{"id":"https://openalex.org/W1983356361","doi":"https://doi.org/10.1002/ett.4460010409","title":"Structural optimization of millimeter\u2010wave subhalf\u2010micron gate MODFETs","display_name":"Structural optimization of millimeter\u2010wave subhalf\u2010micron gate MODFETs","publication_year":1990,"publication_date":"1990-07-01","ids":{"openalex":"https://openalex.org/W1983356361","doi":"https://doi.org/10.1002/ett.4460010409","mag":"1983356361"},"language":"en","primary_location":{"id":"doi:10.1002/ett.4460010409","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010409","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074819779","display_name":"T.G. Shawki","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Tarek Shawki","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS Universite\u0301 des Sciences et Techniques de Lille-Flandres-Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS Universit\u00e9 des Sciences et Techniques de Lille\u2010Flandres\u2010Artois 59655 Villeneuve d'Ascq Cedex \u2010 France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS Universite\u0301 des Sciences et Techniques de Lille-Flandres-Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS Universit\u00e9 des Sciences et Techniques de Lille\u2010Flandres\u2010Artois 59655 Villeneuve d'Ascq Cedex \u2010 France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011580589","display_name":"G. Salmer","orcid":null},"institutions":[{"id":"https://openalex.org/I44563897","display_name":"Universit\u00e9 d'Artois","ror":"https://ror.org/053x9s498","country_code":"FR","type":"education","lineage":["https://openalex.org/I44563897"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Georges Salmer","raw_affiliation_strings":["Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS Universite\u0301 des Sciences et Techniques de Lille-Flandres-Artois 59655 Villeneuve d'Ascq Cedex - France","Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS Universit\u00e9 des Sciences et Techniques de Lille\u2010Flandres\u2010Artois 59655 Villeneuve d'Ascq Cedex \u2010 France"],"affiliations":[{"raw_affiliation_string":"Centre Hyperfre\u0301quences et Semiconducteurs U.A. 287 CNRS Universite\u0301 des Sciences et Techniques de Lille-Flandres-Artois 59655 Villeneuve d'Ascq Cedex - France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Centre Hyperfr\u00e9quences et Semiconducteurs U.A. 287 CNRS Universit\u00e9 des Sciences et Techniques de Lille\u2010Flandres\u2010Artois 59655 Villeneuve d'Ascq Cedex \u2010 France","institution_ids":["https://openalex.org/I44563897","https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5074819779"],"corresponding_institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I44563897"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.08677206,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":"4","first_page":"421","last_page":"428"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6457006931304932},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.6050258278846741},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5895520448684692},{"id":"https://openalex.org/keywords/oscillation","display_name":"Oscillation (cell signaling)","score":0.5682469010353088},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5459820032119751},{"id":"https://openalex.org/keywords/extremely-high-frequency","display_name":"Extremely high frequency","score":0.5268320441246033},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.47671809792518616},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4328700006008148},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2774553894996643},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2083752155303955},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.20348286628723145},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1954871118068695},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14241302013397217},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.14019256830215454},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08249738812446594}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6457006931304932},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.6050258278846741},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5895520448684692},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.5682469010353088},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5459820032119751},{"id":"https://openalex.org/C45764600","wikidata":"https://www.wikidata.org/wiki/Q570342","display_name":"Extremely high frequency","level":2,"score":0.5268320441246033},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.47671809792518616},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4328700006008148},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2774553894996643},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2083752155303955},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.20348286628723145},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1954871118068695},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14241302013397217},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.14019256830215454},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08249738812446594},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/ett.4460010409","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010409","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1968752752","https://openalex.org/W1973963148","https://openalex.org/W1987326789","https://openalex.org/W2030891559","https://openalex.org/W2038451890","https://openalex.org/W2038491415","https://openalex.org/W2045244586","https://openalex.org/W2049122157","https://openalex.org/W2069618557","https://openalex.org/W2079004242","https://openalex.org/W2124743935","https://openalex.org/W2142119128","https://openalex.org/W2157255186","https://openalex.org/W2569133694"],"related_works":["https://openalex.org/W4378770497","https://openalex.org/W2049584446","https://openalex.org/W2004735650","https://openalex.org/W2079781215","https://openalex.org/W2064404759","https://openalex.org/W1551019254","https://openalex.org/W4385571583","https://openalex.org/W4308245303","https://openalex.org/W2014033564","https://openalex.org/W2910573937"],"abstract_inverted_index":{"Abstract":[0],"A":[1],"study":[2],"of":[3,6,11,41,55,72,103],"the":[4,7,26,39,52,107],"variations":[5],"small":[8],"signal":[9],"parameters":[10],"subhalf\u2010micron\u2010gate":[12,90],"Het\u2010erostructure":[13],"Field":[14],"Effect":[15],"Transistors":[16],"HFETs":[17],"with":[18],"device":[19,73],"scaling":[20],"(aspect":[21],"ratio),":[22],"gate":[23],"offset":[24],"in":[25,85,101,106],"recessed":[27],"zone":[28],"and":[29,58,62],"hot\u2010carrier":[30],"confinement":[31],"by":[32],"buffer":[33],"barriers":[34],"is":[35],"carried":[36],"out":[37],"for":[38,46],"sake":[40],"optimizing":[42],"sumicron":[43],"HFET":[44,86],"structures":[45,57,92],"40\u2013100":[47],"GHz":[48,105],"applications.":[49],"We":[50,80],"discuss":[51],"performance":[53,88],"limits":[54],"existing":[56],"investigate":[59],"new":[60],"concepts":[61],"approaches":[63],"to":[64,96],"circumvent":[65],"these":[66],"limitations":[67],"based":[68],"on":[69],"thorough":[70],"understanding":[71],"physics":[74],"gained":[75],"from":[76],"2D":[77],"energy":[78],"modeling.":[79],"project":[81],"a":[82],"net":[83],"improvement":[84],"millimetric":[87],"using":[89],"pseudomorphic":[91],"which":[93],"we":[94],"expect":[95],"have":[97],"maximum":[98],"oscillation":[99],"frequencies":[100],"excess":[102],"400":[104],"near":[108],"future.":[109]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}