{"id":"https://openalex.org/W4389508847","doi":"https://doi.org/10.1002/aisy.202300634","title":"Realization of Self\u2010Rectifying and Self\u2010Powered Resistive Random\u2010Access Memory Memristor Using [001]\u2010Oriented NaNbO<sub>3</sub> Film Deposited on Sr<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> Nanosheet at Low Temperatures","display_name":"Realization of Self\u2010Rectifying and Self\u2010Powered Resistive Random\u2010Access Memory Memristor Using [001]\u2010Oriented NaNbO<sub>3</sub> Film Deposited on Sr<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> Nanosheet at Low Temperatures","publication_year":2023,"publication_date":"2023-12-08","ids":{"openalex":"https://openalex.org/W4389508847","doi":"https://doi.org/10.1002/aisy.202300634"},"language":"en","primary_location":{"id":"doi:10.1002/aisy.202300634","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300634","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300634","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300634","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5039636318","display_name":"In\u2010Su Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I4210161052","display_name":"Korea University","ror":"https://ror.org/05m1gnk07","country_code":"JP","type":"education","lineage":["https://openalex.org/I4210161052"]}],"countries":["JP","KR"],"is_corresponding":false,"raw_author_name":"In-Su Kim","raw_affiliation_strings":["Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I4210161052","https://openalex.org/I197347611"]},{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076387634","display_name":"Bumjoo Kim","orcid":"https://orcid.org/0000-0002-0725-7947"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I4210161052","display_name":"Korea University","ror":"https://ror.org/05m1gnk07","country_code":"JP","type":"education","lineage":["https://openalex.org/I4210161052"]}],"countries":["JP","KR"],"is_corresponding":false,"raw_author_name":"Bumjoo Kim","raw_affiliation_strings":["Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I4210161052","https://openalex.org/I197347611"]},{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010898994","display_name":"Seok\u2010June Chae","orcid":null},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I4210161052","display_name":"Korea University","ror":"https://ror.org/05m1gnk07","country_code":"JP","type":"education","lineage":["https://openalex.org/I4210161052"]}],"countries":["JP","KR"],"is_corresponding":false,"raw_author_name":"Seok-June Chae","raw_affiliation_strings":["Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I4210161052","https://openalex.org/I197347611"]},{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010989220","display_name":"Sahn Nahm","orcid":"https://orcid.org/0000-0003-2192-5320"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I4210161052","display_name":"Korea University","ror":"https://ror.org/05m1gnk07","country_code":"JP","type":"education","lineage":["https://openalex.org/I4210161052"]}],"countries":["JP","KR"],"is_corresponding":true,"raw_author_name":"Sahn Nahm","raw_affiliation_strings":["Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University  145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I4210161052","https://openalex.org/I197347611"]},{"raw_affiliation_string":"Department of Materials Science and Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5010989220"],"corresponding_institution_ids":["https://openalex.org/I197347611","https://openalex.org/I4210161052"],"apc_list":{"value":2750,"currency":"USD","value_usd":2750},"apc_paid":{"value":2750,"currency":"USD","value_usd":2750},"fwci":0.7758,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.723087,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"6","issue":"3","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10247","display_name":"Perovskite Materials and Applications","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.8694247007369995},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7289149165153503},{"id":"https://openalex.org/keywords/rectification","display_name":"Rectification","score":0.7079712748527527},{"id":"https://openalex.org/keywords/monolayer","display_name":"Monolayer","score":0.6557613015174866},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.5423924922943115},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.4909501373767853},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.48882290720939636},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.48542389273643494},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.44884005188941956},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4279630184173584},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3250366449356079},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.26959875226020813},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22273731231689453},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.11546275019645691},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08346092700958252},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06374853849411011}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.8694247007369995},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7289149165153503},{"id":"https://openalex.org/C50942859","wikidata":"https://www.wikidata.org/wiki/Q4967193","display_name":"Rectification","level":3,"score":0.7079712748527527},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.6557613015174866},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5423924922943115},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4909501373767853},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.48882290720939636},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.48542389273643494},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.44884005188941956},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4279630184173584},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3250366449356079},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.26959875226020813},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22273731231689453},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.11546275019645691},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08346092700958252},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06374853849411011},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1002/aisy.202300634","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300634","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300634","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:04954d622db24073b7a376a793a0c607","is_oa":true,"landing_page_url":"https://doaj.org/article/04954d622db24073b7a376a793a0c607","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Advanced Intelligent Systems, Vol 6, Iss 3, Pp n/a-n/a (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1002/aisy.202300634","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300634","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300634","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2072118429","display_name":null,"funder_award_id":"RS-2023-00254689","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G3034753964","display_name":null,"funder_award_id":"grant","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G342704958","display_name":null,"funder_award_id":"funded","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G5199667013","display_name":null,"funder_award_id":"RS-2023-00254689","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G8558774905","display_name":null,"funder_award_id":"No.RS-2023-00254689","funder_id":"https://openalex.org/F4320322349","funder_display_name":"Ministry of Education, Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322349","display_name":"Ministry of Education, Science and Technology","ror":"https://ror.org/01p262204"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W4389508847.pdf"},"referenced_works_count":53,"referenced_works":["https://openalex.org/W1526331010","https://openalex.org/W1974665360","https://openalex.org/W2002016471","https://openalex.org/W2018409502","https://openalex.org/W2020564428","https://openalex.org/W2021656562","https://openalex.org/W2030454161","https://openalex.org/W2044073130","https://openalex.org/W2045197688","https://openalex.org/W2068657067","https://openalex.org/W2070856049","https://openalex.org/W2072462334","https://openalex.org/W2076256736","https://openalex.org/W2080762952","https://openalex.org/W2086764942","https://openalex.org/W2095053155","https://openalex.org/W2095904636","https://openalex.org/W2146014696","https://openalex.org/W2148331362","https://openalex.org/W2167174841","https://openalex.org/W2172307690","https://openalex.org/W2286806323","https://openalex.org/W2319078264","https://openalex.org/W2331880520","https://openalex.org/W2526646482","https://openalex.org/W2564302978","https://openalex.org/W2585218234","https://openalex.org/W2618566344","https://openalex.org/W2753526263","https://openalex.org/W2794656737","https://openalex.org/W2813484453","https://openalex.org/W2888961626","https://openalex.org/W2907007761","https://openalex.org/W2910128286","https://openalex.org/W2914881257","https://openalex.org/W2966192539","https://openalex.org/W2970585112","https://openalex.org/W2990793844","https://openalex.org/W2993227197","https://openalex.org/W2993598462","https://openalex.org/W3012045830","https://openalex.org/W3022214422","https://openalex.org/W3023911885","https://openalex.org/W3084208337","https://openalex.org/W3087441103","https://openalex.org/W3091827636","https://openalex.org/W3098316772","https://openalex.org/W3159062853","https://openalex.org/W3169150470","https://openalex.org/W4205843713","https://openalex.org/W4220783490","https://openalex.org/W4224291879","https://openalex.org/W4306804828"],"related_works":["https://openalex.org/W4229452466","https://openalex.org/W2966276069","https://openalex.org/W2463286374","https://openalex.org/W2304829496","https://openalex.org/W2052332160","https://openalex.org/W2358307108","https://openalex.org/W3031124155","https://openalex.org/W4387714846","https://openalex.org/W1800216104","https://openalex.org/W2951403244"],"abstract_inverted_index":{"[001]\u2010oriented":[0,175,218],"NaNbO":[1,36,43,100,176,207,213,220],"3":[2,10,24,37,44,52,76,101,110,177,208,214,221],"films":[3,38,45],"are":[4,28,96,153,203],"deposited":[5,46],"on":[6,47,105],"Sr":[7,21,49,73,107],"2":[8,14,22,50,74,108],"Nb":[9,23,51,75,109],"O":[11,25,53,77,111],"10":[12,26,54,78,112],"/TiN/SiO":[13],"/Si":[15],"substrates":[16],"at":[17,39,163,224],"300":[18,225],"\u00b0C.":[19],"The":[20,42,122,169],"nanosheets":[27],"used":[29],"as":[30,83,116],"a":[31,57],"template":[32],"to":[33,62],"form":[34],"crystalline":[35,219],"low":[40,164],"temperature.":[41],"one":[48],"monolayer":[55,79],"exhibit":[56,91],"bipolar":[58],"switching":[59],"curve":[60],"due":[61],"the":[63,72,87,99,120,137,142,145,156,160,174,191,200,206,212,217],"construction":[64],"and":[65,127,132,148,151,165,184,195,232],"destruction":[66],"of":[67,130,141,190,199],"oxygen":[68],"vacancy":[69],"filaments.":[70],"Because":[71],"does":[80,89],"not":[81,90],"act":[82,115],"an":[84],"insulating":[85],"layer,":[86],"film":[88,178,222],"self\u2010rectifying":[92,231],"properties.":[93],"Self\u2010rectifying":[94],"properties":[95],"observed":[97],"in":[98,119,144,159,205],"memristor,":[102],"which":[103],"forms":[104],"two":[106],"monolayers":[113],"that":[114],"tunnel":[117],"barriers":[118],"memristor.":[121],"memristor":[123,209],"exhibits":[124],"extensive":[125],"rectification":[126],"on/off":[128],"ratios":[129],"48":[131],"15.7,":[133],"respectively.":[134,168],"Tunneling":[135],"is":[136],"current":[138],"conduction":[139,157],"mechanism":[140,158],"device":[143],"low\u2010resistance":[146],"state,":[147],"Schottky":[149],"emission":[150],"tunneling":[152],"responsible":[154],"for":[155,230],"high\u2010resistance":[161],"state":[162],"high":[166,180],"voltages,":[167],"piezoelectric":[170],"nanogenerator":[171],"produced":[172],"using":[173],"generates":[179],"voltage":[181],"(1.8":[182],"V)":[183],"power":[185],"(3.2":[186],"\u03bcW).":[187],"Furthermore,":[188],"endurance":[189],"resistive":[192],"random\u2010access":[193],"memory":[194],"nonlinear":[196],"transmission":[197],"characteristics":[198],"biological":[201],"synapse":[202],"accomplished":[204],"powered":[210],"by":[211],"nanogenerator.":[215],"Therefore,":[216],"formed":[223],"\u00b0C":[226],"may":[227],"be":[228],"utilized":[229],"self\u2010powered":[233],"artificial":[234],"synapses.":[235]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":1}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2023-12-10T00:00:00"}