{"id":"https://openalex.org/W90274644","doi":null,"title":"Ultra-Low Noise InP HEMTs for Cryogenic Amplification","display_name":"Ultra-Low Noise InP HEMTs for Cryogenic Amplification","publication_year":2012,"publication_date":"2012-01-01","ids":{"openalex":"https://openalex.org/W90274644","mag":"90274644"},"language":"en","primary_location":{"id":"pmh:oai:publications.lib.chalmers.se:155819","doi":null,"is_oa":true,"landing_page_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","pdf_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","source":{"id":"https://openalex.org/S4377196470","display_name":"Chalmers Publication Library (Chalmers University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I66862912","host_organization_name":"Chalmers University of Technology","host_organization_lineage":["https://openalex.org/I66862912"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text.Thesis.Licentiate"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083142158","display_name":"Joel Schleeh","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Joel Schleeh","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5083142158"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9243000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9243000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.03999999910593033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00989999994635582,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inp-hemt","display_name":"InP HEMT","score":0.8840000033378601},{"id":"https://openalex.org/keywords/cryogenic-low-noise-amplifier","display_name":"cryogenic low-noise amplifier","score":0.8479999899864197},{"id":"https://openalex.org/keywords/noise-temperature","display_name":"noise temperature","score":0.746999979019165},{"id":"https://openalex.org/keywords/ingaas-inalas-heterostructures","display_name":"InGaAs/InAlAs heterostructures","score":0.8320000171661377},{"id":"https://openalex.org/keywords/al2o3-atomic-layer-deposition","display_name":"Al2O3 atomic layer deposition","score":0.8149999976158142},{"id":"https://openalex.org/keywords/surface-passivation","display_name":"surface passivation","score":0.8130000233650208},{"id":"https://openalex.org/keywords/kink-effect","display_name":"kink effect","score":0.7519999742507935},{"id":"https://openalex.org/keywords/surface-traps","display_name":"surface traps","score":0.574999988079071},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuits","display_name":"monolithic microwave integrated circuits","score":0.8679999709129333},{"id":"https://openalex.org/keywords/low-power-consumption","display_name":"low power consumption","score":0.7020000219345093},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.6949999928474426},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.9350000023841858},{"id":"https://openalex.org/keywords/s-parameters","display_name":"S-parameters","score":0.6200000047683716}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.816813588142395},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7345003485679626},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6814939379692078},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6096662282943726},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.5781142115592957},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5565534830093384},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4971771538257599},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.46977943181991577},{"id":"https://openalex.org/C52660251","wikidata":"https://www.wikidata.org/wiki/Q17083145","display_name":"Noise temperature","level":3,"score":0.4613378942012787},{"id":"https://openalex.org/C179725390","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenics","level":2,"score":0.4152158498764038},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3702734410762787},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.21531915664672852},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16863194108009338},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14046365022659302},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.118265300989151},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10361728072166443},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08817920088768005},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.07595619559288025},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"pmh:oai:publications.lib.chalmers.se:155819","doi":null,"is_oa":true,"landing_page_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","pdf_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","source":{"id":"https://openalex.org/S4377196470","display_name":"Chalmers Publication Library (Chalmers University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I66862912","host_organization_name":"Chalmers University of Technology","host_organization_lineage":["https://openalex.org/I66862912"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text.Thesis.Licentiate"},{"id":"pmh:oai:research.chalmers.se:155819","doi":null,"is_oa":true,"landing_page_url":"https://research.chalmers.se/en/publication/155819","pdf_url":"https://research.chalmers.se/en/publication/155819","source":{"id":"https://openalex.org/S4306402469","display_name":"Chalmers Research (Chalmers University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I66862912","host_organization_name":"Chalmers University of Technology","host_organization_lineage":["https://openalex.org/I66862912"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":null},{"id":"mag:90274644","doi":null,"is_oa":false,"landing_page_url":"https://publications.lib.chalmers.se/records/fulltext/155819.pdf","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:publications.lib.chalmers.se:155819","doi":null,"is_oa":true,"landing_page_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","pdf_url":"http://publications.lib.chalmers.se/publication/155819-ultra-low-noise-inp-hemts-for-cryogenic-amplification","source":{"id":"https://openalex.org/S4377196470","display_name":"Chalmers Publication Library (Chalmers University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I66862912","host_organization_name":"Chalmers University of Technology","host_organization_lineage":["https://openalex.org/I66862912"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Text.Thesis.Licentiate"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321030","display_name":"VINNOVA","ror":"https://ror.org/01kd5m353"},{"id":"https://openalex.org/F4320321523","display_name":"Chalmers Tekniska H\u00f6gskola","ror":"https://ror.org/040wg7k59"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W90274644.pdf","grobid_xml":"https://content.openalex.org/works/W90274644.grobid-xml"},"referenced_works_count":23,"referenced_works":["https://openalex.org/W17729805","https://openalex.org/W575296461","https://openalex.org/W1669917242","https://openalex.org/W1966423045","https://openalex.org/W2026951322","https://openalex.org/W2031598057","https://openalex.org/W2050470718","https://openalex.org/W2066560481","https://openalex.org/W2084805647","https://openalex.org/W2097963789","https://openalex.org/W2098992154","https://openalex.org/W2111172772","https://openalex.org/W2121470932","https://openalex.org/W2131822391","https://openalex.org/W2137822212","https://openalex.org/W2137878337","https://openalex.org/W2146242275","https://openalex.org/W2149067398","https://openalex.org/W2157560707","https://openalex.org/W2158035835","https://openalex.org/W2160781712","https://openalex.org/W2547729619","https://openalex.org/W3161150089"],"related_works":["https://openalex.org/W75781809","https://openalex.org/W2137878337","https://openalex.org/W3100516957","https://openalex.org/W3033509974","https://openalex.org/W1892094046","https://openalex.org/W2788176888","https://openalex.org/W3137991886","https://openalex.org/W2080436933","https://openalex.org/W2033155639","https://openalex.org/W1993483384"],"abstract_inverted_index":{"InGaAs/InAlAs/InP":[0],"High":[1],"Electron":[2],"Mobility":[3],"Transistors":[4],"(InP":[5],"HEMTs),":[6],"are":[7],"today":[8],"the":[9,23,29,34,72,117,170,176,191,219,234,239,272,304,310,335,340,364],"best":[10],"devices":[11,106,138],"to":[12,94,244,285,300],"design":[13],"cryogenic":[14,47,131,231,321],"low":[15,51,75,147,256,277,306],"noise":[16,24,130,148,152,188,201,216,236,263,278,307,337],"amplifiers.":[17],"However,":[18],"reported":[19],"progress":[20],"in":[21,28,116,141,238,315],"reducing":[22],"has":[25,222],"been":[26,223],"slow":[27],"last":[30],"decade.In":[31],"this":[32,316],"thesis":[33],"fabrication,":[35],"optimization":[36],"and":[37,64,162,215,267,290,330,363],"characterization":[38],"of":[39,81,154,169,182,190,218,271,309,350],"130":[40],"nm":[41],"gate":[42,61],"length":[43],"InP":[44,88,102,125,192,208,220,240,273,311],"HEMTs":[45,89,221],"for":[46,71,87,128,207,261],"amplification":[48,132],"at":[49,74,122,159,197,225,230,255,275,280,353],"very":[50],"power":[52,365],"dissipation":[53,366],"is":[54,242,258],"presented.":[55],"By":[56],"investigating":[57],"device":[58,253],"passivation,":[59],"metallization,":[60],"recess":[62],"etch,":[63],"circuit":[65,325],"integration,":[66],"low-noise":[67],"performance":[68,217,254,308],"was":[69,90,133,157,172,194,283,328,343,358,367],"optimized":[70],"HEMT":[73,126,193,209,241,274,312],"temperature":[76,153,189,202,299,338],"around":[77],"10":[78,163],"K.The":[79],"effect":[80],"Al2O3":[82],"atomic":[83],"layer":[84],"deposition":[85,100],"(ALD)":[86],"investigated.":[91],"In":[92],"comparison":[93],"standard":[95],"plasma":[96],"enhanced":[97],"chemical":[98],"vapor":[99],"passivated":[101,105],"HEMTs,":[103],"ALD":[104],"demonstrated":[107],"much":[108],"less":[109],"kink":[110],"effects":[111],"associated":[112],"with":[113,287,347],"surface":[114],"traps":[115],"output":[118],"drain":[119,249],"current":[120,250],"characteristics":[121],"room":[123,226,298],"temperature.An":[124],"designed":[127,329],"ultra-low":[129,262],"fabricated.":[134,331],"When":[135],"4x50":[136],"um":[137],"were":[139],"integrated":[140,324],"a":[142,151,204,259,318,348],"4-8":[143],"GHz":[144,161,320],"3-stage":[145],"hybrid":[146],"amplifier":[149,171],"(LNA),":[150],"1.2":[155],"K":[156,164,196,282,346,352],"measured":[158,336],"5.2":[160],"operating":[165],"temperature.":[166],"The":[167,185,356],"gain":[168,357],"44":[173],"dB":[174,362],"across":[175],"band,":[177],"consuming":[178],"only":[179],"4.2":[180],"mW":[181],"DC":[183],"power.":[184],"extracted":[186],"minimum":[187,349],"1":[195],"6":[198],"GHz.":[199,355],"This":[200],"represents":[203],"new":[205],"state-of-the-art":[206],"technology.The":[210],"relation":[211],"between":[212],"DC,":[213],"S-parameter,":[214],"investigated":[224],"as":[227,229],"well":[228],"temperatures.":[232],"As":[233],"main":[235],"contribution":[237],"observed":[243,284],"be":[245],"linearly":[246],"dependent":[247],"on":[248],"Id,":[251],"excellent":[252,305],"Id":[257],"prerequisite":[260],"operation.":[264],"Transconductance":[265],"gm":[266],"cut-off":[268],"frequency":[269],"fT":[270],"optimum":[276],"bias":[279],"4":[281,301],"increase":[286],"100":[288],"%":[289],"60":[291],"%,":[292],"respectively,":[293],"when":[294],"cooled":[295],"down":[296],"from":[297],"K.To":[302],"demonstrate":[303],"technology":[313],"developed":[314],"work,":[317],"0.5-13":[319],"monolithic":[322],"microwave":[323],"(MMIC)":[326],"LNA":[327],"At":[332],"15":[333],"K,":[334],"within":[339],"entire":[341],"band":[342],"below":[344],"7":[345,354],"3":[351],"more":[359],"than":[360],"38":[361],"16.5":[368],"mW.":[369]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-08-31T07:19:18.363097","created_date":"2016-06-24T00:00:00"}