{"id":"https://openalex.org/W2030328181","doi":"https://doi.org/10.1002/ett.4460010210","title":"Feasibility of 3D integration","display_name":"Feasibility of 3D integration","publication_year":1990,"publication_date":"1990-03-01","ids":{"openalex":"https://openalex.org/W2030328181","doi":"https://doi.org/10.1002/ett.4460010210","mag":"2030328181"},"language":"en","primary_location":{"id":"doi:10.1002/ett.4460010210","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010210","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073482587","display_name":"N. Sasaki","orcid":null},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Nohuo Sasaki","raw_affiliation_strings":["Advanced Technology Division, Fujitsu Limited, Kawasaki 211, Japan","Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Division, Fujitsu Limited, Kawasaki 211, Japan","institution_ids":["https://openalex.org/I2252096349"]},{"raw_affiliation_string":"Advanced Technology Division, Fujitsu Limited, Kawasaki, 211, Japan","institution_ids":["https://openalex.org/I2252096349"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5073482587"],"corresponding_institution_ids":["https://openalex.org/I2252096349"],"apc_list":null,"apc_paid":null,"fwci":1.0258,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.75416836,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"1","issue":"2","first_page":"137","last_page":"142"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/stacking","display_name":"Stacking","score":0.6666743755340576},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.663754940032959},{"id":"https://openalex.org/keywords/recrystallization","display_name":"Recrystallization (geology)","score":0.6164641976356506},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6089949607849121},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5557808876037598},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.533261239528656},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.47076132893562317},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.45982009172439575},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.43748927116394043},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33554136753082275},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.32674625515937805},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2771366238594055},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1999131739139557},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14986521005630493},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.13721591234207153},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12149423360824585},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07873472571372986},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07241016626358032}],"concepts":[{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.6666743755340576},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.663754940032959},{"id":"https://openalex.org/C195702682","wikidata":"https://www.wikidata.org/wiki/Q623318","display_name":"Recrystallization (geology)","level":2,"score":0.6164641976356506},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6089949607849121},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5557808876037598},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.533261239528656},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47076132893562317},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.45982009172439575},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.43748927116394043},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33554136753082275},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.32674625515937805},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2771366238594055},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1999131739139557},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14986521005630493},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13721591234207153},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12149423360824585},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07873472571372986},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07241016626358032},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/ett.4460010210","is_oa":false,"landing_page_url":"https://doi.org/10.1002/ett.4460010210","pdf_url":null,"source":{"id":"https://openalex.org/S4393917101","display_name":"European Transactions on Telecommunications","issn_l":"1124-318X","issn":["1124-318X","1541-8251"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"European Transactions on Telecommunications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1966880573","https://openalex.org/W1986588707","https://openalex.org/W1987879449","https://openalex.org/W1990919014","https://openalex.org/W2004193831","https://openalex.org/W2011241197","https://openalex.org/W2018586165","https://openalex.org/W2021226137","https://openalex.org/W2043797496","https://openalex.org/W2048982536","https://openalex.org/W2055578399","https://openalex.org/W2057885578","https://openalex.org/W2062151775","https://openalex.org/W2068638240","https://openalex.org/W2074987998","https://openalex.org/W2077784085","https://openalex.org/W2079223887","https://openalex.org/W2087552937","https://openalex.org/W2117739782","https://openalex.org/W2122120423","https://openalex.org/W2124265959","https://openalex.org/W2161180770","https://openalex.org/W2163661362","https://openalex.org/W2313397864","https://openalex.org/W2329609475"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2133198051","https://openalex.org/W2473578222"],"abstract_inverted_index":{"Abstract":[0],"Laser\u2010recrystatiization":[1],"is":[2,20,50,58,64,83,104,118],"the":[3,23,27,35,44,65,102],"best":[4],"way":[5],"to":[6,43,134],"fabricate":[7],"SOI":[8,24],"for":[9,22,97,131],"3D":[10,36,74,81,120],"IC's.":[11],"Low":[12],"source\u2010to\u2010drain":[13],"leakage":[14],"current":[15],"as":[16,18,110],"small":[17],"3fA/\u03bcm":[19],"obtained":[21],"MOSFET's":[25,140],"with":[26],"simple":[28],"unseeded":[29],"recrystallization":[30],"containing":[31],"grain":[32],"boundaries.":[33],"For":[34],"CMOS":[37,47,99],"static":[38,48,98],"RAM's,":[39,100],"packing":[40],"density":[41],"ratio":[42,57],"conventional":[45],"2D":[46,88,132],"RAM's":[49],"given":[51,59],"by":[52,60,92,106],"2n/3.":[53],"and":[54,71,138],"process":[55,126],"steps":[56],"n/3,":[61],"where":[62],"n":[63],"device":[66,144],"stacking":[67],"number.":[68],"The":[69,78,114],"yield":[70,103],"cost":[72,79],"OF":[73],"1C's":[75,121,133],"are":[76,129],"analyzed.":[77],"of":[80,87,95,116],"IC's":[82,89],"less":[84],"than":[85],"that":[86,119],"at":[90],"least":[91],"a":[93,142],"factor":[94],"two":[96],"if":[101],"determined":[105],"such":[107],"random":[108],"defects":[109],"accidental":[111],"fine":[112],"particles.":[113],"reason":[115],"this":[117],"do":[122],"not":[123],"require":[124],"some":[125],"steps,":[127],"which":[128],"necessary":[130],"differentiate":[135],"between":[136],"n\u2010":[137],"p\u2010channel":[139],"in":[141],"single":[143],"level.":[145]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}