{"id":"https://openalex.org/W97350831","doi":null,"title":"Qualification de diff\u00e9rents mat\u00e9riaux silicium en vue de la r\u00e9alisation sur le m\u00eame substrat de transistors d\u00e9di\u00e9s \u00e0 diff\u00e9rentes applications","display_name":"Qualification de diff\u00e9rents mat\u00e9riaux silicium en vue de la r\u00e9alisation sur le m\u00eame substrat de transistors d\u00e9di\u00e9s \u00e0 diff\u00e9rentes applications","publication_year":2004,"publication_date":"2004-01-01","ids":{"openalex":"https://openalex.org/W97350831","mag":"97350831"},"language":"fr","primary_location":{"id":"pmh:hdl:10068/756436","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/10068/756436","pdf_url":null,"source":{"id":"https://openalex.org/S4377196900","display_name":"OpenGrey (Institut de l'Information Scientifique et Technique)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1295345811","host_organization_name":"Institut de l'Information Scientifique et Technique","host_organization_lineage":["https://openalex.org/I1295345811"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"U - Thesis"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060424752","display_name":"Amar Saboundji","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Amar Saboundji","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5060424752"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9067000150680542,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9067000150680542,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0560000017285347,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.011599999852478504,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-silicon-thin-film-transistors","display_name":"amorphous silicon thin-film transistors","score":0.9070000052452087},{"id":"https://openalex.org/keywords/microcrystalline-silicon","display_name":"microcrystalline silicon","score":0.8830000162124634},{"id":"https://openalex.org/keywords/laser-induced-crystallization","display_name":"laser-induced crystallization","score":0.8560000061988831},{"id":"https://openalex.org/keywords/nd-yag-laser","display_name":"Nd:YAG laser","score":0.9359999895095825},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.6240000128746033},{"id":"https://openalex.org/keywords/grain-size","display_name":"grain size","score":0.8149999976158142},{"id":"https://openalex.org/keywords/grain-orientation","display_name":"grain orientation","score":0.5809999704360962},{"id":"https://openalex.org/keywords/low-temperature-processing","display_name":"low-temperature processing","score":0.5820000171661377},{"id":"https://openalex.org/keywords/hot-wire-deposition","display_name":"hot-wire deposition","score":0.7179999947547913},{"id":"https://openalex.org/keywords/plasma-enhanced-chemical-vapor-deposition","display_name":"plasma-enhanced chemical vapor deposition","score":0.8489999771118164},{"id":"https://openalex.org/keywords/device-stability","display_name":"device stability","score":0.5680000185966492},{"id":"https://openalex.org/keywords/reverse-leakage-current","display_name":"reverse leakage current","score":0.4359999895095825},{"id":"https://openalex.org/keywords/single-crystal-silicon","display_name":"monocrystalline silicon","score":0.4560000002384186},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.37700000405311584},{"id":"https://openalex.org/keywords/silicon-on-silicon","display_name":"silicon-on-silicon","score":0.39100000262260437}],"concepts":[{"id":"https://openalex.org/C15708023","wikidata":"https://www.wikidata.org/wiki/Q80083","display_name":"Humanities","level":1,"score":0.5419650077819824},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47175082564353943},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34269291162490845},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.31839245557785034}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:hdl:10068/756436","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/10068/756436","pdf_url":null,"source":{"id":"https://openalex.org/S4377196900","display_name":"OpenGrey (Institut de l'Information Scientifique et Technique)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1295345811","host_organization_name":"Institut de l'Information Scientifique et Technique","host_organization_lineage":["https://openalex.org/I1295345811"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"U - Thesis"},{"id":"mag:97350831","doi":null,"is_oa":false,"landing_page_url":"http://www.theses.fr/2004REN10150","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W653745510","https://openalex.org/W20188668","https://openalex.org/W7058272544","https://openalex.org/W587568584","https://openalex.org/W362615880","https://openalex.org/W2108836192","https://openalex.org/W382476099","https://openalex.org/W7006474151","https://openalex.org/W6940488845","https://openalex.org/W597227928"],"abstract_inverted_index":{"Durant":[0],"cette":[1,137],"th\u00e8se,":[2],"nous":[3,4,182],"sommes":[5],"int\u00e9ress\u00e9s":[6,184],"\u00e0":[7,98,125,173,185,192,240,263,315],"la":[8,31,34,81,170,176,186,280,298,320],"fabrication":[9],"de":[10,15,30,33,59,64,80,83,85,102,119,121,128,136,161,179,188,201,217,242,265,297,300,311,322],"transistors":[11,38,63,75,144,155,167,189,196,231,238,261],"en":[12],"couches":[13,47,200,266],"minces":[14],"silicium":[16,202,233,243,284,289],"amorphe,":[17],"microcristallin":[18,244,285],"ou":[19],"cristallis\u00e9":[20],"par":[21,39,148,205,224,271,275],"laser.":[22,153],"La":[23,131,295],"premi\u00e8re":[24],"phase":[25],"du":[26,93,152],"travail":[27,181],"concerne":[28],"l'\u00e9tude":[29],"cristallisation":[32],"couche":[35],"active":[36],"des":[37,57,68,133,140,143,199,209,260],"un":[40],"laser":[41],"continu":[42],"Nd":[43],":":[44],"Yag.":[45],"Les":[46,62,154,195],"cristallis\u00e9es":[48],"avec":[49,198,259,308],"une":[50,77,89,112,116,126,158,213,246],"\u00e9nergie":[51],"E":[52],"=":[53],"3.64":[54],"W,":[55],"ont":[56],"grains":[58,134],"taille":[60,132],"maximale.":[61],"type":[65,310],"N":[66],"pr\u00e9sentent":[67,76,157,245],"mobilit\u00e9s":[69,253],"d'environ":[70],"630":[71],"cm2/V.s.":[72,130],"Cependant,":[73],"ces":[74],"grande":[78,214],"dispersion":[79],"mobilit\u00e9":[82,114,127,159,171,215,299],"l'ordre":[84,120],"15%":[86],"et":[87,115],"surtout":[88],"variation":[90],"al\u00e9atoire,":[91],"inacceptable,":[92],"courant":[94],"inverse":[95],"d'un":[96],"transistor":[97],"son":[99],"voisin.":[100],"L'\u00e9nergie":[101],"3.12":[103],"W":[104],"semble":[105],"\u00eatre":[106],"le":[107,283],"meilleur":[108],"compromis":[109],"possible":[110],"entre":[111],"bonne":[113,248],"homog\u00e9n\u00e9it\u00e9":[117],"acceptable,":[118],"5%.":[122],"Elle":[123],"aboutit":[124],"390":[129,162],"issus":[135],"cristallisation,":[138],"induit":[139],"performances":[141],"diff\u00e9rentes":[142],"selon":[145],"leur":[146],"orientation":[147],"rapport":[149],"au":[150,232,288],"balayage":[151],"parall\u00e8les":[156],"moyenne":[160],"cm2/V.s":[163],"alors":[164],"que":[165,228,274],"les":[166,229,237,292],"perpendiculaire":[168],"voient":[169],"chuter":[172],"240":[174],"cm2/V.s.Dans":[175],"seconde":[177],"partie":[178],"ce":[180,309],"somme":[183],"faisabilit\u00e9":[187],"stables":[190],"fabriqu\u00e9s":[191,239],"basse":[193],"temp\u00e9rature.":[194],"r\u00e9alis\u00e9s":[197,262],"amorphe":[203,290],"d\u00e9pos\u00e9":[204],"filament":[206,272],"chaud":[207,273],"donnent":[208],"r\u00e9sultats":[210,278],"int\u00e9ressants":[211],"particuli\u00e8rement":[212],"d'effet":[216],"champ":[218],"((=":[219],"1.3":[220],"cm2/V\u00b7s).":[221],"Ils":[222],"sont":[223,257],"contre":[225,236],"aussi":[226,269],"instables":[227],"habituels":[230],"amorphe.":[234],"Par":[235],"partir":[241,264],"tr\u00e8s":[247,251],"stabilit\u00e9.":[249],"De":[250],"grandes":[252],"d'\u00e9lectrons":[254],"(40":[255],"cm2/V\u00b7s)":[256],"obtenues":[258],"micrcristallines":[267],"d\u00e9pos\u00e9es":[268],"bien":[270],"PECVD.":[276],"Ces":[277],"confirment":[279],"possibilit\u00e9":[281],"d'utiliser":[282],"comme":[286],"alternative":[287],"dans":[291],"\u00e9crans":[293],"plats":[294],"valeur":[296],"trous":[301],"obtenue":[302],"1.15":[303],"cm2/V\u00b7s,":[304],"jamais":[305],"atteinte":[306],"auparavant":[307],"mat\u00e9riau,":[312],"est":[313],"quant":[314],"elle":[316],"suffisante":[317],"pour":[318],"envisager":[319],"r\u00e9alisation":[321],"circuits":[323],"CMOS.":[324]},"counts_by_year":[],"updated_date":"2025-11-06T04:12:42.849631","created_date":"2016-06-24T00:00:00"}