{"id":"https://openalex.org/W970421034","doi":null,"title":"Electrical characteristics of amorphous boron arsenide films","display_name":"Electrical characteristics of amorphous boron arsenide films","publication_year":1970,"publication_date":"1970-01-01","ids":{"openalex":"https://openalex.org/W970421034","mag":"970421034"},"language":"en","primary_location":{"id":"mag:970421034","doi":null,"is_oa":false,"landing_page_url":"https://ntrs.nasa.gov/search.jsp?R=19700056468","pdf_url":null,"source":{"id":"https://openalex.org/S4306402118","display_name":"NASA Technical Reports Server (NASA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210124779","host_organization_name":"National Aeronautics and Space Administration","host_organization_lineage":["https://openalex.org/I4210124779"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109136264","display_name":"T. L. Chu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. L. Chu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5041593549","display_name":"A. E. Hyslop","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. E. Hyslop","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11341","display_name":"Boron and Carbon Nanomaterials Research","score":0.3594000041484833,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11341","display_name":"Boron and Carbon Nanomaterials Research","score":0.3594000041484833,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.302700012922287,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.11140000075101852,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.9779999852180481},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.8999999761581421},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.7879999876022339},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.8080000281333923},{"id":"https://openalex.org/keywords/semiconductor-thin-films","display_name":"semiconductor thin films","score":0.4659999907016754}],"concepts":[{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.6064267158508301},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5249433517456055},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.4475637972354889},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4168553054332733},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.33365312218666077},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.24247461557388306},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.18355974555015564},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15558907389640808},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.15366658568382263},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.061485469341278076}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:970421034","doi":null,"is_oa":false,"landing_page_url":"https://ntrs.nasa.gov/search.jsp?R=19700056468","pdf_url":null,"source":{"id":"https://openalex.org/S4306402118","display_name":"NASA Technical Reports Server (NASA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210124779","host_organization_name":"National Aeronautics and Space Administration","host_organization_lineage":["https://openalex.org/I4210124779"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2584501503","https://openalex.org/W2096360285","https://openalex.org/W4248524726","https://openalex.org/W2046030132","https://openalex.org/W1964865173","https://openalex.org/W4249557654","https://openalex.org/W2789341596","https://openalex.org/W3022487901","https://openalex.org/W2612806462","https://openalex.org/W3118717660"],"abstract_inverted_index":{"Amorphous":[0],"boron":[1],"arsenide":[2],"films":[3],"deposited":[4],"on":[5],"Si":[6],"substrates,":[7],"measuring":[8],"current":[9],"voltage":[10],"characteristics":[11]},"counts_by_year":[],"updated_date":"2026-11-01T11:40:01.658920","created_date":"2016-06-24T00:00:00"}