{"id":"https://openalex.org/W98646696","doi":null,"title":"Fabrication, characterization, and modeling of metallic source/drain MOSFETs","display_name":"Fabrication, characterization, and modeling of metallic source/drain MOSFETs","publication_year":2011,"publication_date":"2011-01-01","ids":{"openalex":"https://openalex.org/W98646696","mag":"98646696"},"language":"en","primary_location":{"id":"pmh:oai:DiVA.org:kth-49184","doi":null,"is_oa":true,"landing_page_url":"http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-49184","pdf_url":null,"source":{"id":"https://openalex.org/S4306401559","display_name":"KTH Publication Database DiVA (KTH Royal Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I86987016","host_organization_name":"KTH Royal Institute of Technology","host_organization_lineage":["https://openalex.org/I86987016"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/doctoralThesis"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-49184","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077625084","display_name":"Valur Gudmundsson","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Valur Gudmundsson","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5077625084"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8715999722480774,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8715999722480774,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.11190000176429749,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.012000000104308128,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.8999999761581421},{"id":"https://openalex.org/keywords/impurity-segregation","display_name":"impurity segregation","score":0.9440000057220459},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"contact resistance","score":0.6069999933242798},{"id":"https://openalex.org/keywords/beryllium","display_name":"beryllium","score":0.6880000233650208},{"id":"https://openalex.org/keywords/bismuth","display_name":"bismuth","score":0.9940000176429749},{"id":"https://openalex.org/keywords/tellurium","display_name":"tellurium","score":1.0},{"id":"https://openalex.org/keywords/nickel-silicide","display_name":"nickel silicide","score":0.6819999814033508},{"id":"https://openalex.org/keywords/sidewall-roughness","display_name":"sidewall roughness","score":0.953000009059906},{"id":"https://openalex.org/keywords/ultra-thin-body-mosfet","display_name":"ultra-thin body MOSFET","score":0.9319999814033508},{"id":"https://openalex.org/keywords/tri-gate-mosfet","display_name":"tri-gate MOSFET","score":0.9649999737739563},{"id":"https://openalex.org/keywords/double-gate-mosfet","display_name":"double-gate MOSFET","score":0.8410000205039978}],"concepts":[{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.6314586997032166},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5900822877883911},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4654199779033661},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36558854579925537},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.33606845140457153},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23759737610816956},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22205698490142822},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:DiVA.org:kth-49184","doi":null,"is_oa":true,"landing_page_url":"http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-49184","pdf_url":null,"source":{"id":"https://openalex.org/S4306401559","display_name":"KTH Publication Database DiVA (KTH Royal Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I86987016","host_organization_name":"KTH Royal Institute of Technology","host_organization_lineage":["https://openalex.org/I86987016"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/doctoralThesis"},{"id":"mag:98646696","doi":null,"is_oa":false,"landing_page_url":"http://kth.diva-portal.org/smash/get/diva2:459483/FULLTEXT01","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:DiVA.org:kth-49184","doi":null,"is_oa":true,"landing_page_url":"http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-49184","pdf_url":null,"source":{"id":"https://openalex.org/S4306401559","display_name":"KTH Publication Database DiVA (KTH Royal Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I86987016","host_organization_name":"KTH Royal Institute of Technology","host_organization_lineage":["https://openalex.org/I86987016"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/doctoralThesis"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":144,"referenced_works":["https://openalex.org/W48109878","https://openalex.org/W109349899","https://openalex.org/W154199091","https://openalex.org/W175991443","https://openalex.org/W1497935076","https://openalex.org/W1527517264","https://openalex.org/W1536879103","https://openalex.org/W1536904167","https://openalex.org/W1540105840","https://openalex.org/W1579930999","https://openalex.org/W1607019360","https://openalex.org/W1670789892","https://openalex.org/W1694186307","https://openalex.org/W1777710502","https://openalex.org/W1874408258","https://openalex.org/W1972497017","https://openalex.org/W1972650102","https://openalex.org/W1975705596","https://openalex.org/W1982354211","https://openalex.org/W1982906158","https://openalex.org/W1988925385","https://openalex.org/W1988985930","https://openalex.org/W1989238041","https://openalex.org/W1989880368","https://openalex.org/W1992724138","https://openalex.org/W1992926203","https://openalex.org/W1994089620","https://openalex.org/W1997649965","https://openalex.org/W1998064693","https://openalex.org/W2001894083","https://openalex.org/W2003645630","https://openalex.org/W2005103372","https://openalex.org/W2005896632","https://openalex.org/W2008007545","https://openalex.org/W2010531076","https://openalex.org/W2013507133","https://openalex.org/W2016290247","https://openalex.org/W2018121149","https://openalex.org/W2019201154","https://openalex.org/W2020254197","https://openalex.org/W2023700150","https://openalex.org/W2026708577","https://openalex.org/W2027210593","https://openalex.org/W2027855227","https://openalex.org/W2037551994","https://openalex.org/W2040513565","https://openalex.org/W2041601316","https://openalex.org/W2042885998","https://openalex.org/W2042927363","https://openalex.org/W2043536195","https://openalex.org/W2044330404","https://openalex.org/W2045657605","https://openalex.org/W2048368254","https://openalex.org/W2051764320","https://openalex.org/W2052477266","https://openalex.org/W2052800099","https://openalex.org/W2053384616","https://openalex.org/W2056056286","https://openalex.org/W2060149528","https://openalex.org/W2060155076","https://openalex.org/W2061756828","https://openalex.org/W2061834358","https://openalex.org/W2062136275","https://openalex.org/W2062627774","https://openalex.org/W2063183073","https://openalex.org/W2063932148","https://openalex.org/W2063984355","https://openalex.org/W2064764768","https://openalex.org/W2067112372","https://openalex.org/W2069372043","https://openalex.org/W2069604140","https://openalex.org/W2070062663","https://openalex.org/W2070853273","https://openalex.org/W2071921971","https://openalex.org/W2073683238","https://openalex.org/W2078268018","https://openalex.org/W2081043894","https://openalex.org/W2082010540","https://openalex.org/W2082436968","https://openalex.org/W2083803899","https://openalex.org/W2084006301","https://openalex.org/W2084196976","https://openalex.org/W2086608738","https://openalex.org/W2087241604","https://openalex.org/W2089238328","https://openalex.org/W2089805796","https://openalex.org/W2090971479","https://openalex.org/W2091187372","https://openalex.org/W2096775461","https://openalex.org/W2098662583","https://openalex.org/W2099413231","https://openalex.org/W2101513815","https://openalex.org/W2109617856","https://openalex.org/W2111932931","https://openalex.org/W2113053073","https://openalex.org/W2114718741","https://openalex.org/W2115237486","https://openalex.org/W2116815240","https://openalex.org/W2116901323","https://openalex.org/W2116983885","https://openalex.org/W2120575913","https://openalex.org/W2121349993","https://openalex.org/W2121690588","https://openalex.org/W2122621404","https://openalex.org/W2123275133","https://openalex.org/W2123401334","https://openalex.org/W2126611206","https://openalex.org/W2127394158","https://openalex.org/W2127467030","https://openalex.org/W2128626389","https://openalex.org/W2128762553","https://openalex.org/W2130195434","https://openalex.org/W2133800303","https://openalex.org/W2134230297","https://openalex.org/W2135153204","https://openalex.org/W2135350133","https://openalex.org/W2135818056","https://openalex.org/W2140964689","https://openalex.org/W2143211096","https://openalex.org/W2146311510","https://openalex.org/W2146705371","https://openalex.org/W2147631772","https://openalex.org/W2148331290","https://openalex.org/W2149802861","https://openalex.org/W2150450792","https://openalex.org/W2152224839","https://openalex.org/W2152558839","https://openalex.org/W2154869256","https://openalex.org/W2157679815","https://openalex.org/W2160351791","https://openalex.org/W2161388484","https://openalex.org/W2165003161","https://openalex.org/W2168686870","https://openalex.org/W2171845354","https://openalex.org/W2171929163","https://openalex.org/W2185862403","https://openalex.org/W2317659818","https://openalex.org/W2493581502","https://openalex.org/W2532100070","https://openalex.org/W2532491811","https://openalex.org/W2540049961","https://openalex.org/W2600160877","https://openalex.org/W3189290307","https://openalex.org/W4238618429"],"related_works":["https://openalex.org/W2157904101","https://openalex.org/W2160732864","https://openalex.org/W1838002749","https://openalex.org/W2027855227","https://openalex.org/W2062805762","https://openalex.org/W2037069265","https://openalex.org/W2159403982","https://openalex.org/W782320629","https://openalex.org/W2199106876","https://openalex.org/W2166625255"],"abstract_inverted_index":{"As":[0,218],"scaling":[1],"of":[2,8,87,102,107,111,136,143,152,155,166,172,180,235,282],"CMOS":[3],"technology":[4],"continues,":[5],"the":[6,48,73,100,134,150,164,178,192,256,291,295],"control":[7,21],"parasitic":[9],"source/drain":[10,24],"(S/D)":[11],"resistance":[12,50],"(RSD)":[13],"is":[14,46,61,77,121,130,168,174,286],"becoming":[15],"increasingly":[16],"challenging.":[17],"In":[18,81,125],"order":[19,185],"to":[20,31,63,71,132,141,176,186,206,262,265,288],"RSD,":[22],"metallic":[23],"MOSFETs":[25],"have":[26],"attracted":[27],"significant":[28],"attention,":[29],"due":[30,140],"their":[32],"low":[33,38,112,201],"resistivity,":[34],"abrupt":[35],"junction":[36],"and":[37,53,97,105,160,211,217,238,259],"temperature":[39],"processing":[40],"(\u2264700":[41],"\u00b0C).":[42],"A":[43,68,222],"key":[44],"issue":[45],"reducing":[47],"contact":[49,113,138,245],"between":[51],"metal":[52],"channel,":[54],"since":[55,117],"small":[56],"Schottky":[57,88,148,181,244],"barrier":[58,75,89,182,236,281],"height":[59,76],"(SBH)":[60],"needed":[62,122,287],"outperform":[64],"doped":[65,239],"S/D":[66,216],"devices.":[67],"promising":[69],"method":[70,129],"decrease":[72],"effective":[74],"dopant":[78,153],"segregation":[79,154],"(DS).":[80],"this":[82,126],"work":[83],"several":[84],"relevant":[85],"aspects":[86],"(SB)":[90],"contacts":[91],"are":[92,115],"investigated,":[93],"both":[94],"by":[95,232,294],"simulation":[96,223],"experiment,":[98],"with":[99,290],"goal":[101],"improving":[103],"performance":[104],"understanding":[106],"SB-MOSFET":[108,213],"technology:First,":[109],"measurements":[110],"resistivity":[114,139],"challenging,":[116],"systematic":[118],"error":[119],"correction":[120],"for":[123,199,255,267,299],"extraction.":[124],"thesis,":[127],"a":[128,233,242,250,268,280],"presented":[131],"determine":[133],"accuracy":[135],"extracted":[137],"propagation":[142],"random":[144],"measurement":[145],"error.Second,":[146],"using":[147,214],"diodes,":[149],"effect":[151],"beryllium":[156],"(Be),":[157],"bismuth":[158],"(Bi),":[159],"tellurium":[161],"(Te)":[162],"on":[163],"SBH":[165],"NiSi":[167],"demonstrated.":[169,221],"Further":[170],"study":[171,224],"Be":[173],"used":[175,261],"analyze":[177],"mechanism":[179],"lowering.Third,":[183],"in":[184,249],"fabricate":[187],"short":[188],"gate":[189,271,274],"length":[190,272],"MOSFETs,":[191],"sidewall":[193,202],"transfer":[194],"lithography":[195],"process":[196],"was":[197,225,247,260],"optimized":[198],"achieving":[200],"roughness":[203],"lines":[204],"down":[205],"15":[207],"nm.":[208],"Ultra-thin-body":[209],"(UTB)":[210],"tri-gate":[212],"PtSi":[215],"DS":[219,228],"were":[220],"conducted":[226],"showing":[227],"can":[229],"be":[230],"modeled":[231],"combination":[234],"lowering":[237],"Si":[240],"extension.Finally,":[241],"new":[243],"model":[246],"implemented":[248],"multi-subband":[251],"Monte":[252],"Carlo":[253],"simulator":[254],"first":[257],"time,":[258],"compare":[263],"doped-S/D":[264],"SB-S/D":[266],"17":[269],"nm":[270],"double":[273],"MOSFET.":[275],"The":[276],"results":[277],"show":[278],"that":[279],"\u2264":[283],"0.15":[284],"eV":[285],"comply":[289],"specifications":[292],"given":[293],"International":[296],"Technology":[297],"Roadmap":[298],"Semiconductors":[300],"(ITRS).":[301]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}