{"id":"https://openalex.org/W2032515130","doi":"https://doi.org/10.1002/ett.4460010410","title":"Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach","display_name":"Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach","publication_year":1990,"publication_date":"1990-07-01","ids":{"openalex":"https://openalex.org/W2032515130","doi":"https://doi.org/10.1002/ett.4460010410","mag":"2032515130"},"language":"en","primary_location":{"id":"doi:10.1002/ett.4460010410","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010410","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013980196","display_name":"Jocelyn Alamkan","orcid":null},"institutions":[{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Jocelyn Alamkan","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108166917","display_name":"H. Happy","orcid":"https://orcid.org/0000-0003-2065-8080"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Henri Happy","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011220704","display_name":"Y. Cordier","orcid":"https://orcid.org/0000-0003-3720-9409"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Yvon Cordier","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055132172","display_name":"A. Cappy","orcid":"https://orcid.org/0000-0002-1811-1054"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Alain Cappy","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS - Ba\u030at. P4 Universite\u0301 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS - B\u00e5t. P4 Universit\u00e9 des Sciences et Techniques de Lille Flandres Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5013980196"],"corresponding_institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I44563897"],"apc_list":null,"apc_paid":null,"fwci":0.9165,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.70813039,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":"4","first_page":"429","last_page":"432"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6364384889602661},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.587847888469696},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.532229483127594},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5300471782684326},{"id":"https://openalex.org/keywords/simple","display_name":"Simple (philosophy)","score":0.5052846074104309},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4542636275291443},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.4459574222564697},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36738598346710205},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25078484416007996},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.16380175948143005},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1580197513103485},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15612319111824036},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15033453702926636},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.09435072541236877}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6364384889602661},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.587847888469696},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.532229483127594},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5300471782684326},{"id":"https://openalex.org/C2780586882","wikidata":"https://www.wikidata.org/wiki/Q7520643","display_name":"Simple (philosophy)","level":2,"score":0.5052846074104309},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4542636275291443},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4459574222564697},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36738598346710205},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25078484416007996},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16380175948143005},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1580197513103485},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15612319111824036},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15033453702926636},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09435072541236877},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C111472728","wikidata":"https://www.wikidata.org/wiki/Q9471","display_name":"Epistemology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/ett.4460010410","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010410","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1545233807","https://openalex.org/W1968752752","https://openalex.org/W2077123334","https://openalex.org/W2078488034","https://openalex.org/W2079372450","https://openalex.org/W2083574300","https://openalex.org/W2094484501"],"related_works":["https://openalex.org/W1585007175","https://openalex.org/W2382521049","https://openalex.org/W2144385241","https://openalex.org/W2347585086","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W2165950148","https://openalex.org/W4253593777","https://openalex.org/W1966596465","https://openalex.org/W2951497643"],"abstract_inverted_index":{"Abstract":[0],"A":[1],"study":[2],"of":[3,35],"pseudomorphic":[4],"layers":[5],"properties":[6],"using":[7],"a":[8],"selfconsistent":[9],"approach":[10],"is":[11],"presented.":[12],"The":[13],"strain":[14],"effects":[15],"are":[16,27,42],"taken":[17],"into":[18],"account.":[19],"Sheet":[20],"carrier":[21],"density":[22],"and":[23],"capacitance":[24],"voltage":[25],"characteristics":[26],"related":[28],"to":[29],"technological":[30],"layer":[31],"parameters.":[32],"Simple":[33],"expressions":[34],"subband":[36],"energy":[37],"well":[38],"suited":[39],"for":[40],"CAD":[41],"then":[43],"deduced.":[44]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}