{"id":"https://openalex.org/W4243002080","doi":"https://doi.org/10.1002/ett.4460010309","title":"BICMOS technologies","display_name":"BICMOS technologies","publication_year":1990,"publication_date":"1990-05-01","ids":{"openalex":"https://openalex.org/W4243002080","doi":"https://doi.org/10.1002/ett.4460010309"},"language":"en","primary_location":{"id":"doi:10.1002/ett.4460010309","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010309","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110896892","display_name":"Marcel Roche","orcid":null},"institutions":[{"id":"https://openalex.org/I899635006","display_name":"Universit\u00e9 Grenoble Alpes","ror":"https://ror.org/02rx3b187","country_code":"FR","type":"education","lineage":["https://openalex.org/I899635006"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Marcel Roche","raw_affiliation_strings":["SGS - Thomson Microelectronics Centre de Grenoble 17, Avenue des Martyres 38019 Grenoble Cedex"],"affiliations":[{"raw_affiliation_string":"SGS - Thomson Microelectronics Centre de Grenoble 17, Avenue des Martyres 38019 Grenoble Cedex","institution_ids":["https://openalex.org/I899635006"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5110896892"],"corresponding_institution_ids":["https://openalex.org/I899635006"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.42449035,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":"3","first_page":"285","last_page":"291"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9783999919891357,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9783999919891357,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9563000202178955,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9297999739646912,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.8905931711196899},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5938243865966797},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5208326578140259},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4740086495876312},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4676135778427124},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4363832473754883},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40435126423835754},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3904765248298645},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22777396440505981},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07105690240859985}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.8905931711196899},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5938243865966797},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5208326578140259},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4740086495876312},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4676135778427124},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4363832473754883},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40435126423835754},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3904765248298645},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22777396440505981},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07105690240859985}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/ett.4460010309","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010309","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5699999928474426,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1528307669","https://openalex.org/W1563135574","https://openalex.org/W1996665032","https://openalex.org/W2009319513","https://openalex.org/W2057917287"],"related_works":["https://openalex.org/W2136081556","https://openalex.org/W2168341847","https://openalex.org/W2012536985","https://openalex.org/W2171975881","https://openalex.org/W2197038576","https://openalex.org/W2155160465","https://openalex.org/W2063956400","https://openalex.org/W2119551906","https://openalex.org/W2100977182","https://openalex.org/W1839108638"],"abstract_inverted_index":{"Abstract":[0],"This":[1],"paper":[2],"describes":[3],"why":[4],"and":[5,29,33,59,68],"how":[6],"BICMOS":[7,54],"technology":[8,16],"will":[9],"be":[10],"one":[11],"of":[12,18,25,31,38,40,53],"the":[13,19,26,36,45,60],"top":[14],"three":[15],"stars":[17],"next":[20],"decade.":[21],"After":[22],"a":[23],"presentation":[24],"specific":[27],"advantages":[28],"drawback5":[30],"Bipolar":[32],"CMOS":[34],"technologies,":[35],"exploitation":[37],"characteristics":[39],"both":[41],"components.":[42],"realized":[43],"on":[44],"same":[46],"chip,":[47],"is":[48,57],"discussed.":[49],"A":[50],"brief":[51],"description":[52],"process":[55],"architectures":[56],"given":[58],"performances":[61],"currently":[62],"achieved":[63],"are":[64,71],"presented.":[65],"Finally":[66],"present":[67],"future":[69],"applicarions":[70],"considered":[72],"for":[73],"Memories,":[74],"Gate":[75],"arrays,":[76],"Telecommunications":[77],"IC's,":[78],"Analog":[79],"IC's":[80],"etc.":[81]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}