{"id":"https://openalex.org/W2118025683","doi":"https://doi.org/10.1002/ett.4460010216","title":"Interconnections technologies for VLSI circuits","display_name":"Interconnections technologies for VLSI circuits","publication_year":1990,"publication_date":"1990-03-01","ids":{"openalex":"https://openalex.org/W2118025683","doi":"https://doi.org/10.1002/ett.4460010216","mag":"2118025683"},"language":"en","primary_location":{"id":"doi:10.1002/ett.4460010216","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010216","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111762829","display_name":"G. De Santi","orcid":null},"institutions":[{"id":"https://openalex.org/I131827901","display_name":"STMicroelectronics (Switzerland)","ror":"https://ror.org/00wm3b005","country_code":"CH","type":"company","lineage":["https://openalex.org/I131827901"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Giorgio De Santi","raw_affiliation_strings":["SGS-Thomson Microelectronics R&D. Central Dep. - 20041 Agrate Brianza (Milano) - Italy","SGS\u2010Thomson Microelectronics R&D. Central Dep. \u2010 20041 Agrate Brianza (Milano) \u2010 Italy"],"affiliations":[{"raw_affiliation_string":"SGS-Thomson Microelectronics R&D. Central Dep. - 20041 Agrate Brianza (Milano) - Italy","institution_ids":[]},{"raw_affiliation_string":"SGS\u2010Thomson Microelectronics R&D. Central Dep. \u2010 20041 Agrate Brianza (Milano) \u2010 Italy","institution_ids":["https://openalex.org/I131827901"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5111762829"],"corresponding_institution_ids":["https://openalex.org/I131827901"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21343062,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":"2","first_page":"173","last_page":"177"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.8581869602203369},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.7969461679458618},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6732369661331177},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5515836477279663},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5094154477119446},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.5080170631408691},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5000557899475098},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.49148738384246826},{"id":"https://openalex.org/keywords/silicon-chip","display_name":"Silicon chip","score":0.44557830691337585},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.4252457618713379},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4030764102935791},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.3466821312904358},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3110102415084839},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24180221557617188},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17096978425979614},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.16299033164978027},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.08703511953353882},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0628821849822998},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.05188876390457153}],"concepts":[{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.8581869602203369},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.7969461679458618},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6732369661331177},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5515836477279663},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5094154477119446},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.5080170631408691},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5000557899475098},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.49148738384246826},{"id":"https://openalex.org/C2983805867","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Silicon chip","level":3,"score":0.44557830691337585},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.4252457618713379},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4030764102935791},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3466821312904358},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3110102415084839},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24180221557617188},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17096978425979614},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16299033164978027},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.08703511953353882},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0628821849822998},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.05188876390457153},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/ett.4460010216","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010216","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.46000000834465027}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1555969351","https://openalex.org/W2002651922","https://openalex.org/W2007719944","https://openalex.org/W2077889762","https://openalex.org/W2078573417","https://openalex.org/W2128165152","https://openalex.org/W2132598416","https://openalex.org/W2139484361"],"related_works":["https://openalex.org/W2081032080","https://openalex.org/W2134733504","https://openalex.org/W2144460576","https://openalex.org/W2018755015","https://openalex.org/W2550592481","https://openalex.org/W2098218272","https://openalex.org/W2076199735","https://openalex.org/W2372686625","https://openalex.org/W2386903594","https://openalex.org/W1975824113"],"abstract_inverted_index":{"Abstract":[0],"VLSI":[1],"technologies":[2],"led":[3],"to":[4],"the":[5,26,29,45,48,56],"possibility":[6],"of":[7,9,14,25,37,47,59],"integration":[8],"more":[10],"than":[11],"a":[12,18],"million":[13],"active":[15],"devices":[16],"on":[17],"single":[19],"silicon":[20],"chip.":[21],"A":[22],"significant":[23],"part":[24],"effort":[27],"in":[28,35],"geometrical":[30],"circuitry":[31],"shrinkage":[32],"was":[33],"set":[34],"development":[36],"suitable":[38],"interconnection":[39],"technologies.":[40],"The":[41],"goals":[42],"persued":[43],"were":[44],"improvement":[46,58],"electrical":[49],"properties":[50],"(conductivity":[51],"and":[52],"contact":[53],"resistance)":[54],"with":[55],"simultaneous":[57],"reliability":[60],"performances.":[61]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}