:10.1007/s00034-025-03047-3","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00034-025-03047-3","pdf_url":null,"source":{"id":"https://openalex.org/S20109229","display_name":"Circuits Systems and Signal Processing","issn_l":"0278-081X","issn":["0278-081X","1531-5878"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320186","host_organization_name":"Birkh\u00e4user","host_organization_lineage":["https://openalex.org/P4310320186","https://openalex.org/P4310319900"],"host_organization_lineage_names":["Birkh\u00e4user","Springer Science+Business Media"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Circuits, Systems, and Signal Processing","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101496067","display_name":"Abhishek Chauhan","orcid":"https://orcid.org/0000-0002-7780-3114"},"institutions":[{"id":"https://openalex.org/I70971781","display_name":"Dr. B. R. Ambedkar National Institute of Technology Jalandhar","ror":"https://ror.org/03xt0bg88","country_code":"IN","type":"education","lineage":["https://openalex.org/I70971781"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Abhishek Chauhan","raw_affiliation_strings":["Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Jalandhar, India"],"raw_orcid":"https://orcid.org/0000-0002-7780-3114","affiliations":[{"raw_affiliation_string":"Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Jalandhar, India","institution_ids":["https://openalex.org/I70971781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035286081","display_name":"Ashish Raman","orcid":"https://orcid.org/0000-0002-6720-373X"},"institutions":[{"id":"https://openalex.org/I70971781","display_name":"Dr. B. R. Ambedkar National Institute of Technology Jalandhar","ror":"https://ror.org/03xt0bg88","country_code":"IN","type":"education","lineage":["https://openalex.org/I70971781"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashish Raman","raw_affiliation_strings":["Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Jalandhar, India"],"raw_orcid":"https://orcid.org/0000-0002-6720-373X","affiliations":[{"raw_affiliation_string":"Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Jalandhar, India","institution_ids":["https://openalex.org/I70971781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101496067"],"corresponding_institution_ids":["https://openalex.org/I70971781"],"apc_list":null,"apc_paid":null,"fwci":2.6125,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.89166186,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":98},"biblio":{"volume":"45","issue":"1","first_page":"343","last_page":"363"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanosheet","display_name":"Nanosheet","score":0.8541709184646606},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.5671447515487671},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.5099126100540161},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5045005083084106},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4888097941875458},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.45355233550071716},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4178573489189148},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3316304683685303},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3128669857978821},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2948921024799347},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28742003440856934},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2390928566455841},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10106688737869263},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.0874965488910675}],"concepts":[{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.8541709184646606},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5671447515487671},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5099126100540161},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5045005083084106},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4888097941875458},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.45355233550071716},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4178573489189148},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3316304683685303},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3128669857978821},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2948921024799347},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28742003440856934},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2390928566455841},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10106688737869263},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0874965488910675}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s00034-025-03047-3","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00034-025-03047-3","pdf_url":null,"source":{"id":"https://openalex.org/S20109229","display_name":"Circuits Systems and Signal Processing","issn_l":"0278-081X","issn":["0278-081X","1531-5878"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320186","host_organization_name":"Birkh\u00e4user","host_organization_lineage":["https://openalex.org/P4310320186","https://openalex.org/P4310319900"],"host_organization_lineage_names":["Birkh\u00e4user","Springer Science+Business Media"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Circuits, Systems, and Signal Processing","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1752536969","https://openalex.org/W1968284496","https://openalex.org/W1980084011","https://openalex.org/W2023590790","https://openalex.org/W2051523162","https://openalex.org/W2051721756","https://openalex.org/W2113992184","https://openalex.org/W2116656110","https://openalex.org/W2119378720","https://openalex.org/W2129317092","https://openalex.org/W2132841962","https://openalex.org/W2134797611","https://openalex.org/W2144445803","https://openalex.org/W2145765216","https://openalex.org/W2343680682","https://openalex.org/W2588781650","https://openalex.org/W2740474361","https://openalex.org/W2744406216","https://openalex.org/W2754902844","https://openalex.org/W2892340050","https://openalex.org/W2900174623","https://openalex.org/W2945117791","https://openalex.org/W2995791901","https://openalex.org/W3047599718","https://openalex.org/W3081838769","https://openalex.org/W3174195390","https://openalex.org/W4210389905","https://openalex.org/W4210597301","https://openalex.org/W4214810801","https://openalex.org/W4220976555","https://openalex.org/W4285390750","https://openalex.org/W4293375780","https://openalex.org/W4297369887","https://openalex.org/W4323345895","https://openalex.org/W4376866842","https://openalex.org/W4377969771","https://openalex.org/W4391360735","https://openalex.org/W4391467969","https://openalex.org/W4393096198","https://openalex.org/W6601730711"],"related_works":["https://openalex.org/W3119082211","https://openalex.org/W3091852196","https://openalex.org/W4400260568","https://openalex.org/W2084951691","https://openalex.org/W4385690889","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W1976012112"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}