{"id":"https://openalex.org/W4377098283","doi":"https://doi.org/10.1002/aisy.202300080","title":"Effect of Al Concentration on Ferroelectric Properties in HfAlO<sub><i>x</i></sub>\u2010Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications","display_name":"Effect of Al Concentration on Ferroelectric Properties in HfAlO<sub><i>x</i></sub>\u2010Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications","publication_year":2023,"publication_date":"2023-05-18","ids":{"openalex":"https://openalex.org/W4377098283","doi":"https://doi.org/10.1002/aisy.202300080"},"language":"en","primary_location":{"id":"doi:10.1002/aisy.202300080","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300080","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300080","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300080","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077417443","display_name":"Jihyung Kim","orcid":"https://orcid.org/0000-0002-3854-3145"},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyung Kim","raw_affiliation_strings":["Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]},{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101614732","display_name":"Dahye Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]},{"id":"https://openalex.org/I4210134425","display_name":"Fraunhofer Institute for Reliability and Microintegration","ror":"https://ror.org/031aqk326","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210134425","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4210145959","display_name":"Fraunhofer Institute for Ceramic Technologies and Systems","ror":"https://ror.org/0448sak71","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210145959","https://openalex.org/I4923324"]}],"countries":["DE","KR"],"is_corresponding":false,"raw_author_name":"Dahye Kim","raw_affiliation_strings":["Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","Nanomechanics and Reliability for Microelectronics Fraunhofer IKTS  01109 Dresden Germany","Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea","Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]},{"raw_affiliation_string":"Nanomechanics and Reliability for Microelectronics Fraunhofer IKTS  01109 Dresden Germany","institution_ids":["https://openalex.org/I4210134425"]},{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]},{"raw_affiliation_string":"Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, Germany","institution_ids":["https://openalex.org/I4210145959"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014119100","display_name":"Kyung Kyu Min","orcid":"https://orcid.org/0000-0001-6514-5348"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung Kyu Min","raw_affiliation_strings":["Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center Seoul National University  Seoul 08826 Republic of Korea","Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center Seoul National University  Seoul 08826 Republic of Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826 Republic of Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005259128","display_name":"Matthias Kraatz","orcid":"https://orcid.org/0000-0002-9534-7060"},"institutions":[{"id":"https://openalex.org/I4210134425","display_name":"Fraunhofer Institute for Reliability and Microintegration","ror":"https://ror.org/031aqk326","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210134425","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4210145959","display_name":"Fraunhofer Institute for Ceramic Technologies and Systems","ror":"https://ror.org/0448sak71","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210145959","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Matthias Kraatz","raw_affiliation_strings":["Nanomechanics and Reliability for Microelectronics Fraunhofer IKTS  01109 Dresden Germany","Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Nanomechanics and Reliability for Microelectronics Fraunhofer IKTS  01109 Dresden Germany","institution_ids":["https://openalex.org/I4210134425"]},{"raw_affiliation_string":"Nanomechanics and Reliability for Microelectronics, Fraunhofer IKTS, 01109 Dresden, Germany","institution_ids":["https://openalex.org/I4210145959"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078592237","display_name":"Taeyoung Han","orcid":"https://orcid.org/0000-0001-7784-8884"},"institutions":[{"id":"https://openalex.org/I4210110247","display_name":"Fraunhofer Institute for Photonic Microsystems","ror":"https://ror.org/020n3fw10","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210110247","https://openalex.org/I4923324"]},{"id":"https://openalex.org/I4210145959","display_name":"Fraunhofer Institute for Ceramic Technologies and Systems","ror":"https://ror.org/0448sak71","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210145959","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Taeyoung Han","raw_affiliation_strings":["Biodegradation and Nanofunctionalization Fraunhofer IKTS  Maria-Reiche-Str.2 01109 Dresden Germany","Biodegradation and Nanofunctionalization, Fraunhofer IKTS, Maria-Reiche-Str.2, 01109 Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Biodegradation and Nanofunctionalization Fraunhofer IKTS  Maria-Reiche-Str.2 01109 Dresden Germany","institution_ids":["https://openalex.org/I4210110247"]},{"raw_affiliation_string":"Biodegradation and Nanofunctionalization, Fraunhofer IKTS, Maria-Reiche-Str.2, 01109 Dresden, Germany","institution_ids":["https://openalex.org/I4210145959"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100647604","display_name":"Sungjun Kim","orcid":"https://orcid.org/0000-0002-9873-2474"},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sungjun Kim","raw_affiliation_strings":["Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering Dongguk University  Seoul 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]},{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620 South Korea","institution_ids":["https://openalex.org/I205490536"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100647604"],"corresponding_institution_ids":["https://openalex.org/I205490536"],"apc_list":{"value":2750,"currency":"USD","value_usd":2750},"apc_paid":{"value":2750,"currency":"USD","value_usd":2750},"fwci":1.293,"has_fulltext":true,"cited_by_count":10,"citation_normalized_percentile":{"value":0.796346,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"5","issue":"8","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8979882001876831},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7275340557098389},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7156575322151184},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5979288816452026},{"id":"https://openalex.org/keywords/dopant","display_name":"Dopant","score":0.5784868001937866},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.4820352792739868},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.43226373195648193},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3600894510746002},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.34091705083847046},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25219225883483887},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.16371214389801025},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13244220614433289},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.12611767649650574},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.109386146068573},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.07599261403083801}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8979882001876831},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7275340557098389},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7156575322151184},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5979288816452026},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.5784868001937866},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4820352792739868},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.43226373195648193},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3600894510746002},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34091705083847046},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25219225883483887},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.16371214389801025},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13244220614433289},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.12611767649650574},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.109386146068573},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.07599261403083801},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1002/aisy.202300080","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300080","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300080","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:0fe514f84f9b49379b2d75b5d5dfaea1","is_oa":true,"landing_page_url":"https://doaj.org/article/0fe514f84f9b49379b2d75b5d5dfaea1","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Advanced Intelligent Systems, Vol 5, Iss 8, Pp n/a-n/a (2023)","raw_type":"article"},{"id":"pmh:oai:null:publica/464421","is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/464421","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"journal article"}],"best_oa_location":{"id":"doi:10.1002/aisy.202300080","is_oa":true,"landing_page_url":"https://doi.org/10.1002/aisy.202300080","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aisy.202300080","source":{"id":"https://openalex.org/S4210212817","display_name":"Advanced Intelligent Systems","issn_l":"2640-4567","issn":["2640-4567"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Intelligent Systems","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.800000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G2193524624","display_name":null,"funder_award_id":"20224000000020","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G3130070122","display_name":null,"funder_award_id":"MOTIE","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G3835244544","display_name":null,"funder_award_id":"P0017307","funder_id":"https://openalex.org/F4320322064","funder_display_name":"Korea Institute for Advancement of Technology"},{"id":"https://openalex.org/G5092055710","display_name":null,"funder_award_id":"000000","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G7021605530","display_name":null,"funder_award_id":"2021R1C1C1004422","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G7121727950","display_name":null,"funder_award_id":"KETEP)","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G7480193993","display_name":null,"funder_award_id":"P0017307","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G7869673796","display_name":null,"funder_award_id":"20224000000020","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G889103765","display_name":null,"funder_award_id":"MOTIE","funder_id":"https://openalex.org/F4320322064","funder_display_name":"Korea Institute for Advancement of Technology"},{"id":"https://openalex.org/G992484961","display_name":null,"funder_award_id":"Korea","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322064","display_name":"Korea Institute for Advancement of Technology","ror":"https://ror.org/015w1qa96"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"grobid_xml":false,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4377098283.pdf"},"referenced_works_count":85,"referenced_works":["https://openalex.org/W597886269","https://openalex.org/W1532031741","https://openalex.org/W1538177259","https://openalex.org/W1625170149","https://openalex.org/W1783145639","https://openalex.org/W1853470600","https://openalex.org/W1894289757","https://openalex.org/W1970764495","https://openalex.org/W1984826395","https://openalex.org/W1985569584","https://openalex.org/W1985887979","https://openalex.org/W2003390915","https://openalex.org/W2004005802","https://openalex.org/W2005135813","https://openalex.org/W2008634115","https://openalex.org/W2045624728","https://openalex.org/W2064841664","https://openalex.org/W2082084678","https://openalex.org/W2101219632","https://openalex.org/W2104129492","https://openalex.org/W2112388836","https://openalex.org/W2125262106","https://openalex.org/W2172307690","https://openalex.org/W2443941261","https://openalex.org/W2462963692","https://openalex.org/W2526086769","https://openalex.org/W2546203629","https://openalex.org/W2605020359","https://openalex.org/W2610096401","https://openalex.org/W2613687343","https://openalex.org/W2623907268","https://openalex.org/W2680479899","https://openalex.org/W2767160676","https://openalex.org/W2779217831","https://openalex.org/W2785727944","https://openalex.org/W2793181810","https://openalex.org/W2804080646","https://openalex.org/W2880869856","https://openalex.org/W2885100568","https://openalex.org/W2888119540","https://openalex.org/W2896825304","https://openalex.org/W2899224990","https://openalex.org/W2907535705","https://openalex.org/W2929682617","https://openalex.org/W2972186689","https://openalex.org/W2989781410","https://openalex.org/W2996650495","https://openalex.org/W2997854392","https://openalex.org/W2998675988","https://openalex.org/W3000624865","https://openalex.org/W3006090279","https://openalex.org/W3006105271","https://openalex.org/W3006594623","https://openalex.org/W3013708706","https://openalex.org/W3014354503","https://openalex.org/W3018945530","https://openalex.org/W3035479317","https://openalex.org/W3035905963","https://openalex.org/W3038537572","https://openalex.org/W3038686304","https://openalex.org/W3044575807","https://openalex.org/W3108899305","https://openalex.org/W3111071597","https://openalex.org/W3112317065","https://openalex.org/W3113361193","https://openalex.org/W3122214732","https://openalex.org/W3130114969","https://openalex.org/W3147305620","https://openalex.org/W3179750062","https://openalex.org/W3195427710","https://openalex.org/W3196222114","https://openalex.org/W3206034238","https://openalex.org/W3216276581","https://openalex.org/W4200057623","https://openalex.org/W4206693906","https://openalex.org/W4210619944","https://openalex.org/W4221002796","https://openalex.org/W4224140811","https://openalex.org/W4282046294","https://openalex.org/W4283389692","https://openalex.org/W4285084017","https://openalex.org/W4286634769","https://openalex.org/W4288434033","https://openalex.org/W4292388129","https://openalex.org/W4303969101"],"related_works":["https://openalex.org/W2006986759","https://openalex.org/W1982653982","https://openalex.org/W2808940911","https://openalex.org/W2072456327","https://openalex.org/W2760942457","https://openalex.org/W110584757","https://openalex.org/W2227030050","https://openalex.org/W2012464932","https://openalex.org/W2468192136","https://openalex.org/W2087180192"],"abstract_inverted_index":{"Since":[0],"HfO":[1,48],"x":[2,49],"\u2010based":[3,50],"ferroelectric":[4,79],"tunnel":[5],"junctions":[6],"(FTJs)":[7],"are":[8,20,52,126,139,158],"attractive":[9],"compared":[10],"to":[11,82,122,161],"perovskite\u2010based":[12],"FTJs":[13,51],"and":[14,42,101,150],"other":[15],"emerging":[16],"memory":[17],"devices,":[18],"they":[19],"being":[21],"actively":[22],"studied":[23,160],"recently.":[24],"They":[25],"have":[26],"advantages":[27],"such":[28],"as":[29,61,174],"a":[30,62,175],"simple":[31],"metal\u2013insulator\u2013metal":[32],"structure,":[33],"complementary":[34],"metal":[35],"oxide":[36],"semiconductor":[37],"(CMOS)":[38],"compatibility,":[39],"non\u2010destructive":[40],"operation,":[41],"low":[43],"power":[44],"consumption.":[45],"Moreover,":[46],"doped":[47],"in":[53,56,154,178],"the":[54,67,98,102,116,130,133,163,169],"spotlight":[55],"terms":[57],"of":[58,64,88,93,118,184],"neuromorphic":[59,113,137],"engineering":[60],"way":[63],"advancing":[65],"from":[66],"von":[68],"Neumann":[69],"structure.":[70],"In":[71],"particular,":[72],"Al":[73,94,123],"dopant":[74],"is":[75,110,172],"effective":[76],"for":[77,112,165,181],"inducing":[78],"properties":[80,117],"due":[81],"its":[83],"smaller":[84],"radius":[85],"than":[86],"that":[87],"Hf.":[89],"The":[90,152],"optimal":[91],"concentration":[92],"varies":[95],"depending":[96],"on":[97],"device":[99,131,171],"materials":[100],"annealing":[103],"conditions":[104],"during":[105],"deposition.":[106],"Therefore,":[107],"in\u2010depth":[108],"research":[109],"required":[111],"applications.":[114],"Herein,":[115],"FTJ":[119,170],"devices":[120],"according":[121],"doping":[124],"concentrations":[125],"analyzed.":[127],"Subsequently,":[128],"using":[129],"with":[132],"highest":[134],"remanent":[135],"polarization,":[136],"applications":[138],"implemented,":[140],"including":[141],"spike\u2010timing\u2010dependent":[142],"plasticity":[143],"(STDP),":[144],"paired\u2010pulse":[145],"facilitation":[146],"(PPF),":[147],"long\u2010term":[148],"potentiation,":[149],"depression.":[151],"characteristics":[153],"different":[155],"frequency":[156],"regions":[157],"also":[159],"satisfy":[162],"demand":[164],"fast":[166],"switching.":[167],"Finally,":[168],"used":[173],"physical":[176],"reservoir":[177,179],"computing":[180],"efficient":[182],"processing":[183],"time\u2010dependent":[185],"inputs.":[186]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":1}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}