{"id":"https://openalex.org/W853585153","doi":null,"title":"Croissance basse temp\u00e9rature de films minces de carbure de silicium nanocristallin : propri\u00e9t\u00e9s et performances d'h\u00e9t\u00e9rojonctions SiC/Si","display_name":"Croissance basse temp\u00e9rature de films minces de carbure de silicium nanocristallin : propri\u00e9t\u00e9s et performances d'h\u00e9t\u00e9rojonctions SiC/Si","publication_year":2005,"publication_date":"2005-01-01","ids":{"openalex":"https://openalex.org/W853585153","mag":"853585153"},"language":"fr","primary_location":{"id":"pmh:hdl:10068/770825","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/10068/770825","pdf_url":null,"source":{"id":"https://openalex.org/S4377196900","display_name":"OpenGrey (Institut de l'Information Scientifique et Technique)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1295345811","host_organization_name":"Institut de l'Information Scientifique et Technique","host_organization_lineage":["https://openalex.org/I1295345811"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"U - Thesis"},"volume":null,"type":"dissertation","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090379071","display_name":"H. Colder","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"H. Colder","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5090379071"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.003100000089034438,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0017999999690800905,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanocrystalline-silicon-carbide","display_name":"nanocrystalline silicon carbide","score":0.9279999732971191},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.7200000286102295},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.8190000057220459},{"id":"https://openalex.org/keywords/hydrogen-plasma","display_name":"hydrogen plasma","score":0.6669999957084656},{"id":"https://openalex.org/keywords/crystallinity","display_name":"crystallinity","score":0.6800000071525574},{"id":"https://openalex.org/keywords/111-preferred-orientation","display_name":"(111) preferred orientation","score":0.8679999709129333},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.7020000219345093},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.9739999771118164},{"id":"https://openalex.org/keywords/rectifying-behavior","display_name":"rectifying behavior","score":0.7390000224113464},{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.6930000185966492},{"id":"https://openalex.org/keywords/interface-defects","display_name":"interface defects","score":0.7929999828338623},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.5490000247955322},{"id":"https://openalex.org/keywords/hydrogen-content","display_name":"hydrogen content","score":0.40299999713897705},{"id":"https://openalex.org/keywords/stoichiometry","display_name":"stoichiometry","score":0.8610000014305115}],"concepts":[{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.5456982851028442},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4733845293521881}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:hdl:10068/770825","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/10068/770825","pdf_url":null,"source":{"id":"https://openalex.org/S4377196900","display_name":"OpenGrey (Institut de l'Information Scientifique et Technique)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1295345811","host_organization_name":"Institut de l'Information Scientifique et Technique","host_organization_lineage":["https://openalex.org/I1295345811"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"U - Thesis"},{"id":"mag:853585153","doi":null,"is_oa":false,"landing_page_url":"http://www.theses.fr/2005CAEN2015","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W8864714","https://openalex.org/W755964625","https://openalex.org/W2026836726","https://openalex.org/W1980693713","https://openalex.org/W7057148389","https://openalex.org/W2621264489","https://openalex.org/W7014742663","https://openalex.org/W2090179486","https://openalex.org/W50064201","https://openalex.org/W2007814448"],"abstract_inverted_index":{"Des":[0,63,167],"films":[1,66,178],"minces":[2],"de":[3,21,24,42,60,72,86,93,98,104,106,117,137,140,160,179,221,223,248],"SiC":[4,118,165,180],"nanocristallin":[5],"ont":[6,119,172],"ete":[7,173],"obtenus":[8],"a":[9,32,38,175,182,185,208,238,243],"des":[10,55,90,177,228],"temperatures":[11],"TD":[12,43,80,143,194,201],"comprises":[13],"entre":[14],"200\u00b0C":[15],"et":[16,23,50,53,103,128,144,153,184,197],"600\u00b0C":[17],"par":[18,57,149,154,218,227,250],"la":[19,45,87,99,107,125,133,244],"co-pulverisation":[20],"silicium":[22],"carbone":[25],"sous":[26],"un":[27],"plasma":[28],"reactif":[29],"d'hydrogene":[30],"melange":[31],"20%":[33],"d'argon.":[34],"Cette":[35],"serie":[36],"d'echantillon":[37],"permis":[39],"d'examiner":[40],"l'influence":[41],"sur":[44],"structure,":[46],"composition,":[47],"morphologie,":[48],"nature":[49],"proprietes":[51],"optiques":[52],"electriques":[54],"couches,":[56],"une":[58,68,121,129],"panoplie":[59],"techniques":[61],"sophistiquees.":[62],"300\u00b0C,":[64,196,209],"les":[65,112,115,145,205],"montrent":[67],"fraction":[69],"cristalline":[70],"fC":[71,94],"30%":[73],"qui":[74],"s'est":[75,135],"amelioree":[76,136],"jusqu'a":[77],"80%":[78],"pour":[79,163,193,200],"=":[81,195,202],"600\u00b0C,":[82],"sans":[83],"changement":[84],"notable":[85],"taille":[88],"moyenne":[89],"nanograins.":[91],"L'augmentation":[92],"s'accompagne":[95],"d'une":[96,215],"decroissance":[97],"teneur":[100],"en":[101,151],"hydrogene":[102],"l'atteinte":[105],"stoechiometrie":[108],"(Si/C~1).":[109],"Pour":[110],"toutes":[111],"valeurs":[113],"TD,":[114],"cristallites":[116],"montre":[120],"forme":[122],"allongee":[123],"selon":[124],"direction":[126],"(111)":[127],"orientation":[130],"preferentielle.":[131],"Enfin,":[132],"conductivite":[134],"plusieurs":[138],"ordres":[139],"grandeur":[141],"avec":[142],"grandeurs":[146],"optiques,":[147],"determinees":[148],"spectrophotometrie":[150],"transmission":[152],"l'ellipsometrie":[155],"spectroscopique,":[156],"se":[157],"sont":[158],"rapprochees":[159],"leurs":[161],"correspondants":[162],"le":[164,210,219],"cristallin.":[166],"heterojonctions":[168],"du":[169,246],"type":[170],"nc-SiC:H/c-Si":[171],"realisees":[174],"partir":[176],"deposes":[181],"300\u00b0C":[183],"600\u00b0C.":[186,203],"Le":[187],"comportement":[188],"redresseur":[189],"est":[190,213],"tres":[191],"satisfaisant":[192],"s'ameliore":[198],"nettement":[199],"Dans":[204],"diodes":[206],"obtenues":[207],"courant":[211],"direct":[212],"regi":[214],"maniere":[216],"preponderante":[217],"processus":[220],"generation-recombinaison":[222],"paires":[224],"electron-trou":[225],"induits":[226],"defauts":[229,233],"d'interface":[230],"film/substrat.":[231],"Ces":[232],"semblent":[234],"guerir":[235],"apres":[236],"recuit":[237],"380\u00b0C":[239],"pendant":[240],"6h,":[241],"conduisant":[242],"predominance":[245],"mecanisme":[247],"conduction":[249],"diffusion.":[251]},"counts_by_year":[{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T04:12:42.849631","created_date":"2016-06-24T00:00:00"}