{"id":"https://openalex.org/W7225613792","doi":"https://doi.org/10.1021/acsanm.6c03858","title":"Photovoltaic Modulation of MoS2 Transistors via Interfacial Photoelectron Injection in Pn-Si/MoS2/h-BN Heterostructures","display_name":"Photovoltaic Modulation of MoS2 Transistors via Interfacial Photoelectron Injection in Pn-Si/MoS2/h-BN Heterostructures","publication_year":2026,"publication_date":"2026-11-09","ids":{"openalex":"https://openalex.org/W7225613792","doi":"https://doi.org/10.1021/acsanm.6c03858"},"language":"en","primary_location":{"id":"doi:10.1021/acsanm.6c03858","doi":"https://doi.org/10.1021/acsanm.6c03858","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsanm.6c03858","pdf_url":null,"source":{"id":"https://openalex.org/S4210191493","display_name":"ACS Applied Nano Materials","issn_l":"2574-0970","issn":["2574-0970"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Nano Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5135424346","display_name":"Ning Fang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Fang","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5161346130","display_name":"Lixin Zhao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lixin Zhao","raw_affiliation_strings":["Southeast University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University , , ,","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5124339579","display_name":"Nan Sun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Nan Sun","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100609725","display_name":"Haoran Wang","orcid":"https://orcid.org/0000-0002-8605-0329","observed_orcids":["https://orcid.org/0000-0002-8605-0329"]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haoran Wang","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101452450","display_name":"Qian Tao Cao","orcid":"https://orcid.org/0000-0002-4306-2821","observed_orcids":["https://orcid.org/0000-0002-4306-2821"]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qian Cao","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033614378","display_name":"Jican Hao","orcid":"https://orcid.org/0000-0001-9424-701X","observed_orcids":["https://orcid.org/0000-0001-9424-701X"]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jican Hao","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":"https://orcid.org/0000-0001-9424-701X","affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100436140","display_name":"Lei Wang","orcid":"https://orcid.org/0000-0003-3509-4011","observed_orcids":["https://orcid.org/0000-0003-3509-4011","https://orcid.org/0000-0002-1919-9107"]},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Lei Wang","raw_affiliation_strings":["Southeast University , , ,"],"raw_orcid":"https://orcid.org/0000-0003-3509-4011","affiliations":[{"raw_affiliation_string":"Southeast University , , ,","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100328871","display_name":"Shuai Zhang","orcid":"https://orcid.org/0000-0002-3033-9238","observed_orcids":["https://orcid.org/0000-0002-3033-9238","https://orcid.org/0000-0001-6718-7867","https://orcid.org/0009-0008-5232-4054"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Han Zhang","raw_affiliation_strings":["Changzhou University , , , ,","Chinese Academy of Sciences , , , ,"],"raw_orcid":"https://orcid.org/0000-0001-6718-7867","affiliations":[{"raw_affiliation_string":"Changzhou University , , , ,","institution_ids":["https://openalex.org/I4210153482"]},{"raw_affiliation_string":"Chinese Academy of Sciences , , , ,","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5159576684","display_name":"Ziyao Zhou","orcid":"https://orcid.org/0009-0002-9604-7403","observed_orcids":["https://orcid.org/0009-0002-9604-7403"]},"institutions":[{"id":"https://openalex.org/I4210153482","display_name":"Changzhou University","ror":"https://ror.org/04ymgwq66","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210153482"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Ziyao Zhou","raw_affiliation_strings":["Changzhou University , , ,"],"raw_orcid":"https://orcid.org/0009-0002-9604-7403","affiliations":[{"raw_affiliation_string":"Changzhou University , , ,","institution_ids":["https://openalex.org/I4210153482"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100328871","https://openalex.org/A5100436140","https://openalex.org/A5159576684"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210153482","https://openalex.org/I76569877"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos2-transistors","display_name":"MoS2 transistors","score":0.8849999904632568},{"id":"https://openalex.org/keywords/n-type-doping","display_name":"n-type doping","score":0.48899999260902405},{"id":"https://openalex.org/keywords/carrier-transport","display_name":"carrier transport","score":0.5640000104904175},{"id":"https://openalex.org/keywords/optical-switching","display_name":"optical switching","score":0.4569999873638153},{"id":"https://openalex.org/keywords/threshold-voltage-stability","display_name":"threshold voltage stability","score":0.7210000157356262}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8223999738693237},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.8112000226974487},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7700999975204468},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5698999762535095},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.5504000186920166},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.5282999873161316},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5067999958992004},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4607999920845032},{"id":"https://openalex.org/C41291067","wikidata":"https://www.wikidata.org/wiki/Q1897785","display_name":"Photovoltaic system","level":2,"score":0.43720000982284546},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4302999973297119},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.3862999975681305},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.3765000104904175},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.36160001158714294},{"id":"https://openalex.org/C67377204","wikidata":"https://www.wikidata.org/wiki/Q2075856","display_name":"Photovoltaic effect","level":3,"score":0.3472999930381775},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.3400999903678894},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.3353999853134155},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.3314000070095062},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.329800009727478},{"id":"https://openalex.org/C104232198","wikidata":"https://www.wikidata.org/wiki/Q865807","display_name":"Charge carrier","level":2,"score":0.3091000020503998},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.29440000653266907},{"id":"https://openalex.org/C180651308","wikidata":"https://www.wikidata.org/wiki/Q1265973","display_name":"Dark current","level":3,"score":0.2903999984264374},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.2653999924659729}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1021/acsanm.6c03858","doi":"https://doi.org/10.1021/acsanm.6c03858","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsanm.6c03858","pdf_url":null,"source":{"id":"https://openalex.org/S4210191493","display_name":"ACS Applied Nano Materials","issn_l":"2574-0970","issn":["2574-0970"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Nano Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321543","display_name":"China Postdoctoral Science Foundation","ror":"https://ror.org/0426zh255"},{"id":"https://openalex.org/F4320324176","display_name":"Changzhou Science and Technology Bureau","ror":"https://ror.org/00wgk5w17"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":52,"referenced_works":["https://openalex.org/W1981368803","https://openalex.org/W2007395042","https://openalex.org/W2020944186","https://openalex.org/W2021994802","https://openalex.org/W2066083252","https://openalex.org/W2083222334","https://openalex.org/W2115786064","https://openalex.org/W2514058591","https://openalex.org/W2773084460","https://openalex.org/W2789137959","https://openalex.org/W2911791650","https://openalex.org/W2937500539","https://openalex.org/W2976040707","https://openalex.org/W2982015396","https://openalex.org/W3011747191","https://openalex.org/W3038025793","https://openalex.org/W3087915915","https://openalex.org/W3167157037","https://openalex.org/W4206782585","https://openalex.org/W4221136070","https://openalex.org/W4225158891","https://openalex.org/W4283513832","https://openalex.org/W4294237548","https://openalex.org/W4295837495","https://openalex.org/W4361009119","https://openalex.org/W4386910583","https://openalex.org/W4387141013","https://openalex.org/W4389856143","https://openalex.org/W4392865093","https://openalex.org/W4394750107","https://openalex.org/W4395071425","https://openalex.org/W4396887677","https://openalex.org/W4396929115","https://openalex.org/W4398146661","https://openalex.org/W4402437647","https://openalex.org/W4404566423","https://openalex.org/W4405199706","https://openalex.org/W4405880089","https://openalex.org/W4405893759","https://openalex.org/W4406000651","https://openalex.org/W4406402532","https://openalex.org/W4408628333","https://openalex.org/W4409148626","https://openalex.org/W4409440811","https://openalex.org/W4413419011","https://openalex.org/W4416913144","https://openalex.org/W7117739949","https://openalex.org/W7125484985","https://openalex.org/W7125981928","https://openalex.org/W7136913710","https://openalex.org/W7138979441","https://openalex.org/W7167077221"],"related_works":["https://openalex.org/W2805204074","https://openalex.org/W1974974080","https://openalex.org/W2028396569","https://openalex.org/W4408416253","https://openalex.org/W3083173230","https://openalex.org/W4225761076","https://openalex.org/W2977363126","https://openalex.org/W2595608834","https://openalex.org/W2748122108","https://openalex.org/W3114212807"],"abstract_inverted_index":{"Abstract":[0],"Two-dimensional":[1],"(2D)":[2],"semiconductor":[3],"transistors":[4],"offer":[5],"attractive":[6],"optoelectronic":[7],"functionality":[8],"beyond":[9],"the":[10,57,65,101,108,141,148,171],"scaling":[11],"limits":[12],"of":[13,97,144,150,170],"conventional":[14,18],"silicon":[15],"technology.":[16],"However,":[17],"2D":[19],"phototransistors":[20],"often":[21],"suffer":[22],"from":[23,73,173],"limited":[24],"photoresponse":[25],"performance,":[26],"high":[27],"energy":[28],"consumption,":[29],"and":[30,60,124,153,166,177],"unstable":[31],"threshold":[32],"voltage.":[33],"To":[34],"overcome":[35],"these":[36],"challenges,":[37],"we":[38],"demonstrate":[39,159],"a":[40,47,88,93,117],"photovoltaic":[41,178],"modulated":[42],"field-effect":[43],"transistor":[44],"based":[45],"on":[46,86],"pn-Si/MoS2/h-BN":[48],"heterostructure.":[49],"Under":[50],"visible":[51],"illumination,":[52],"photogenerated":[53],"electrons":[54],"accumulate":[55],"near":[56],"pn-Si/MoS2":[58],"interface":[59],"are":[61],"vertically":[62],"injected":[63],"into":[64],"adjacent":[66],"MoS2":[67,145,164],"conduction":[68],"channel.":[69],"A":[70],"current":[71,95,105],"change":[72],"approximately":[74,98],"3.8":[75],"\u03bcA":[76,79],"to":[77,92],"11.2":[78],"is":[80,84],"observed":[81],"when":[82],"illumination":[83],"switched":[85],"during":[87,107],"gate-voltage":[89],"sweep,":[90],"corresponding":[91],"switching-event":[94],"ratio":[96],"2.95.":[99],"Concurrently,":[100],"device":[102],"exhibits":[103],"reversible":[104],"modulation":[106,161],"recorded":[109],"optical":[110,160],"ON/OFF":[111],"cycles.":[112],"Wavelength-dependent":[113],"measurements":[114],"further":[115,135,168],"elucidate":[116],"critical":[118],"competition":[119],"between":[120],"injection-driven":[121],"carrier":[122,155,175],"enhancement":[123],"high-field":[125],"suppression":[126],"effects.":[127],"First-principles":[128],"calculations":[129],"using":[130],"monolayer":[131],"MoS2/h-BN":[132],"heterostructure":[133],"models":[134],"show":[136],"that":[137],"electron":[138],"doping":[139],"increases":[140],"electrical":[142],"conductivity":[143],"by":[146],"increasing":[147],"occupation":[149],"conduction-band":[151],"states":[152],"improving":[154],"transport.":[156],"These":[157],"results":[158],"in":[162],"Si-supported":[163],"devices":[165],"motivate":[167],"investigation":[169],"contributions":[172],"interfacial":[174],"transfer":[176],"gating.":[179]},"counts_by_year":[],"updated_date":"2026-11-11T12:16:26.678958","created_date":"2026-11-10T00:00:00"}